面积坐标法构造含转角自由度的四结点膜元

以四边形面积坐标作为工具,构造了两个含转角自由度的广义协调四边形单元AQ4和lAQ4。它们通过强式分片检验,与同类单元相比,具有很高的计算精度,能消除梯形闭锁现象,有很强的抗网格畸变的能力。     

龙潭水电站励磁装置可控硅易损原因及改进措施

通过龙潭水电站对励磁装置可控硅元件实施过电压保护改进前后实际效果的分析,介绍了一种有效的过压保护方式.     

径向水平井弯曲转向机构影响因素仿真研究

针对径向水平井钻进中钻杆弯曲转向前进运动困难的问题,通过建立弯曲转向机构仿真有限元模型,对其主要影响因素:滑道轨迹曲率、间隙、工作压力、滚轮形状与位置和钻杆壁厚等用ANSYS软件进行仿真研究。研究表明:影响截面变形的主要因素是滑道曲率的改变和滑道摩擦因数,钻井失败时钻杆所受阻力的增大不是因为升高工作压力导致截面变形过大与滑道干涉所致,钻杆经校直段,钻头中轴线与校直中心线存在一定的角度,即钻杆的前进轨迹就会偏离理论值,或与地层干涉,或可能再次发生弯曲变形;另一主要原因是转向器滑道工作恶化。增加钻杆壁厚,降低工作压力和滑道摩擦因数,设计合理弯曲转向机构是解决问题的关键。     

嵌人式与独立存储器设计上的差异分析和研究

进入21世纪,随着集成电路的发展,SoC(System on Chip)片上系统应运而生。而作为SoC重要组成部分的嵌入式存储器,在SoC中所占的比重正逐步增加,并起着越来越重要的作用,那么嵌入式存储器与独立的存储器芯片在设计上存在着哪些差异?对此本文将以NOR型闪存为例在制造工艺的选取、衍生产品的设计、功耗与噪声、后端功能仿真、测试与修复等方面进行分析和研究。     

非稳定井流模型的半解析解

为了提高非稳定渗流计算的计算精度 ,通过数学分析得到了水位传导系数随时间变化时 ,一类非稳定渗流井流模型的半解析解 ,并进行了计算比较     

WAVE INTERACTION WITH PERFORATED CAISSON BREAKWATERS

The reflection coefficient of perforated caissons and the total horizontal forces acting on them were experimentally and numerically analyzed and discussed when wave propagates normally. To consider the viscosity effect of fluid and nonlinear action of waves on structures, the VOF (Volume Of Fluid) method combined with the k-ε turbulence model was used to simulate the interaction between waves and structures. Governing equations were solved with the finite difference method. Through 2D experimental study in the wave flume, the empirical relationship between the reflection coefficient of perforated caissons and the main affecting factors were obtained from the experimental data using the least square method. Also the correlation between the ratio of the total horizontal force acting on perforated caisson and the force acting on solid caisson and the main affecting factors were regressed from the experimental data.     

基于CB的串行口和接口板端口程序应用

串行口及接口板端口是计算机通信的主要途径 ,也是目前计算机工程测控中通用的基本方法。C Builder (简称CB)编程语言以其功能完备、开发效率高的特点而成为目前流行的程序开发工具 ,介绍了利用CB语言编写串行口和端口通信的程序的方法 ,并对具体的各方法编写了相应的示例。     

热镀锌板(卷)工程设计中的环境保护问题

对热镀锌板(卷)的生产工艺、主要生产设备进行了简要介绍，并就其污染源(工序)、生产过程中产生的污染物及其控制措施进行了评述，同时就设计和生产中宜注意的几个环保问题进行了分析。     

一种基于空间到达角的卫星电子侦察信号分选方法

在建立简化的卫星电子侦察空间模型的基础上，提出了一种利用空间到达角分选卫星电子侦察信号的新方法。通过仿真实验验证了这种方法的可行性。该方法可用于密集信号的预处理。     

Platinum Binuclear Complexes as Phosphorescent Dopants for Monochromatic and White Organic Light‐Emitting Diodes

Efficient blue‐, green‐, and red‐light‐emitting organic diodes are fabricated using binuclear platinum complexes as phosphorescent dopants. The series of complexes used here have pyrazolate bridging ligands and the general formula C^∧NPt(μ‐pz)₂PtC^∧N (where C^∧N = 2‐(4′,6′‐difluorophenyl)pyridinato‐N,C^2′, pz = pyrazole ( 1 ), 3‐methyl‐5‐tert‐butylpyrazole ( 2 ), and 3,5‐bis(tert‐butyl)pyrazole ( 3 )). The Pt–Pt distance in the complexes, which decreases in the order 1 > 2 > 3 , solely determines the electroluminescence color of the organic light‐emitting diodes (OLEDs). Blue OLEDs fabricated using 8 % 1 doped into a 3,5‐bis(N‐carbazolyl)benzene (mCP) host have a quantum efficiency of 4.3 % at 120 Cd m^–2, a brightness of 3900 Cd m^–2 at 12 V, and Commission Internationale de L'Eclairage (CIE) coordinates of (0.11, 0.24). Green and red OLEDs fabricated with 2 and 3 , respectively, also give high quantum efficiencies (～ 6.7 %), with CIE coordinates of (0.31, 0.63) and (0.59, 0.46), respectively. The current‐density–voltage characteristics of devices made using dopants 2 and 3 indicate that hole trapping is enhanced by short Pt–Pt distances (< 3.1 Å). Blue electrophosphorescence is achieved by taking advantage of the binuclear molecular geometry in order to suppress dopant intermolecular interactions. No evidence of low‐energy emission from aggregate states is observed in OLEDs made with 50 % 1 doped into mCP. OLEDs made using 100 % 1 as an emissive layer display red luminescence, which is believed to originate from distorted complexes with compressed Pt–Pt separations located in defect sites within the neat film. White OLEDs are fabricated using 1 and 3 in three different device architectures, either with one or two dopants in dual emissive layers or both dopants in a single emissive layer. All the white OLEDs have high quantum efficiency (～ 5 %) and brightness (～ 600 Cd m^–2 at 10 V).