基于Duffing振子的微弱信号混沌检测

分析了Duffing振子的混沌特性,给出了确定系统混沌阈值的Melnikov方法.在阐述了基于相平面变化进行微弱信号检测原理后,在混沌检测中噪声对系统状态的影响也进行了研究.仿真结果表明,Duffing振子对与参考信号频率差较小的周期信号敏感,对白噪声和频差较大的周期干扰信号具有免疫力,该振子应用于实际微弱信号的检测具有可行性.     

温8区块复合深部调驱体系的制备与评价

针对温米油田温8区块油藏地质条件,采用水驱流向改变剂／弱凝胶复合深部调驱技术。选用粒径为3～5mm水驱流向改变剂2^#用于复合调驱体系;并研制了适合该油藏条件的弱凝胶体系,确定了其最佳配方：聚合物HPAM浓度1000～1500mg／L,交联剂FO浓度300mg／L,交联剂GR20mg／L,稳定剂WD浓度100mg／L,除氧剂CY浓度100mg／L。通过岩心流动实验,评价水驱流向改变剂／弱凝胶复合深部调驱体系对吸水剖面的改善能力。结果表明,该复合调驱体系可大幅提高吸水剖面改善率,适用于温8区块的调驱作业。     

污水复合深部调驱技术的室内研究

针对胜利渤南十区高温、高矿化度油藏地层条件,研制出利用油田污水配制的预交联颗粒／水驱流向改变剂／聚合物弱凝胶复合深部调驱体系。确定了弱凝胶体系最佳配方：HPAM浓度为1200—1800mg／L,交联剂浓度为300—600mg／L;该弱凝胶体系粘度保留率高,老化稳定性好。在油田污水中,水驱流向改变剂和预交联颗粒均具有良好的吸水膨胀性,在90℃下、104d内具有较好的老化稳定性。     

基于循环谱理论的弱信号检测及特征参数估计

研究了循环平稳信号的基本特性,通过分析通信系统中典型信号的循环平稳特性,得到了循环平稳的特征参数循环频率和信号特征参数的关系。在此基础上研究了该理论在通信领域的具体应用,提出了应用谱相关理论完成弱信号检测及信号特征参数（信号载频、码元速率）的估计方案,仿真实验结果表明,在-17dB的条件下能够进行信号的无误检测,可在-10dB条件下进行特征参数的无误估计。     

Process optimization of a deep trench isolation structure for high voltage SOI devices

In this work, the process reasons for weak point formation of the deep trench on SOI wafer have been analyzed in detail. The optimized trench process is also proposed. It is found that there are two main reasons: one is over-etching laterally of silicon on the surface of buried oxide caused by fringe effect; the other is slowly growth rate of isolation oxide in the concave silicon corner of trench bottom. In order to improve the isolation performance of deep trench, two feasible ways for optimizing trench process are proposed. The improved process thickens the isolation oxide and rounds sharp silicon corner at weak point, increasing the applied voltage by 15-20V at the same leakage current. The proposed new trench isolation process has been verified in foundry’s 0.5-μm HV SOI technology.     

基于小波变换微弱生命信号提取的研究

利用小波变换研究微弱生命信号提取问题,简要介绍Mallat算法,采用小波阈值去噪法对强噪声背景下微弱生命信号进行去噪研究,并简要介绍阈值的估计方法,通过实例,利用MATLAB仿真验证小波变换在微弱生命信号的提取中可取得良好的效果。     

高电源抑制比的CMOS亚阈值多输出电压基准

基于工作在亚阈值区的MOS器件,运用CMOS电流模基准对CATA和PTAT电流求和的思想．提出一种具有低温漂系数、高电源抑制比（PSRR）的CMOS电压基准源,该电路可同时提供多个输出基准电压,且输出电压可调。该基准源基于CSMC0．5μm标准CMOS工艺,充分利用预调节电路并改进电流模基准核心电路。使整个电路的电源抑制比在低频时达到122dB,温度系数（TC）在0-100℃的温度范围内约7ppm／℃。     

Surface leakage current analysis of ion implanted ZnS-passivated n-on-p HgCdTe diodes in weak inversion

Effects of fixed charge on R₀A value of ZnS-passivated x=0.3 HgCdTe n-on-p diode are explained as a shunt resistance that affects current-voltage (I-V) and dynamic resistance-voltage (Rd-V) characteristics. The fixed charge of 1×10¹¹/cm² to 2 × 10¹¹/cm² which is usually obtained with ZnS passivation makes the surface weakly inverted and reduces HgCdTe diode R₀A value owing to the short generation lifetime of HgCdTe substrate. The gate-controlled diode and specially fabricated diode are used to explain the surface leakage current in the weak inversion and charge sheet model is used to explain the characteristics. It is found that the surface leakage current by the inverted channel in the weak inversion can reduce R₀A more than other currents such as the generation current and tunneling current which are usually used to explain the surface leakage current of HgCdTe diode.     

管道清管器电磁跟踪定位系统接收机的设计与实现

介绍了清管器电磁跟踪定位的基本原理。提出了清管器电磁跟踪定位系统接收机的总体方案。研制了低噪声、窄通频带、高精度数据采集电路,实现了微弱磁信号的准确检测。实测表明,所设计的清管器电磁跟踪定位系统接收机,有效跟踪范围可达10米,可以满足油气管道工程实际需求。     

AD855x系列在微弱信号检测中的应用

分析一般的前置放大器存在的问题及传统的解决办法，详细说明了AD855x系列的性能优点及其在微弱信号检测中的应用。通过实例说明在应力传感系统中使用AD855x系列的显著优点。