吊车钢丝绳非线性谐振建模及消谐控制

对于欠驱动吊车而言, 已有的方法都只考虑如何消除摆角. 然而当钢丝绳的摆角很小时, 钢丝绳上可能仍 然会存在严重的谐振. 针对吊车的消谐问题, 本文率先提出了一种基于钢丝绳–电机轴的非线性谐振力矩模型. 具体而言, 先利用振动力学的方法, 建立了非线性谐振力矩模型, 该模型可以将钢丝绳上的非线性谐振力矩归算到电机轴上, 然后通过电机控制器调节电机的输出力矩, 使得电机输出的基波主力矩上叠加一个大小相等方向相反的非线 性谐振力矩, 以达到消除钢丝绳上的谐振力矩的目的. 最后通过Simulink仿真和实验证明该方法具有良好的控制性 能, 不仅可以有效消除钢丝绳上的谐振, 并且能进一步减小摆角.     

一种双边LCC补偿无线电能传输变换器谐振网络设计方法

针对双边LCC补偿方式的无线电能传输变换器,提出了一种谐振网络设计方法：基于抑制谐波电流、压缩磁元件体积以及在最大传输距离与最大横向偏移状态传输功率可接近额定功率的考虑,依据额定传输功率、开关频率等约束条件,确定谐振网络全部元件(包括松耦合变压器)的电参数。在此基础上提出了一种相应的带磁芯平面螺旋线圈松耦合变压器尺寸设计方案：依据松耦合变压器处于最大传输距离、最大横向偏移状态时的互感值,从理论上估算出其尺寸范围,再以少量有限元仿真搜索到其最佳尺寸。设计并制作了一台额定输出功率为4.5 kW的样机,验证了所提设计方法的正确性。     

BP神经网络结合变量选择方法在牛奶蛋白质含量检测中的应用北大核心CSCD

牛奶中的蛋白质含量会影响牛奶的品质,利用高光谱图像的光谱特征信息研究对牛奶蛋白质含量预测的可行性。本文提出一种基于竞争性自适应重加权算法(competitive adaptive reweighted sampling, CARS)和连续投影算法(successive projections algorithm, SPA)结合多层前馈神经网络(back propagation, BP)的预测建模方法,实验以含有不同浓度蛋白质的牛奶为对象,利用可见光/近红外高光谱成像系统共采集到5种牛奶共计250组高光谱数据,通过实验对比选择采用标准化方法对获取到的吸收光谱预处理,然后采用CARS结合SPA筛选特征波长,得到18个特征波长,建立CARS-SPA-BP模型,经过试验,CARS-SPA-BP模型的训练集决定系数和测试集决定系数R;和R;分别达到0.971和0.968,训练集均方根误差(root mean square error of calibration,RMSEC)和测试集均方根误差(root mean square error of prediction,RMSEP)达到了0.033和0.034。研究发现,采用CARS结合SPA筛选的牛奶特征波长建立的多层前馈神经网络模型,其模型预测结果与全波长建模相比并没有明显降低,因此将CARS结合SPA用于波长筛选并且结合BP神经网络基本可以完成对牛奶蛋白质含量的预测。为验证CARS-SPA-BP模型的预测能力,在相同数据环境下,使用较为传统的偏最小二乘回归(partial least squares regression, PLSR)进行建模,实验结果表明,CARS-SPA-BP相较于PLSR,R;和RMSEP均有明显提升。研究表明,CARS-SPA-BP可充分利用牛奶光谱特征信息实现较高精度的牛奶蛋白质含量检测。     

梯形悬臂梁结构能量收集器的设计与研究

传统矩形悬臂梁上的应力呈非均匀分布,在梁固定端存在一个应力集中区,且沿轴向方向衰减,从而影响压电层的极化效果。同时,矩形悬臂梁结构能量收集器的谐振频率较高。为解决这一问题,文章提出了一种“倒”梯形结构的能量收集器结构。该梯形结构可以有效扩展极化区域,从而捕获到更低频的振动能量。实验发现,在1g振动加速度下,该能量收集器在124 Hz下输出电压为404 mV,输出功率达到41.3 μW。     

基于闭式谐振腔的一体化介电常数测量系统

为替代矢量网络分析仪,形成一套专用于闭式谐振腔的测量系统,本文采用频谱分析仪模块和跟踪发生器模块,基于C++和VISA库函数进行系统控制,使两模块可以同步收发射频信号,实现闭式谐振腔谐振频率和Q值的测量功能,最终实现微波介质材料的介电常数的测量,形成一套一体化闭式谐振腔介电常数测量系统。该系统与矢量网络分析仪对比测量微波介质陶瓷材料K65,介电常数的相对误差为5.5×10^-3,tanδ的相对误差为-3.74×10^-2;对比测量材料K35,介电常数的相对误差为-1.69×10^-3,tanδ的相对误差为1.08×10^-1。测量结果相对误差较小,介电常数的相对误差小于0.01,tanδ的相对误差小于0.5,说明一体化介电常数测量系统的测量结果准确,可用于闭式谐振腔方法下的介电常数测量,也可推广用于其他介电常数测量系统。     

Dominance of Plasmonic Resonant Energy Transfer over Direct Electron Transfer in Substantially Enhanced Water Oxidation Activity of BiVO4 by Shape‐Controlled Au Nanoparticles

The performance of plasmonic Au nanostructure/metal oxide heterointerface shows great promise in enhancing photoactivity, due to its ability to confine light to the small volume inside the semiconductor and modify the interfacial electronic band structure. While the shape control of Au nanoparticles (NPs) is crucial for moderate bandgap semiconductors, because plasmonic resonance by interband excitations overlaps above the absorption edge of semiconductors, its critical role in water splitting is still not fully understood. Here, first, the plasmonic effects of shape‐controlled Au NPs on bismuth vanadate (BiVO₄) are studied, and a largely enhanced photoactivity of BiVO₄ is reported by introducing the octahedral Au NPs. The octahedral Au NP/BiVO₄ achieves 2.4 mA cm^?2 at the 1.23 V versus reversible hydrogen electrode, which is the threefold enhancement compared to BiVO₄. It is the highest value among the previously reported plasmonic Au NPs/BiVO₄. Improved photoactivity is attributed to the localized surface plasmon resonance; direct electron transfer (DET), plasmonic resonant energy transfer (PRET). The PRET can be stressed over DET when considering the moderate bandgap semiconductor. Enhanced water oxidation induced by the shape‐controlled Au NPs is applicable to moderate semiconductors, and shows a systematic study to explore new efficient plasmonic solar water splitting cells.     

Design of all-optical tunable filter based on two-dimensional photonic crystals for WDM (wave division multiplexing) applications

In this paper, all-optical tunable filters based on two-dimensional photonic crystals with very small dimensions for optical telecommunication of WDM technology are designed and simulated. The structure is made of air holes in a dielectric background. The tuning is done by changing resonant defect angle. The channels obtained for this structure will be set in wavelength range of 1550 nm. Created channels are at wavelengths of 1550, 1551, 1552, and 1565 (16 channels); the distance between adjacent channels is 1 nm. Design and simulation of this filter is done by RSOFT software. Quality factor, transmission efficiency, and band gap shows that filter performance is very good.     

压电谐振驱动三足机器人的平面运动

设计并实现了一类利用压电陶瓷片作动,由三条曲梁足支撑的振动驱动机器人.建立了在一条足共振驱动下机器人水平运动的动力学方程,数值计算解释了摩擦作用下的运动机理,寻找到异性摩擦对运动方向、速度的影响和压电激励频率与运动速度间的关系.通过建立圆弧曲梁控制方程求解圆弧型足面内振动的固有频率及振型,设计了三组不同频率的圆弧曲梁足参数,实验制作了机器人模型,利用压电控制三足间振动的共振切换,实现了预想的三个方向的运动以达到平面运动的效果,实验测量了机器人的运动速度与理论计算吻合得较好.     

Phototherapy and the benefits of LEDs

Abstract— Light sources with wavelengths from near‐UV to near‐IR can cure skin diseases, relieve pain in the body, reduce wrinkles on the skin, treat acne on the face, grow hairs on head, and heal various kinds of other diseases. This is called phototherapy. Near‐UV, visible, and near‐IR LEDs now enable phototherapy viable for personal use because of the possibility of controlling the intensity of LED light with specific wavelengths. The medical applications of LEDs for phototherapy are reviewed.     

High‐efficiency transmission‐line inverse Class F power amplifiers for 2‐GHz WCDMA systems

In this article, a novel load‐network solution to implement the transmission‐line inverse Class F power amplifiers for base station WCDMA applications is presented. The theoretical analysis is based on an analytical derivation of the optimum load‐network parameters to control the second and third harmonics at the device output, including the device output parasitic shunt capacitance and series inductance. The transmission‐line inverse Class F LDMOSFET and GaN HEMT power amplifiers using NXP BLF6G22LS‐75 and CREE CGH27060F devices, respectively, were designed and measured. The high‐performance results with the drain efficiency of 70.2% and power gain of 18.0 dB for a 60‐W LDMOSFET power amplifier and with the drain efficiency of 82.3% and power gain of 14.3 dB for a 50‐W GaN HEMT power amplifier were achieved at an operating frequency of 2.14 GHz. © 2011 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2011.