从特征尺寸的缩小看光刻技术的发展

从特征尺寸不断缩小变化的角度阐述了近代光刻技术发展的历程。指出90nm节点的主流光刻技术是193nmArF光刻;193nm浸入式光刻技术作为65nm和45nm节点的首选光刻技术,如果配合二次曝光技术,还可以扩展到32nm节点的应用,但成本会增加;如果特征尺寸缩小到22nm和16nm节点,EUV光刻、无掩模光刻以及纳米压印光刻等将成为未来发展的重要研究方向。在对各种光刻技术的原理、特点以及优缺点等分析对比的基础上,对未来主流光刻技术的发展做了一定的展望。     

Laser-induced direct etching of GaAs using chlorofluorocarbon (CFC) alternative gases

Non-ozone layer destructive chlorofluorocarbon (CFC) alternatives have been initially used for laser-induced thermochemical etching of GaAs. The CFC alternatives used here are CHClF₂ and C₂H₂F₄. Respective etching rates of 188 and 160 μm/s were achieved using CHC1F₂ and C₂H₂F₄ gases. Aspect ratios of 2.5 and 1.5 were achieved with a single laser scan for CHClF₂ and C₂H₂F₄, respectively. The presence of some reaction products deposited on the etched region was dependent on three variables: laser power, scan speed, and gas pressure. Chemical compositions of the reaction products were measured by Auger electron spectroscopy.     

Tracking system of the Fast‐Intelligent‐Tracking (F!T) tube

Abstract— In this paper, we describe the principles of the tracking system of the Fast Intelligent Tracking (F!T) tube. We will show how the tracking system is divided in a fast‐responding system and a slowly responding system, according to the observed deviations of the beam positions from their intended positions.     

抗高过载微压传感器

在提高微压传感器灵敏度的研究过程中 ,会遇到非线性和稳定性变差、过载能力不够以及静电封接时背岛与玻璃粘接造成器件失效等现象。提出了应力匀散结构和两层岛的限位结构 ,利用有限元分析和近似解析分析 ,设计了新的双岛 -梁 -膜结构 ,成功地研制出抗高过载微压传感器。量程为 0 .3kPa ,总精度为 0 .4% ,过载能力 >140倍满量程