基于SiGe量子点实现增强F-N隧穿的低压闪速存储器

提出了一种用于半导体闪速存储器单元的新的Si/SiGe量子点/隧穿氧化层/多晶硅栅多层结构,该结构可以实现增强F-N隧穿的编程和擦除机制.模拟结果表明该结构具有高速和高可靠性的优点.测试结果表明该结构的工作电压比传统NAND结构的存储器单元降低了4V.采用该结构能够实现高速、低功耗和高可靠性的半导体闪速存储器.     

基于BiCMOS技术的高速数字/模拟转换器

基于BiCMOS技术，进行了高速数字/模拟转换器研究. 以并行输入类型，电流工作模式的16位D/A转换器为载体，进行了电路设计、工艺制作和测试. 在±5.0V工作电压下，测试得到转换速率≥30MSPS，建立时间为50ns，增益误差为±8% FSR，积分非线性误差为1/2 LSB，功耗为500mW.     

Magnetic Field‐Induced Phase Transformation in NiMnCoIn Magnetic Shape‐Memory Alloys—A New Actuation Mechanism with Large Work Output

Magnetic shape memory alloys (MSMAs) have recently been developed into a new class of functional materials that are capable of magnetic‐field‐induced actuation, mechanical sensing, magnetic refrigeration, and energy harvesting. In the present work, the magnetic &!hyphen;field‐induced martensitic phase transformation (FIPT) in Ni₄₅Mn_36.5Co₅In_13.5 MSMA single crystals is characterized as a new actuation mechanism with potential to result in ultra‐high actuation work outputs. The effects of the applied magnetic field on the transformation temperatures, magnetization, and superelastic response are investigated. The magnetic work output of NiMnCoIn alloys is determined to be more than 1 MJ m^?3 per Tesla, which is one order of magnitude higher than that of the most well‐known MSMAs, i.e., NiMnGa alloys. In addition, the work output of NiMnCoIn alloys is orientation independent, potentially surpassing the need for single crystals, and not limited by a saturation magnetic field, as opposed to NiMnGa MSMAs. Experimental and theoretical transformation strains and magnetostress levels are determined as a function of crystal orientation. It is found that [111]‐oriented crystals can demonstrate a magnetostress level of 140 MPa T^?1 with 1.2% axial strain under compression. These field‐induced stress and strain levels are significantly higher than those from existing piezoelectric and magnetostrictive actuators. A thermodynamical framework is introduced to comprehend the magnetic energy contributions during FIPT. The present work reveals that the magnetic FIPT mechanism is promising for magnetic actuation applications and provides new opportunities for applications requiring high actuation work‐outputs with relatively large actuation frequencies. One potential issue is the requirement for relatively high critical magnetic fields and field intervals (1.5–3 T) for the onset of FIPT and for reversible FIPT, respectively.     

利用FFT实现长码的直接捕获

在卫星导航系统中,普遍采用了长码扩频信号。长码扩频信号具有很强的抗干扰和保密能力,实现长码的快速直接捕获对于导航系统的军事应用和发展卫星定位系统具有重要意义。利用FFT计算可以使多次的时域伪码相位的循环相关处理转换为频域的一批乘法处理,单次计算即可获得一批相关结果,进而可加快长码的搜索和捕获速度。通过对多种基于FFT的方法进行比较,提出了适于工程应用的实现方式,并利用实际工作环境对设计进行了实际验证,结果表明该处理方法能够实现预期的目的,可以满足工程需要。     

基于零阶统计量的韧性归一化自适应时间延迟估计

依据零阶统计量理论,给出对数矩过程、对数宽平稳及对数各态遍历的定义,提出一种韧性的归一化自适应时间延迟估计方法(简称NZOSTDE).该算法用FIR滤波器对两个含有脉冲噪声的观测信号建模,利用不存在有限方差的脉冲信号经过对数变换后其各阶矩的存在性和几何功率的概念,在对数域基于最小均方误差(LMS)准则归一化自适应得到FIR滤波器的系数,该系数最大值对应的序号就是时间延迟的估计值.本文提出的新算法克服了基于分数低阶统计量(FLOS)算法的局限性.计算机仿真实验表明,NZOSTDE算法在强脉冲噪声环境下比归一化最小平均P范数时间延迟估计方法(简称NLMPTDE)算法更具有韧性.     

Nanoscale Ferroelectricity in Crystalline γ‐Glycine

Ferroelectrics are multifunctional materials that reversibly change their polarization under an electric field. Recently, the search for new ferroelectrics has focused on organic and bio‐organic materials, where polarization switching is used to record/retrieve information in the form of ferroelectric domains. This progress has opened a new avenue for data storage, molecular recognition, and new self‐assembly routes. Crystalline glycine is the simplest amino acid and is widely used by living organisms to build proteins. Here, it is reported for the first time that γ‐glycine, which has been known to be piezoelectric since 1954, is also a ferroelectric, as evidenced by local electromechanical measurements and by the existence of as‐grown and switchable ferroelectric domains in microcrystals grown from the solution. The experimental results are rationalized by molecular simulations that establish that the polarization vector in γ‐glycine can be switched on the nanoscale level, opening a pathway to novel classes of bioelectronic logic and memory devices.     

基于Walsh函数系的椭圆球面波脉冲波形重构方法

目前PSWF的脉冲产生方法在硬件实现方面有着编程复杂,计算量大,资源消耗多等制约因素,因此亟需一种适合实时产生PSWF脉冲信号的方法。通过分析Walsh函数系的特点和产生原理,提出了一种基于Walsh函数系的PSWF脉冲波形重构方法。其中,Walsh系数可以通过已有的PSWF数值点与P编号的Walsh矩阵求解得出,再截取所需精度的Walsh系数参与重构PSWF脉冲波形,从而达到降低存储量的目的。由于Walsh码型中的±1与数字电路中的01有着天然对应的关系,重构时只需将Walsh系数相加减,从而降低计算量。仿真结果表明,利用Walsh函数系可以较好地重构PSWF脉冲波形,且算法简单,避免了乘法运算,降低了计算量和存储量,有利于工程实现。     

铁电存储器制备中关键工艺的改进

传统铁电存储器制备工艺中,存在着Ｐｔ／Ｔｉ下电极刻蚀难、制作的铁电薄 貌不好和上电极容易起壳等问题。文章对铁电存储器制备中的一些关键工艺进行改进,降低了工艺复杂性,解决了上述问题。     

Status of the MBE technology at leti LIR for the manufacturing of HgCdTe focal plane arrays

This paper presents recent developments that have been made in Leti Infrared Laboratory in the field of molecular beam epitaxy (MBE) growth and fabrication of medium wavelength and long wavelength infrared (MWIR and LWIR) HgCdTe devices. The techniques that lead to growth temperature and flux control are presented. Run to run composition reproducibility is investigated on runs of more than 15 consecutively grown layers. Etch pit density in the low 10⁵ cm⁻² and void density lower than 10³ cm⁻² are obtained routinely on CdZnTe substrates. The samples exhibit low n-type carrier concentration in the 10¹⁴ to 10¹⁵ cm⁻³ range and mobility in excess of 10⁵ cm²/Vs at 77 K for epilayers with 9.5 μm cut-off wavelength. LWIR diodes, fabricated with an-on-p homojunction process present dynamic resistance area products which reach values of 8 10³ Ωcm² for a biased voltage of −50 mV and a cutoff wavelength of 9.5 μm at 77 K. A 320 × 240 plane array with a 30 μm pitch operating at 77 K in the MWIR range has been developed using HgCdTe and CdTe layers MBE grown on a Germanium substrate. Mean NEDT value of 8.8 mK together with an operability of 99.94% is obtained. We fabricated MWIR two-color detectors by the superposition of layers of HgCdTe with different compositions and a mixed MESA and planar technology. These detectors are spatially coherent and can be independently addressed. Current voltage curves of 60 × 60 μm² photodiodes have breakdown voltage exceeding 800 mV for each diode. The cutoff wavelength at 77 K is 3.1 μm for the MWIR-1 and 5 μm for the MWIR-2.     

基于内存映射的进程问通信实现跨平台软件互联互通

在某型号改研制过程中,软件运行于WindowsXP操作系统中,需要将VC平台下编写的软件无缝嵌入delphi平台下编写的软件中,实现两个单独运行进程的互联互通。以内存文件映射技术为基础,提出了将共享内存区分为读数据区和写数据区,并利用特定字节设定允许读写标志。在读写数据时,分剐在两个进程中采用间隔相等的轮询定时器,实现了在两个进程中数据的双向通信。后续试验表明,该方法可靠实用,软件改动量小,极大地促进了工厂的型号研制。