Iron–Nitrogen‐Doped Vertically Aligned Carbon Nanotube Electrocatalyst for the Oxygen Reduction Reaction

A highly active iron–nitrogen‐doped carbon nanotube catalyst for the oxygen reduction reaction (ORR) is produced by employing vertically aligned carbon nanotubes (VA‐CNT) with a high specific surface area and iron(II) phthalocyanine (FePc) molecules. Pyrolyzing the composite easily transforms the adsorbed FePc molecules into a large number of iron coordinated nitrogen functionalized nanographene (Fe–N–C) structures, which serve as ORR active sites on the individual VA‐CNT surfaces. The catalyst exhibits a high ORR activity, with onset and half‐wave potentials of 0.97 and 0.79 V, respectively, versus reversible hydrogen electrode, a high selectivity of above 3.92 electron transfer number, and a high electrochemical durability, with a 17 mV negative shift of E _1/2 after 10 000 cycles in an oxygen‐saturated 0.5 m H₂SO₄ solution. The catalyst demonstrates one of the highest ORR performances in previously reported any‐nanotube‐based catalysts in acid media. The excellent ORR performance can be attributed to the formation of a greater number of catalytically active Fe–N–C centers and their dense immobilization on individual tubes, in addition to more efficient mass transport due to the mesoporous nature of the VA‐CNTs.     

Interface Engineering and Controlling the Friction and Wear of Ultrathin Carbon Films: High sp3 Versus High sp2 Carbons

Understanding and engineering interfaces, and controlling the friction and wear of materials, are extremely important for many technological applications, particularly for magnetic storage technologies and micro‐ and nanoelectromechanical systems (MEMS and NEMS), where one sliding/moving surface comes into contact with another. Ultrathin carbon films are generally employed in most of these technologies. However, their wear and friction mechanisms are not well understood, especially the role of the film–substrate (FS) interface has not been deeply explored and discussed to date. This limits further developments in this field. Through experimental and theoretical experiments, we are able to report on the engineering of a FS interface consisting of high sp³‐ and high sp²‐bonded ultrathin carbon films on Al₂O₃–TiC substrates by introducing a silicon nitride (SiN_x) interlayer and tuning the carbon ion energy. All carbon‐based overcoats show a low coefficient of friction (COF) in the range of 0.08–0.16; however, the high sp³‐bonded C/SiN_x bilayer overcoat reveals the lowest and most stable friction. The friction mechanism is explained using an integrated framework of surface passivation, rehybridization, material transfer, tribolayer formation, and interfaces. We discover that FS interface engineering substantially reduces the wear of ultrathin carbon films while maintaining/reducing the friction. In general, this approach can be applied to control the friction and wear of ultrathin films of diverse materials.     

Synthesis of Millimeter‐Scale Transition Metal Dichalcogenides Single Crystals

The emergence of semiconducting transition metal dichalcogenide (TMD) atomic layers has opened up unprecedented opportunities in atomically thin electronics. Yet the scalable growth of TMD layers with large grain sizes and uniformity has remained very challenging. Here is reported a simple, scalable chemical vapor deposition approach for the growth of MoSe₂ layers is reported, in which the nucleation density can be reduced from 10⁵ to 25 nuclei cm^?2, leading to millimeter‐scale MoSe₂ single crystals as well as continuous macrocrystalline films with millimeter size grains. The selective growth of monolayers and multilayered MoSe₂ films with well‐defined stacking orientation can also be controlled via tuning the growth temperature. In addition, periodic defects, such as nanoscale triangular holes, can be engineered into these layers by controlling the growth conditions. The low density of grain boundaries in the films results in high average mobilities, around ≈42 cm² V^?1 s^?1, for back‐gated MoSe₂ transistors. This generic synthesis approach is also demonstrated for other TMD layers such as millimeter‐scale WSe₂ single crystals.     

Effects of AsH3 surface treatment for the improvement of ultra-shallow area-selective regrown GaAs sidewall tunnel junction

Low-temperature (290°C) area-selective regrowth by molecular layer epitaxy (MLE) was applied for the fabrication of an ultra-shallow sidewall (50 nm) GaAs tunnel junction. Fabricated tunnel junctions have shown a record peak current density up to 35,000 A/cm². It is shown that the tunnel junction characteristics are strongly dependent on the sidewall orientation and the AsH₃ surface treatment conditions just prior to regrowth. The effects of AsH₃ surface treatment are discussed in view of the control of surface stoichiometry.     

低应力PECVD SiC晶圆级薄膜封装新技术

为了解决MEMS封装过程中易对微致动件造成损伤的问题,提出了一种低成本、与CMOS工艺兼容的晶圆级薄膜封装技术,用等离子体增强化学气相淀积(PECVD)法制备的低应力SiC作为封装和密封材料。此材料的杨氏模量为460 GPa,残余应力为65 MPa,可使MEMS器件悬浮时封装部位不变形。与GaAs,Si半导体材料相比,SiC具有较佳的物理稳定性,较高的杨氏模量等性能优势。将PECVD薄膜封装技术用于表面微结构和绝缘膜上Si(SOI)微结构部件(如射频开关、微加速度计等)封装中,不仅减小了封装尺寸,降低了芯片厚度,简化了封装工艺,而且封装芯片还与CMOS工艺兼容。较之晶圆键合封装方式,此晶圆级薄膜封装成本可降低5%左右。     

Thermal stability of Hfl'aON films prepared by physical vapor deposition

We investigate the thermal stability of HfTaON films prepared by physical vapor deposition using high resolution transmission electronic microscope (HRTEM) and X-ray photoelectron spectroscopy (XPS). The results indicate that the magnetron-sputtered HtTaON films on Si substrate are not stable during the post-deposition an-healing (PDA). HfTaON will react with Si and form the interfacial layer at the interface between HfTaON and Si substrate. Hf-N bonds are not stale at high temperature and easily replaced by oxygen, resulting in significant loss of nitrogen from the bulk film. SiO2 buffer layer introduction at the interface of HfTaON and Si substrate may effec-tively suppress their reaction and control the formation of thicker interfacial layer. But SiO2 is a low k gate dielectric and too thicker SiO2 buffer layer will increase the gate dielectric's equivalent oxide thickness. SiON prepared by oxidation of N-implanted Si substrate has thinner physical thickness than SiO2 and is helpful to reduce the gate dielectric's equivalent oxide thickness.     

一款数字功率放大器的设计

设计了一款基于DDX 功率驱动技术、既具有USB数字音频接口又具有模拟音频接口的数字音频功率放大器UPA001。DDX 技术的引入使UPA001具有极高的效率和极低的失真。数字音频接口和数字处理技术的引入,使音频信号的传输和处理过程不会产生附加的失真和噪声。模拟音频接口和模拟处理技术的引入,使具有模拟音频输出接口的设备可以直接使用UPA001。     

Optimizing the Optoelectronic Properties of Face-On Oriented Poly(3,4-Ethylenedioxythiophene) via Water-Assisted Oxidative Chemical Vapor Deposition

Engineering the texture and nanostructure to improve the electrical conductivity of semicrystalline conjugated polymers must address the rate-limiting step for charge carrier transport. In highly face-on orientation, the charge transport between chains within a crystallite becomes rate-limiting, which is highly sensitive to the π–π stacking distance and interchain charge transfer integral. Here, face-on oriented semicrystalline poly(3,4-ethylenedioxythiophene) (PEDOT) thin films are grown via water-assisted (W-A) oxidative chemical vapor deposition (oCVD). Combining W-A with the volatile oxidant, antimony pentachloride, yields an optimized electrical conductivity of 7520  ±  240 S cm⁻¹, a record for PEDOT thin films. Systematic control of π–π stacking distance from 3.50 Å down to 3.43 Å yields an electrical conductivity enhancement of ≈ 1140%. The highest electrical conductivity also corresponds to minimum in Urbach energy of 205 meV, indicating superior morphological order. The figure of merit for transparent conductors, σ_dc/σ_op, reaches a maximum value of 94, which is 1.9 × and 6.7 × higher than oCVD PEDOT grown without W-A and utilizing vanadium oxytrichloride and iron chloride oxidizing agents, respectively. The W-A oCVD is single-step all-dry process and provides conformal coverage, allowing direct growth on mechanical flexible, rough, and structured surfaces without the need for complex and costly transfer steps.     

Heterogeneous Bimetallic Mo-NiPx/NiSy as a Highly Efficient Electrocatalyst for Robust Overall Water Splitting

Highly efficient electrocatalysts composed of earth-abundant elements are desired for water-splitting to produce clean and renewable chemical fuel. Herein, a heteroatomic-doped multi-phase Mo-doped nickel phosphide/nickel sulfide (Mo-NiP_x/NiS_y) nanowire electrocatalyst is designed by a successive phosphorization and sulfuration method for boosting overall water splitting (both oxygen and hydrogen evolution reactions (HER)) in alkaline solution. As expected, the Mo-NiP_x/NiS_y electrode possesses low overpotentials both at low and high current densities in HER, while the Mo-NiP_x/NiS_y heterostructure exhibits high active performance with ultra-low overpotentials of 137, 182, and 250 mV at the current density of 10, 100, and 400 mA cm⁻² in 1 m KOH solution, respectively, in oxygen evolution reaction. In particular, the as-prepared Mo-NiP_x/NiS_y electrodes exhibit remarkable full water splitting performance at both low and high current densities of 10, 100, and 400 mA cm⁻² with 1.42, 1.70, and 2.36 V, respectively, which is comparable to commercial electrolysis.     

EA-HFCVD 沉积纳米金刚石膜的光致发光分析

采用电子辅助-热丝化学气相沉积法(EA-HFCVD)在硅片上沉积出晶粒尺寸为30nm的均匀金刚石膜。生长过程中,预先加6A偏流生长1h,然后在0.8kPa条件下,无偏流生长3h。光致发光谱中存在4个发光中心分别位于1.682eV,1,564eV,1,518eV和1.512eV的发光峰。1.682eV处发光峰源于衬底硅原子掺杂于膜中引起的缺陷;其他发光峰源于金刚石晶格振动声子。光致发光强度越大对应的缺陷密度越大,从而降低了场发射域值电场强度,其关键可能源于金刚石膜电导型晶界。