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41.
Rossato Janine I.; Bonini Juliana S.; Coitinho Adriana S.; Vianna Monica R. M.; Medina Jorge H.; Cammarota Martín; Izquierdo Iván 《Canadian Metallurgical Quarterly》2004,118(3):563
The gamma aminobutyric acid-A (GABAA) agonist, muscimol, the glutamate N-methyl-D-aspartate (NMDA) receptor antagonist, D-2-amino-5-phosphonopentanoic acid (AP5), and the inhibitor of the extracellularly regulated kinases (ERKs), UO 126, cause retrograde amnesia when administered to the hippocampus. In the present study, the authors found that they all cause retrograde amnesia for 1-trial inhibitory avoidance, not only when infused into the dorsal CA1 region of the hippocampus, but also when infused into the basolateral amygdala or the entorhinal, parietal, and posterior cingulate cortices. The posttraining time course of the effect of each drug was, however, quite different across brain structures. Thus, in all of them, NMDA receptors and the ERK pathway are indispensable for memory consolidation, and GABAA receptor activation inhibits memory consolidation: but in each case, their influence is interwoven differently. (PsycINFO Database Record (c) 2010 APA, all rights reserved) 相似文献
42.
A mixed mode digital/analog special purpose VLSI hardware implementation of an associative memory with neural architecture is presented. The memory concept is based on a matrix architecture with binary storage elements holding the connection weights. To enhance the processing speed analog circuit techniques are applied to implement the algorithm for the association. To keep the memory density as high as possible two design strategies are considered. First, the number of transistors per storage element is kept to a minimum. In this paper a circuit technique that uses a single 6-transistor cell for weight storage and analog signal processing is proposed. Second, the device precision has been chosen to a moderate level to save area as much as possible. Since device mismatch limits the performance of analog circuits, the impact of device precision on the circuit performance is explicitly discussed. It is shown that the device precision limits the number of rows activated in parallel. Since the input vector as well as the output vector are considered to be sparsely coded it is concluded, that even for large matrices the proposed circuit technique is appropriate and ultra large scale integration with a large number of connection weights is feasible. 相似文献
43.
对于今天的织物,易护理性是一项基本要求。然而,理想的易护理效果不可能仅通过Tencel纤维本身的性能来获得,合适的织物组织结构、恰当的前处理,以及最佳的高级整理加工可以提高Tencel织物的易护理性能,并超过其他纤维素纤维。关于织物组织结构的影响已经在其他杂志上有过讨论。本文将说明如何采用不同的前处理、后整理加工,获得高档最终产品的方法。 相似文献
44.
This paper considers the principles of algorithmic and software implementation of the software system NADRA 3D designed to
analyze processes in three-dimensional multicomponent soil media. The principles of operation of NADRA 3D are described.
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Translated from Kibernetika i Sistemnyi Analiz, No. 6, pp. 157–174, November–December 2006. 相似文献
45.
采用化学分析、金相检验及力学性能测定等方法,对锅炉对流管爆裂原因进行了分析。结果表明,长期超温运行而引起的蠕变是导致爆裂的主要原因。 相似文献
46.
Yoshihiro Yajima 《时间序列分析杂志》1985,6(3):187-201
Abstract. We shall investigate the asymptotic behaviour of the sample autocorrelations and partial autocorrelations of a multiplicative ARIMA process and derive their limiting distributions. Some simulations are presented to illustrate the results obtained. 相似文献
47.
Chih-Wea Wang Chi-Feng Wu Jin-Fu Li Cheng-Wen Wu Tony Teng Kevin Chiu Hsiao-Ping Lin 《Journal of Electronic Testing》2002,18(6):637-647
In this paper we propose a novel built-in self-test (BIST) design for embedded SRAM cores. Our contribution includes a compact and efficient BIST circuit with diagnosis support and an automatic diagnostic system. The diagnosis module of our BIST circuit can capture the error syndromes as well as fault locations for the purposes of repair and fault/failure analysis. In addition, our design provides programmability for custom March algorithms with lower hardware cost. The combination of the on-line programming mode and diagnostic system dramatically reduces the effort in design debugging and yield enhancement. We have designed and implemented test chips with our BIST design. Experimental results show that the area overhead of the proposed BIST design is only 2.4% for a 128 KB SRAM, and 0.65% for a 2 MB one. 相似文献
48.
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50.
NiTi形状记忆薄膜的显微结构和力学性能 总被引:3,自引:0,他引:3
NiTi形状记忆合金薄膜具有形状记忆效应,极有希望用于制造高技术领域微电子机械系统中的微型激发器。NiTi形状记忆合金薄膜在制备和使用过程中需要高品质(衬)底材。本文利用高分辨电子显微学和高分辨分析电子显微学详细研究了硅底材NiTi形状记忆合金薄膜的NiTi/Si和NiTi/SiO2微结构体系,包括薄膜精细结构和界面反应。也研究了其显微结构和力学性能的关系。特别给出了NiTi形状记忆合金薄膜产生疲劳过程的微观过程的起因,通过高达十万个使用热循环前后样品显微结构变化的比较,发现纳米尺度上的TiNi3新相的形成导致疲劳过程的发生。如何抑制TiNi3新相形成的研究正在进行之中,这将为进一步提高NiTi形状记忆合金的使用寿命指出方向。 相似文献