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141.
民族特色词语的英汉互译 总被引:1,自引:0,他引:1
彭术根 《湖南冶金职业技术学院学报》2004,(4)
语言在其发展演变过程中,逐步具有了鲜明的民族文化色彩。阐述了民族特色词语的可译性,并提出了具体的翻译方法。 相似文献
142.
本文叙述了我国管道业面临的市场机遇和受到天然气价格等因素的制约以及进口钢管的挑战。建议中国管道业应适当发展ERW610机组和UOE机组的高质量产品;在钢板上宜以X70级为主,设备潜力可向X80级为目标而努力。 相似文献
143.
Ti-45Al-10Nb合金的高温氧化行为 总被引:4,自引:0,他引:4
研究了Ti—45A1—10Nb(原子分数,%)合金在800-960℃在氧气和空气中的氧化行为.结果表明,该合金具有较好的高温抗氧化性能,其氧化增重速率与铁基耐热不锈钢相似或略优.与Ti—50A1合金相反,Ti-45A1-10Nb合金在空气中的氧化增重速率明显低于在纯氧中的氧化增重速率.X射线衍射与能谱分析表明,Ti-45Al一10Nb合金在氧气中的氧化产物主要有TiO2和Al2O3,但在空气中的氧化产物中有TiN相.这是降低氧化速率的主要原因,同时,合金元素Nb稳定了氧化层中的TiN相,因而提高了合金在空气中的抗氧化性能. 相似文献
144.
A weighting algorithm to determine the coordinates of the center of a Gaussian laser beam projected onto a matrix photodetector is considered. The influence of the internal noise of the photodetector, the maximum brightness of the signal at the beam maximum, and the beam radius on the precision of the algorithm is investigated. Recommendations on image processing are presented. 相似文献
145.
146.
To find the exact probability distribution of the global maximum or minimum of a random field within a bounded domain is a pending problem even for Gaussian fields. Except for very special examples of fields, recourse must be taken to approximate reasoning or asymptotic considerations to be judged with respect to accuracy by simulations. In this paper, the problem is addressed through a functional equation that leads to the definition of a class of distribution functions that depend solely on process or field characteristics and domain quantities that can be calculated explicitly. This distribution function class is studied for Gaussian processes in earlier works by the author and it has been obtained explicitly for Gaussian fields on rectangular domains in the plane. Simulation studies show that rather good predictions are obtained for sufficiently smooth wide band Gaussian processes and fields. In this paper, the distribution function is obtained in general for Gaussian fields over arbitrary bounded domains with piecewise continuous and differentiable boundaries, and as in earlier works the distribution function is tested against empirical distribution functions obtained by simulation of sample functions of a smooth approximately Gaussian field, herein called a broken line Hino field. For completeness this particular field type is defined in appendix a and appendix b. The paper concludes with a statistical application on data for plain concrete tensile strength. 相似文献
147.
O.V. TretyakV.A. Skryshevsky V.A. VikulovYu.V. Boyko V.M. Zinchuk 《Thin solid films》2003,445(1):144-150
The character of electronic states in porous silicon (PS)-Si, Pd-PS interfaces, and/or PS bulk at the formation of the metal-PS-silicon heterostructure was studied. The energy parameters were estimated using the deep-level transient spectroscopy and capacitance-voltage characteristics at the accounting of the voltage drop distribution along the structure. The analytical expression for voltage drop distribution along dielectric layer, porous layer and space charge region in silicon was obtained by solving the equation for continuity of the electrostatic induction vector. The electronic states studied were shown to manifest the quasi-continuous sub-band in the energy gap if the porous layer was 30-nm thick. Their density increased, as the energy position was being transformed to a deeper energy level of Ev+0.81 eV at the PS layer growing to 90 nm wide. 相似文献
148.
The present paper is devoted to the analysis of the contact problems with Coulomb friction and large deformation between two hyperelastic bodies. One approach to separate the material nonlinearity and contact nonlinearity is presented. The total Lagrangian formulation is adopted to describe the geometrically nonlinear behavior. Nondifferentiable contact potentials are regularized by means of the augmented Lagrangian method. Numerical examples are carried out in two cases: rigid-deformable contact and deformable-deformable contact with large slips. The numerical results prove that the proposed approach is robust and efficient concerning numerical stability. 相似文献
149.
Kenji Nomura Hiromichi OhtaKazushige Ueda Toshio Kamiya Masahiro HiranoHideo Hosono 《Thin solid films》2003,445(2):322-326
We have investigated the characteristics of transparent metal-insulator-semiconductor field-effect transistors (MISFETs) fabricated using InGaO3(ZnO)m (m=integer) single-crystalline thin films as n-channel layers and amorphous alumina as gate insulator films. The MISFETs exhibit good characteristics such as insensitivity to visible light illumination, off-current as low as ∼1 nA with a positive threshold voltage of ∼3 V and on/off current ratio of 105. The field-effect mobility increased from ∼1 to ∼10 cm2 (V s)−1 as the m-value increased. Room temperature Hall mobility also increased. However, unexpectedly these values were lower than the field-effect mobility. It is explained by existence of shallow localized state in the homologous compounds. 相似文献
150.
Alleviation Effect of Lanthanum on Cadmium Stress in Seedling Hydroponic Culture of Kidney Bean and Corn 总被引:4,自引:0,他引:4
Since1970s,rare earths(RE)have been exten-sively used as micro-fertilizers for crops in China.Ithas already been proved that REcani mprove the pro-duction and quality of crops.However,there havebeen a fewinvestigations about using RE as regulatorin pollution ecology.For example,An et al[1]studiedthe effects of O3on wheat growth and the protectiveeffect of RE.Yan and Zhou et al[2,3]discussed theprotective effect of RE on plants under acid rainstress.Jia et al[4]and Hu et al[5]reported th… 相似文献