应用长短期记忆循环神经网络的弱反射信号增强方法

由于沉积环境的特殊性和复杂性,地下介质中不同反射界面的波阻抗差可能差异巨大。如果储层的有效反射信息较弱,在地震数据中极可能被强反射信息掩盖,不易被识别,影响了储层识别效果,因此亟需一种解释性处理技术突出弱反射信息。常规方法一般是先从地震数据中分离出强反射分量,再将它削弱或删除。但如果地震子波提取不准确,减去法中强反射残留会引入虚假信号。文中提出了一种“升弱降强”的新思路,通过构建幂次反射系数映射模型缩小弱反射信号与强反射信号的相对差异。首先计算测井反射系数的幂次反射系数,将弱反射系数相对增大、强反射系数相对减小,得到拟反射系数序列;再用原始反射系数序列和拟反射系数序列分别与地震子波进行褶积运算,得到合成地震记录和拟合成地震记录,生成训练样本集;然后用该样本集训练长短期记忆(LSTM)循环神经网络,建立合成地震记录与拟合成地震记录的映射关系;最后将该网络应用于地震数据,增强了地震弱反射信号。模型和实际数据应用结果表明,该方法能有效增强地层本身引起的弱反射信号,提高地震数据的储层识别能力。     

渤海莱州湾凹陷中部古近系沙三段烃源岩地球化学特征及沉积环境

通过对渤海海域莱州湾凹陷中部古近系沙三段烃源岩样品的热解、TOC、饱和烃GC/MS分析以及主、微量元素分析,研究了其烃源岩的地球化学特征及沉积环境。研究结果表明：(1)莱州湾凹陷中部古近系沙三段烃源岩有机质丰度差异较大,总体为好—优质烃源岩,有机质类型以Ⅰ—Ⅱ型为主,整体处于低熟—成熟阶段;(2)通过Pr/nC₁₇-Ph/nC₁₈图版、C₂₄四环萜烷/C₂₆三环萜烷(C₂₄TeT/C₂₆TT)、C₂₇/C₂₉规则甾烷、奥利烷指数等参数判断沙三段烃源岩有机质来源为低等水生生物和高等植物的混源输入;(3)综合CIA,Sr/Ba,Pr/Ph,V/(V+Ni),U/Th值和伽马蜡烷指数等分析了烃源岩形成时期的古环境,认为沙三段沉积时期气候温暖湿润,降水丰富,水体为淡水—微咸水,陆源输入较多,具有较高的初始生产力,沉积时期整体表现为贫氧的弱氧化弱还原环境,沙三下段—沙三上段沉积环境整体变化不大,古气候和古水体盐度基本保持不...     

Process optimization of a deep trench isolation structure for high voltage SOI devices

In this work, the process reasons for weak point formation of the deep trench on SOI wafer have been analyzed in detail. The optimized trench process is also proposed. It is found that there are two main reasons: one is over-etching laterally of silicon on the surface of buried oxide caused by fringe effect; the other is slowly growth rate of isolation oxide in the concave silicon corner of trench bottom. In order to improve the isolation performance of deep trench, two feasible ways for optimizing trench process are proposed. The improved process thickens the isolation oxide and rounds sharp silicon corner at weak point, increasing the applied voltage by 15-20V at the same leakage current. The proposed new trench isolation process has been verified in foundry’s 0.5-μm HV SOI technology.     

高准确度数字式时频域实时频率测量系统

针对弱信号条件下的频率精确测量问题,提出了一种新的时域和频域相结合的算法,实现了一种数字式实时高准确度频率测量系统。搭建了系统测试平台,测试结果表明,测量时间为1 024个采样点、归一化频率为05条件下,信噪比10 dB情况下相对均方根准确度约为1.2×10-5,信噪比0 dB条件下相对均方根准确度约为77×10－5。在较高信噪比、10万点测量时间下相对均方根准确度可达71×10－11。     

Process optimization of a deep trench isolation structure for high voltage SOI devices

The process reasons for weak point formation of the deep trench on SOI wafers have been analyzed in detail.An optimized trench process is also proposed.It is found that there are two main reasons:one is over-etching laterally of the silicon on the surface of the buried oxide caused by a fringe effect;and the other is the slow growth rate of the isolation oxide in the concave silicon corner of the trench bottom.In order to improve the isolation performance of the deep trench,two feasible ways for optimizi...     

基于小波变换微弱生命信号提取的研究

利用小波变换研究微弱生命信号提取问题,简要介绍Mallat算法,采用小波阈值去噪法对强噪声背景下微弱生命信号进行去噪研究,并简要介绍阈值的估计方法,通过实例,利用MATLAB仿真验证小波变换在微弱生命信号的提取中可取得良好的效果。     

高电源抑制比的CMOS亚阈值多输出电压基准

基于工作在亚阈值区的MOS器件,运用CMOS电流模基准对CATA和PTAT电流求和的思想．提出一种具有低温漂系数、高电源抑制比（PSRR）的CMOS电压基准源,该电路可同时提供多个输出基准电压,且输出电压可调。该基准源基于CSMC0．5μm标准CMOS工艺,充分利用预调节电路并改进电流模基准核心电路。使整个电路的电源抑制比在低频时达到122dB,温度系数（TC）在0-100℃的温度范围内约7ppm／℃。     

Surface leakage current analysis of ion implanted ZnS-passivated n-on-p HgCdTe diodes in weak inversion

Effects of fixed charge on R₀A value of ZnS-passivated x=0.3 HgCdTe n-on-p diode are explained as a shunt resistance that affects current-voltage (I-V) and dynamic resistance-voltage (Rd-V) characteristics. The fixed charge of 1×10¹¹/cm² to 2 × 10¹¹/cm² which is usually obtained with ZnS passivation makes the surface weakly inverted and reduces HgCdTe diode R₀A value owing to the short generation lifetime of HgCdTe substrate. The gate-controlled diode and specially fabricated diode are used to explain the surface leakage current in the weak inversion and charge sheet model is used to explain the characteristics. It is found that the surface leakage current by the inverted channel in the weak inversion can reduce R₀A more than other currents such as the generation current and tunneling current which are usually used to explain the surface leakage current of HgCdTe diode.     

基于伪随机序列的聚合物光纤微弱光信号检测

提出了一种利用FPGA发出的伪随机序列检测微弱光信号的方法。用伪随机序列调制LED或LD光源,注入测量光纤,输出光信号经过光电转换后与伪随机序列的调制信号做相关检测。由于伪随机序列具有与白噪声相近的相关特性,测量过程中的干扰、噪声对相关峰值影响很小。因此,可以检测到微弱的输出光信号,提高了测量精度。测量系统由LabVIEW虚拟仪器实现。     

基于伪随机序列的微弱光信号检测

 提出了一种测量微弱光信号的方法,用伪随机序列调制光源,调制后的光信号注入测量系统,输出光信号经过光电转换后与伪随机序列进行相关检测,由于伪随机序列具有与白噪声类似的相关特性,测量过程中的干扰和噪声对相关函数峰值影响甚小,相关检测显著提高了输出信号的信噪比,可以检测到微弱的光信号.文中理论分析了伪随机序列相关检测性能,并给出了实验测量结果.理论和实验结果都证明这种方法用于微弱光信号测量系统,在较强噪声背景下(信噪比-15dB),可以提高信噪比约30dB,有效地提高了测量精度.