U.v. absorbers in sun cosmetics 1978

A comprehensive survey has been carried out to establish which sun-screen agents are used by the cosmetics industry in Holland. During 1978, some 200 cosmetic sun preparations, composed of forty-eight brands, were purchased and analysed to determine which u.v. absorbing compounds were present. Most of those found were identified and quantified by means of thin layer chromatography and u.v. spectrometry. A basis for this work was the proposal by the European Cosmetic Manufacturers to produce a positive list of u.v. absorbers. It was felt that by carrying out this survey, some priority could be placed on the most popular materials used by the industry. When comparing those found with the European list of u.v. absorbers 1978, only twenty-four of the sixty compounds listed could be identified in the samples. The six most frequently used were found to be:

• 1 2-Ethylhexyl.p.methoxycinnamate (nineteen brands).
• 2 2-Phenylbenzimidazole.5-sulphonic acid (eleven brands).
• 3 2-Ethoxyethyl.p.methoxycinnamate (nine brands).
• 4 3 (4′Methylbenzylidene)D,D,L-camphor (seven brands).
• 5 3-Benzylidene.D,L-camphor (six brands).
• 6 2-Hydroxy.4-methoxy.benzophenone (six brands).

Usage levels varied from 0.4% up to 6.8%. Twenty-two products used a combination of two, and four products a combination of three sun-screens. Les filtres u.v. dans les produits anti-solaires 1978     

Material surface layer damage estimation for cyclic loading conditions using the nanoindenting and nanoscratching techniques

The nanoindenting method is based on the automatic measurement and recording of the force acting on the indenter (10⁻²-5 N) and the depth of indentation (10⁻²-200 μm). The scratch hardness or nanoscratching method is based on the continuous recording of resistance forces to movement of the indenter impressed into the surface. __________ Translated from Problemy Prochnosti, No. 4, pp. 132–139, July–August, 2006.     

Effect of nitrocarburizing on sulphide layer during nitrocarburizing-sulphurating treatment

Compared with the single sulphurating treatment, the duplex treatment of nitrocarburizing-sulphurating can more effectively improve the properties of steel such as friction-reducing, wear resistance and anti-scuffing. Under the same processing parameters, the sulphide layers were fabricated on the surface of CrMoCu alloy cast iron by single ion-sulphurating treatment and nitrocarburizing-sulphurating duplex treatment, respectively. Through the analysis of the sulphide, the effect of the nitrocarburizing on the fabrication of the sulphide layer was investigated. And the result shows that the fabrication of sulphide layer is promoted by the nitrocarburizing treatment.     

江苏电网EMS中网络通信的应用

首先叙述了网络通信方式相比于传统远动方式的巨大优势；然后从江苏电网的实际情况出发，对网络通信涉及的各个层次进行了分析，其中重点探讨了与能量管理系统(EMS)联系最为紧密的应用层协议的选择；最后，以江苏省目前的网络通信建设状况为依据，进一步验证了网络通信方式的优越性，并在肯定现有成绩的基础上，提出了对今后发展的建议和对未来的展望。     

多层理论在圆筒型直线感应电动机计算上的应用

本文从麦克斯韦方程出发，在圆柱坐标系下建立了圆筒型直线电机的多层理论分析模用该模型对一台样机进行实例计算，并与磁阻抗法和实验值进行了比较，计算结果表明该方法的正确性和有效性。     

一种新的动态二值化算法

本文提出了一种新的动态二值化算法，以实现从灰度点阵图象中提取其对象。通过分析象素和其所在的局部区和灰度值等数字特征，可以判断局部区的内是否存在对象，阈值和判断条件对应。     

改善烧结料层透气性途径的探讨

介绍韶关冶炼厂烧结机烧结料层透气性的情况以及改造途径．     

Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition

Aluminum nitride (AlN) thin films were deposited by atomic layer deposition from aluminum chloride (AlCl₃) and an ammonia/hydrogen plasma. The most important role of the ammonia/hydrogen plasma was to act as a reducing agent to extract Cl from AlCl₃, and to form AlN subsequently. The growth rate was saturated at ∼0.042 nm/cycle, and the thickness was proportional to the number of reaction cycles. Repeating this reaction cycle led to precisely controlled growth. The film properties were analyzed using Auger electron spectroscopy, X-ray photoelectron spectroscopy, Rutherford backscattering spectroscopy and time-of-flight elastic recoil detection analysis. The concentration of chlorine and hydrogen impurities was 0.23 and 2.01 at.%, respectively. AlN films showed good anti-oxidation properties when O₂ was annealed at 650 °C for 30 min.