The Bipolar Field-Effect Transistor: ⅩⅢ. Physical Realizations of the Transistor and Circuits (One-Two-MOS-Gates on Thin-Thick Pure-Impure Base)

This paper reports the physical realization of the Bipolar Field-Effect Transistor (BiFET) and its one-transistor basic building block circuits. Examples are given for the one and two MOS gates on thin and thick, pure and impure base, with electron and hole contacts, and the corresponding theoretical current-voltage characteristics previously computed by us, without generation-recombination-trapping-tunneling of electrons and holes. These ex-amples include the one-MOS-gate on semi-infinite thick impure base transistor (the bulk transistor) and the impure-thin-base Silicon-on-Insulator (SOI) transistor and the two-MOS-gates on thin base transistors (the FinFET and the Thin Film Transistor TFT). Figures are given with the cross-section views containing the electron and hole concen-tration and current density distributions and trajectories and the corresponding DC current-voltage characteristics.     

基于VTK的体绘制系统实现

可视化是在信息化进程中发展起来的一个全新领域,VTK是一个功能强大的可视化工具包。体绘制技术作为可视化最活跃的领域之一,其算法不断得到改进和完善。简要介绍VTK的功能和应用,描述几种不同的绘制算法,并在此基础上用TCL语言实现一个简单的基于VTK的体绘制系统,给出具体设计实现过程。该系统实现体绘制技术中4种不同的算法,为VTK工具包更好地应用于可视化领域提供了实践基础。     

Performance analysis of SiGe double-gate N-MOSFET

The major purpose of this paper is to find an alternative configuration that not only minimizes the limitations of single-gate (SG) MOSFETs but also provides the better replacement for future technology. In this paper, the electrical characteristics of SiGe double-gate N-MOSFET are demonstrated and compared with electrical characteristics of Si double-gate N-MOSFET. Furthermore, in this paper the electrical characteristics of Si double-gate N-MOSFET are demonstrated and compared with electrical characteristics of Si single-gate N-MOSFET. The simulations are carried out for the device at different operational voltages using Cogenda Visual TCAD tool. Moreover, we have designed its structure and studied both I_d-V_g characteristics for different voltages namely 0.05, 0.1, 0.5, 0.8, 1 and 1.5 V and I_d-V_d characteristics for different voltages namely 0.1, 0.5, 1 and 1.5 V at work functions 4.5, 4.6 and 4.8 eV for this structure. The performance parameters investigated in this paper are threshold voltage, DIBL, subthreshold slope, GIDL, volume inversion and MMCR.     

Ruthenium complex-cored dendrimers: Shedding light on efficiency trade-offs in dye-sensitised solar cells

A series of first generation dendrimers provide important insight into the performance of dye-sensitised solar cells (DSSCs). The dendrimers are comprised of a substituted [cis-di(thiocyanato)-bis(2,2′-bipyridyl)ruthenium(II) complex, first generation biphenyl-based dendrons, and either four, eight, or twelve 2-ethylhexyloxy surface groups. The dendrimers were bound to the titanium dioxide of the DSSCs via carboxylate groups on one of the bipyridyl moieties in a similar manner to the ‘gold standard’ [cis-di(thiocyanato)-bis(4,4′-dicarboxylate-2,2′-bipyridyl)]ruthenium(II) 1 (N3). Exchanging one pair of the carboxylate groups on one bipyridyl ligand of N3 with styryl units to give [cis-di(thiocyanato)-(4,4′-dicarboxylate-2,2′-bipyridyl)-(4,4′-distyryl-2,2′-bipyridyl]ruthenium(II) 2 resulted in an improvement in device performance (7.19% ± 0.11% for 2 versus 6.94% ± 0.12% for N3). Devices containing the dendrimers also had good efficiencies but the performance was found to decrease with the increasing number of surface groups, which gives rise to an increase in the molecular volume of the dye. The device containing the dendrimer with four surface groups, 3, had a global efficiency of 6.32% ± 0.13%, which was comparable to N3 (6.94% ± 0.12%) in the same device configuration. In contrast, the dendrimer with twelve surface groups, 5, had an efficiency of 3.69% ± 0.19%. Complex 2 and all three dendrimers have the same core chromophore, which absorbs more light than N3. The decrease in efficiency with increasing molecular volume was therefore determined to be due to less dye being adsorbed. Hence molecular volume and molar extinction coefficient are both first order parameters in achieving high conversion efficiencies and must be taken into account when designing new dyes for DSSCs.     

WCDMA 900MHz引入后GSM900减容降配及AMR半速率应用分析

主要是对WCDMA 900MHz区域内的GSM900网络减容降配进行研究。首先介绍了GSM900网络减容降配的背景,然后分析了GSM900网络减容降配的方案和流程,最后提出了中国联通GSM900网络减容降配的原则。     

火箭亚跨超声速气动特性数值研究

为研究不同攻角、马赫数下火箭的气动特性,采用有限体积法,对某型火箭在亚跨超声速来流条件下的流场进行了数值模拟,给出了阻力系数、升力系数、俯仰力矩系数、升阻比以及压力中心随攻角、马赫数的变化规律,结果表明:小攻角和大攻角条件下,阻力系数、升力系数、俯仰力矩系数和压力中心随攻角表现出不同的特性,且与马赫数也有很大关系;不同马赫数下,升阻比最大值基本在22°～26°攻角范围内取得。     

定容燃烧器法热损失影响因素研究

推导了定容燃烧器法工作过程中热损失计算公式,通过实验对影响定容燃烧器法热损失各因素进行定性分析和定量研究.详细研究了推进剂试样的升压速率、燃烧时间、点火方式、燃速等对热损失的影响.研究表明:热损失随着燃烧器内升压速率的增大而减少;随着推进剂的试样燃烧时间减短而减少;合适的点火方式可以减少热损失;推进剂试样的燃速越快则热...     

甲烷掺混氢气的燃烧特性试验研究

通过在定容燃烧室内研究不同的初始温度、初始压力、燃空当量比、掺氢比下甲烷-氢气-空气混合气的燃烧压力变化规律,得到了上述条件对混合气最大燃烧压力、最大压力升高率、火焰发展期、燃烧持续期以及最大燃烧压力循环变动的影响.研究结果表明:其他初始条件不变时,甲烷-氢气-空气混合气在高温低压时火焰传播的更快;随着甲烷中掺氢比增加...     

808nm波长锁定大功率半导体激光器列阵

大功率半导体激光器列阵(DLA)具有功率高、电光转换效率高、可靠性强、寿命长、体积小及成本低等诸多优点,但其波长随温度变化较大,光谱线宽较宽,这些缺点直接限制了其实际应用.为了解决此问题,采用体布拉格光栅(VBG)构成波长锁定大功率半导体激光器系统.体布拉格光栅可以把波长锁定,同时把光谱线宽压窄,从而有效改善了DLA波...     

轧机主传动快熔的作用、选型原则及失效对策

绝缘栅双极晶体管IGBT兼有功率三极管（GTR）和场效应管（MOSFET）的优点,在电子技术、电气传动、开关电源等场合有着广泛的应用。实际使用时,由于装置设计和应用时的意外原因,IGBT可能发生短路,急剧增大的集电极电流将造成器件永久性破坏。IGBT过电流的能力极差,快熔很难起到保护作用,因此现代IGBT模块内部一般都...