New current-mode current-controlled universal filter with single input and three outputs

In this study, a new current-mode current-controlled universal filter with single input and three outputs is presented. The proposed circuit uses single-output current controlled conveyors (CCCIIs) and can simultaneously realize lowpass, bandpass and highpass filter functions all at high impedance outputs. Realization of notch and allpass responses does not require additional active elements. The circuit enjoys independent current-control of the parameters ω₀ and ω₀/Q without disturbing the gains of the lowpass, bandpass and highpass filters. Both its active and passive sensitivities are low.     

Design of a capacitor cross-coupled dual-band LNA with switched current-reuse technique

This paper presents the design of a 2.5/3.5-GHz dual-band low-power and low-noise CMOS amplifier (LNA), which uses the capacitor cross-coupling technique and current-reuse method with four switches. The proposed LNA uses a single RF block and a broadband input stage, which is a key aspect for the easy reconfiguration of a dual-band LNA. Switching at the inter-stage and output allows for the selection of a different standard. The dual-band LNA attenuates the undesired interference of a broadband gain response circuit, which allows the linearity of the amplifier to be improved. The capacitor cross-coupled gm-boosting method improves the NF and reduces the current consumption. The proposed LNA employs a current-reused structure to decrease the total power consumption. The inter-stage and output switched resonators switch the LNA between the 2.5-GHz and 3.5-GHz bands. The proposed dual-band LNA optimises power consumption by the securing gain, noise figure and linearity. The simulated performance reveals gains of 16.7 dB and 19.6 dB, and noise figures of 3.04 dB and 2.63 dB at the two frequency bands, respectively. The linearity parameters of IIP3 are ?5.7 dBm at 2.5 GHz and ?9.7 dBm at 3.5 GHz. The proposed dual-band LNA consumes 5.6 mW from a 1.8 V power supply.     

Linearity improvement of cascode low-noise amplifiers using double DS method with a tuned inductor

We propose a highly linear low-noise amplifier (LNA) using the double derivative superposition method with a tuned inductor. This topology has an auxiliary common gate stage of the cascode amplifier to cancel each third-order intermodulation distortion (IMD3) component and can provide a high third-order input intercept point (IIP3) for the 5.25 GHz frequency band. From the simulation results using the TSMC 0.18 μm RF CMOS process, the IIP3 in the proposed cascode LNAs can be improved by 9 dB, compared with the conventional derivative superposition method. The proposed LNA achieves an IIP3 of + 15 dBm with a gain of 10.5 dB, a noise figure of 2.4 dB, and a power consumption of 6 mA at 1.5 V.     

低噪音电缆

从电缆噪音的基本概念出发,分析了电缆产生噪音的多种机理。就低噪音电缆的研发、生产现状,介绍了现有低噪音电缆的材料、结构、设计及品种。从电缆材料的选择、结构设计、生产工艺装备、标准及检测等多方面,详细论述了低噪音电缆的设计理念与技术。     

无线系统中的RF器件与电路

介绍了下一代无线系统中存在的问题 ,分别概述了无线系统中 RF器件与电路的发展与现状。     

一种新型低噪声掺Er光纤放大器的研究

提出了一种新型的低噪声掺Er光纤放大器(EDFA)。将光波长交错器的输入端口与普通EDFA的输出端相连接,用于降低噪声,信号光由光波长交错器的偶信道端口输出。利用光波长交错器的梳状反射特性,抑制EDFA的放大自发辐射(ASE),改善EDFA的噪声特性,使其具有低噪声的特点。采用4m长的掺Er光纤(EDF)作为增益介质,小信号功率为-26dBm时,在1530～1560nm带宽范围内,测得低噪声EDFA的噪声系数低于3.83dB,仅比噪声系数的量子极限3dB大0.83dB。     

低噪声复合托板水下声学试验研究

提出了集成应用空心振质量块、聚氨酯吸声带板的低噪声复合托板结构方案,并初步给出了实船应用方法。在此基础上开展了大尺度双壳结构水下振动、声辐射及输入功率流的试验研究。结果表明：应用低噪声复合托板后,双壳结构外壳20Hz~3000Hz频段振动加速度级降低3.1dB,5m处近场辐射声压级降低7.2dB且沿顺时针90°~270°周向降噪效果最为显著;结构输入功率流显著降低,由多峰变为单峰且峰值频率略向低频移动。     

纳米CMOS低噪声放大器的研究

介绍了纳米CMOS器件及其新技术,同时利用安捷伦公司的ADS软件,基于台积电0．18μm的RFCMOS工艺,设计了中心频率为5．2GHz的纳米CMOS低噪声放大器,达到了较好的性能。     

一种用于地面和有线接收机的宽带低噪声放大器

提出并设计了一种用于数字电视接收调谐芯片的宽带低噪声放大器.该设计采用0.35μm SiGe BiCMOS工艺,器件的主要性能为:增益等于18.8dB,增益平坦度小于1.4dB,噪声系数小于5dB,1dB压缩点为-2dBm,输入三阶交调为8dBm.在5V供电的情况下,直流功耗为120mW.     

Ka波段AlGaAs/InGaAs低噪声PHEMT异质材料结构的计算机优化与实验结果

讨论了毫米波低噪声ＰＨＥＭＴ的设计要点，藕助Ｓｃｈｒｏｅｄｉｎｇｅｒ／Ｐｏｉｓｓｏｎ方程及器件方程，进行了Ｋａ波段ＡｌＧａ／ＩｎＧａＡｓ低噪声ＰＨＥＭＴ用异质层数值计算及ＣＡＤ优化，确定出分子束外延ＭＢＥ时诸层的最佳组分、浓度、与厚度、上述优化分析的结果用于器件的实验研制，取得了３４．４ＧＨｚ下噪声系数（ＮＦ）１．９２ｄＢ、相关增益Ｇａ６．５ｄＢ的国内最好结果。