Integrated linear giga-ohm resistance using current scaling

Integrated grounded resistors of very large value are essential circuit elements for the design of compact filters with very low cut-off frequencies. A typical application of such filters is the rejection of DC voltages in amplifier circuits especially in physiological recording systems exhibiting electrode offset and low-frequency drift. In this letter, the implementation of a giga-ohm resistance is presented using a conventional fixed-gain OTA and a cascade of weak-inversion current scalers. The circuit yields a short design time, small power and area consumption as well as high linearity. A test circuit having an area of 0.011 mm² integrated in 0.35 μm CMOS is presented which yields a 41 Hz cut-off frequency, 1 V input range and less than −52 dB THD when connected to an integrated 1 pF capacitor, making it a suitable solution for the rejection of mains interference and offset in wearable biomedical applications.     

Ni-Cr桥膜换能元的制备

为了制作出阻值一致性好,发火电压低的金属桥膜换能元,对Ni-Cr薄膜换能元制作过程中的薄膜溅射、刻蚀等工艺进行了探索,并对制作的换能元参数进行了测试.结果显示随着溅射功率的减小,薄膜的沉积速率减小,成膜致密性提高;在一定范围内,刻蚀液中高氯酸所占的比例越大,刻蚀用时越短.制作的Ni-Cr薄膜换能元电阻的一致性较好,在4...     

TaN薄膜电阻的功率加载特性研究

通过射频反应溅射,在氧化铝基板上制备了TaN薄膜电阻。研究了TaN薄膜电阻在不同加载功率密度下表面温度的变化,研究了高温下TaN薄膜氧化所造成的电阻失效。按照混合集成电路规范的测试条件,在环境温度为70℃,TaN薄膜电阻的厚度为0.1μm,氧化铝基板厚度为0.125mm的条件下,TaN薄膜电阻可以耐受4W/mm2的功率密度,或者9.4W/mm2的1min瞬时功率密度冲击。     

范德堡和条状结构埋层电阻的测试及研究

薄层电阻经常被用于PCM以及SPICE模型的关键电阻测试。在正常情况下呈现欧姆特性。同时我们可以看到,随偏压的变化,JFET器件中的埋层电阻也发生相应的变化。本文研究了条形电阻和范德堡两种标准结构的电阻,同时利用2D、3D器件模拟,给出了优化电阻测试的路径和方法。     

关于Howland电流泵电路的分析与讨论

Howland 电流泵电路是一种适用于接地负载的电压-电流转换电路。本文指出了该电路分析过程可能出现的错误,并给出了三种不同的分析与证明方法。从教学的角度看,这三种方法各有不同的侧重点,对学生已掌握的电路理论知识有不同的要求。上述分析结果可供讲授电路课程和开设电路实验的教师参考。     

铝阳极氧化基板制备过程对埋置型Ta-N薄膜电阻的影响

在铝阳极氧化多层基板内用RF反应溅射制备了埋置型Ta-N薄膜电阻,研究了铝阳极氧化过程对Ta-N薄膜电阻和显微结构的影响.实验结果表明:Ta-N薄膜受上层多孔氧化铝膜影响在表层形成了由Ta2O5和Ta-O-N组成的氧化物凸起绝缘层,氧化物凸起层厚度与氧化电压有关.底层Ta-N薄膜电阻率和电阻温度系数基本保持不变,表层氧化凸起使电阻稳定性增加.     

High-temperature oxidation of Pt-45Pd-10Rh

The surfaces of Pt-45Pd-10Rh foils oxidized over the range 875–1075 K in a 20% O₂-Ar mixture at atmospheric pressure were examined by Auger electron, X-ray photoelectron, and Raman spectroscopy. The composition of the oxide formed on the surface was found to vary with temperature from predominantly PdO at 875 K to PdRhO₂ at 1075 K. Only a few atomic percent Pt was observed, present in both the metallic and (apparently) +1 oxidation states at 875 K and in the metallic state at 1075 K. The formation of PdRhO₂ (and no Rh₂O₃) at 1075 K was found to persist upon reoxidation following a low-temperature reduction cycle in which the increased Rh concentration on the surface was retained. An oxidation-induced Rh enrichment of the surface of the alloy foil beyond 50 at. % does not appear likely within the temperature/pressure regime investigated.     

新型高精度高效率LED照明驱动电路的实现

提出并设计了一种高精度、高效率LED照明驱动电路.采用平均电流控制模式代替峰值电流的控制模式;同时,采用低阶低侧的Buck拓扑结构,使输出驱动电流的精度误差控制在1％之内.整体电路的转换效率最高可达96％以上,输出驱动电流为350 mA,可驱动8个1W的HBLED灯.该设计基于CSMC 0.5μm 40 V BCD工艺,版图尺寸约为1.4 mm×1.4 mm.通过流片验证了设计的可行性.     

RXF21型抗电涌线绕电阻器及其应用

线绕电阻器广泛用于电子节能灯和充电器等产品,本文介绍了一种新型RXF21型抗电涌线绕电阻器的应用方法.重点论述线绕电阻器耐负荷和负载短路保护功能以及抗电涌冲击性能.     

Active only integrator and differentiator with tunable time constants

In this paper new active only current-mode integrator and differentiator with electronically tunable time constants are described. They are composed of one operational amplifier (OA) and two operational transconductance amplifiers (OTAs), and are suitable for monolithic implementation either with CMOS or bipolar technologies. No realizability conditions are imposed for the proposed circuits and all of the active sensitivities are low. The performances of the circuits are demonstrated on the PSPICE platform.