基于体全息技术的WDM器件

利用体全息技术制作波分复用器件是一种新方法。本文介绍了此种方法的基本原理和器件的基本性能，并报道了国外对该项技术的研究进展。     

基于光热敏折变玻璃的反射式体布拉格光栅

为了稳定高功率半导体激光器的输出波长并且压缩 其光谱带宽,通常采用反射式体布拉格光栅(VBG)作为反射镜来构造外腔半导体激光器。V BG是利用激光全息技术,在一种特殊的感光玻璃上制作的周期性调制折射率结构。采用传统 的高温熔融-淬火工艺设计并制备了一种新型的光热敏折变(PTR)玻璃。测定了PTR玻璃的 玻璃转变温度和软化温度。在400 nm波长以上,获得了高达 91%的透过率。通过紫外全息曝光和两步热处理工艺成功实现了NaF纳米晶在PT R玻璃中的析出。在PTR玻璃上记录了布拉格波长为975.80 nm的反射 式VBG,并将其用于高功率半导体激光器(LD)的波长锁定。利用衍射效率为13.97%的反射式VBG,可实现半导体激光器输出波长准确地锁定在975.80 nm。输出线宽被有效压缩到0.4 nm以下。在相同的水冷 温度下,不同输入电流(2A→10 A)实现了仅仅0.06 nm的红移。在输入功率为10.2 W时,单管LD的最大输出功率 为9.7 W。     

光散射聚合物导光板的模拟分析

导光板是液晶显示器背光照明系统的核心组件,导光板的质量优劣直接影响到液晶显示器的显示效果、厚度、使用寿命及成本。文章建立了新型体散射聚合物导光板的数学模型,并应用米散射理论和蒙特卡罗方法对此类导光板进行了模拟分析,研究了掺杂粒子种类、密度、粒径、相对折射率、导光板尺寸等因素对导光板出光效果的影响规律,筛选出了合适的导光板基质和掺杂粒子材料,为实验制作体散射聚合物导光板提供了可靠依据。     

真三维立体显示静态成像技术研究

简述了二维立体显示的现状,分析了真三维立体显示静态成像技术的基本原理和成像空间材料选取的依据,给出了真三维立体显示系统的控制模型,最后以人体心脏为例实现了真三维立体显示静态成像的模拟,并列举了它在各领域中的应用。     

IRA码在体全息存储系统中的应用研究

在全息存储系统中,噪声分布是不均匀的,为了对存储的信息位进行不等保护,文中采用能纠不均匀错误的IRA码为系统的纠错码。通过高斯估计方法设计出适合全息存储系统的IRA码,并对其在系统中的应用进行了仿真,结果表明全息信道中IRA码的性能要远优于RS码。     

The Bipolar Field-Effect Transistor: ⅩⅢ. Physical Realizations of the Transistor and Circuits (One-Two-MOS-Gates on Thin-Thick Pure-Impure Base)

This paper reports the physical realization of the Bipolar Field-Effect Transistor (BiFET) and its one-transistor basic building block circuits. Examples are given for the one and two MOS gates on thin and thick, pure and impure base, with electron and hole contacts, and the corresponding theoretical current-voltage characteristics previously computed by us, without generation-recombination-trapping-tunneling of electrons and holes. These ex-amples include the one-MOS-gate on semi-infinite thick impure base transistor (the bulk transistor) and the impure-thin-base Silicon-on-Insulator (SOI) transistor and the two-MOS-gates on thin base transistors (the FinFET and the Thin Film Transistor TFT). Figures are given with the cross-section views containing the electron and hole concen-tration and current density distributions and trajectories and the corresponding DC current-voltage characteristics.     

基于VTK的体绘制系统实现

可视化是在信息化进程中发展起来的一个全新领域,VTK是一个功能强大的可视化工具包。体绘制技术作为可视化最活跃的领域之一,其算法不断得到改进和完善。简要介绍VTK的功能和应用,描述几种不同的绘制算法,并在此基础上用TCL语言实现一个简单的基于VTK的体绘制系统,给出具体设计实现过程。该系统实现体绘制技术中4种不同的算法,为VTK工具包更好地应用于可视化领域提供了实践基础。     

Performance analysis of SiGe double-gate N-MOSFET

The major purpose of this paper is to find an alternative configuration that not only minimizes the limitations of single-gate (SG) MOSFETs but also provides the better replacement for future technology. In this paper, the electrical characteristics of SiGe double-gate N-MOSFET are demonstrated and compared with electrical characteristics of Si double-gate N-MOSFET. Furthermore, in this paper the electrical characteristics of Si double-gate N-MOSFET are demonstrated and compared with electrical characteristics of Si single-gate N-MOSFET. The simulations are carried out for the device at different operational voltages using Cogenda Visual TCAD tool. Moreover, we have designed its structure and studied both I_d-V_g characteristics for different voltages namely 0.05, 0.1, 0.5, 0.8, 1 and 1.5 V and I_d-V_d characteristics for different voltages namely 0.1, 0.5, 1 and 1.5 V at work functions 4.5, 4.6 and 4.8 eV for this structure. The performance parameters investigated in this paper are threshold voltage, DIBL, subthreshold slope, GIDL, volume inversion and MMCR.     

Ruthenium complex-cored dendrimers: Shedding light on efficiency trade-offs in dye-sensitised solar cells

A series of first generation dendrimers provide important insight into the performance of dye-sensitised solar cells (DSSCs). The dendrimers are comprised of a substituted [cis-di(thiocyanato)-bis(2,2′-bipyridyl)ruthenium(II) complex, first generation biphenyl-based dendrons, and either four, eight, or twelve 2-ethylhexyloxy surface groups. The dendrimers were bound to the titanium dioxide of the DSSCs via carboxylate groups on one of the bipyridyl moieties in a similar manner to the ‘gold standard’ [cis-di(thiocyanato)-bis(4,4′-dicarboxylate-2,2′-bipyridyl)]ruthenium(II) 1 (N3). Exchanging one pair of the carboxylate groups on one bipyridyl ligand of N3 with styryl units to give [cis-di(thiocyanato)-(4,4′-dicarboxylate-2,2′-bipyridyl)-(4,4′-distyryl-2,2′-bipyridyl]ruthenium(II) 2 resulted in an improvement in device performance (7.19% ± 0.11% for 2 versus 6.94% ± 0.12% for N3). Devices containing the dendrimers also had good efficiencies but the performance was found to decrease with the increasing number of surface groups, which gives rise to an increase in the molecular volume of the dye. The device containing the dendrimer with four surface groups, 3, had a global efficiency of 6.32% ± 0.13%, which was comparable to N3 (6.94% ± 0.12%) in the same device configuration. In contrast, the dendrimer with twelve surface groups, 5, had an efficiency of 3.69% ± 0.19%. Complex 2 and all three dendrimers have the same core chromophore, which absorbs more light than N3. The decrease in efficiency with increasing molecular volume was therefore determined to be due to less dye being adsorbed. Hence molecular volume and molar extinction coefficient are both first order parameters in achieving high conversion efficiencies and must be taken into account when designing new dyes for DSSCs.     

WCDMA 900MHz引入后GSM900减容降配及AMR半速率应用分析

主要是对WCDMA 900MHz区域内的GSM900网络减容降配进行研究。首先介绍了GSM900网络减容降配的背景,然后分析了GSM900网络减容降配的方案和流程,最后提出了中国联通GSM900网络减容降配的原则。