Flux confinement by artificial arrays and clusters in superconducting films

We have studied the superconducting properties of antidot arrays and mesoscopic antidot clusters near the superconducting-normal phase boundary. Characteristic minima and maxima have been observed in the magnetore-sistance, critical current and phase boundary caused by the formation of stable vortex configurations at the antidots. A comparison with a simple theoretical model has shown that the effects in the arrays as well as in the clusters originate from quantization of the fluxoid at the antidots. This model has enabled an identification of all vortex configurations.     

Computer-aided band gap engineering and experimental verification of amorphous silicon–germanium solar cells

A new band gap profile (exponential profile) for the active layer of the a-SiGe:H single junction cell has been designed and experimentally demonstrated. By computer simulations we show how bending the grading of the band gap in the i-layer contributes to the enhancement of the carrier collection, improving the fill factor and efficiency. The differences observed between experiments and simulations are studied using Rutherford Backscattering Spectrometry (RBS). The results highlight weak points during the deposition process, whose control enables us to bring together experimental and computational results.     

氧化铝模板法制备Ge纳米线

采用氧化铝模板法结合具有高真空背景的低压化学气相沉积技术制备出 Ge纳米线 .在氧化铝模板的背面喷金作为催化剂 ,合成了 Ge纳米线 .采用原子力显微镜、X射线衍射、透射电镜、能量散射谱等手段对 Ge纳米线进行了分析 .Ge纳米线的直径约为 30 nm,长度超过 6 0 0 nm.对 Ge纳米线的生长机理进行了探讨 .     

pnp型SiGe HBT的制备研究

从pnp型Si/SiGe HBT的能带结构出发，阐述pnp型Si/SiGe HBT的较大原理，采用MBE方法生长Si/Si1-xGex合金材料，并对Si/Si1-xGex合金材料的物理特性和异质结特性进行表征，在重庆固体电子研究所工艺线上，研制出了pnp型Si/SiGe HBT器件，器件参数为：Vcb0=9V,Vcc0=2.5V,Veb0=5V,β＝10。     

光纤激光器的研究与发展

介绍光纤激光器的工作原理、分类以及为消除激射过程中的许多不利因素，提高光束质量而采取的技术措施，同时介绍近几年同内外光纤激光器的研究与发展。     

Dual-band infrared detectors made on high-quality HgCdTe epilayers grown by molecular beam epitaxy on CdZnTe or CdTe/Ge substrates

In this paper, we present all the successive steps for realizing dual-band infrared detectors operating in the mid-wavelength infrared (MWIR) band. High crystalline quality HgCdTe multilayer stacks have been grown by molecular beam epitaxy (MBE) on CdZnTe and CdTe/Ge substrates. Material characterization in the light of high-resolution x-ray diffraction (HRXRD) results and dislocation density measurements are exposed in detail. These characterizations show some striking differences between structures grown on the two kinds of substrates. Device processing and readout circuit for 128×128 focal-plane array (FPA) fabrication are described. The electro-optical characteristics of the devices show that devices grown on Ge match those grown on CdZnTe substrates in terms of responsivity, noise measurements, and operability.     

^68Ge—^68Ga发生器的研制—硅胶柱上^68Ge与Ga,Cu,Zn的分离

测量了硫酸介质中Ｇｅ在硅胶上的分配比及Ｇａ、Ｃｕ、Ｚｎ在硅胶上的吸附。研究了硫酸浓度、Ｇａ浓度及原始溶液中Ｇｅ载体量对Ｇｅ分配比的影响。实验结果表明：用１０ｍｍ×３０ｍｍ硅胶柱，上柱料液为５０ｍＬ０．４μｇ／ｍＬＧｅ－０．２８ｍｏｌ／ＬＧａ－９ｍｏｌ／ＬＨ２ＳＯ４溶液，淋洗液为３０ｍＬ９ｍｏｌ／ＬＨ２ＳＯ４，流速为０．８５ｍＬ／ｃｍ２·ｍｉｎ时，Ｇｅ的穿透率为０．３９％，Ｇａ、Ｃｕ、Ｚｎ的去污系数分别为１．８×１０６、５．０×１０６、２．６×１０６。     

Deposition,post-deposition annealing,and characterization of epitaxial Ge films grown on Si(100) by pyrolysis of GeH4

As a first step towards developing heterostructures such as GaAs/Ge/Si entirely by chemical vapor deposition, Ge films have been deposited on (100) Si by the pyrolysis of GeH₄. The best films are grown at 700° C and are planar and specular, with RBS minimum channeling yields of ≈4.0% (near the theoretical value) and defect densities of 1.3 x 10⁸ cm⁻². Variations of in-situ cleaning conditions, which affect the nature of the Si substrate surface, greatly affect the ability to get good epitaxial growth at 700° C. The majority of the defects found in the Ge films are extrinsic stacking faults, formed by dissociation of misfit and thermal expansion accommodation dislocations. The stacking fault density is not significantly reduced by post-deposition annealing, as is the case for the dislocations observed in MBE Ge films. It is suggested that lowering the CVD growth temperature through the use of high vacuum deposition equipment would result in dislocation defects like those of MBE films which could then be annealed more effectively than stacking faults. Films with defect densities equivalent to MBE Ge films (~2 x 10⁷ cm⁻²) could then probably be produced.     

LaNiO3 and Cu3Ge contacts to YBa2Cu3O7-x films

Metallization of high-T_c superconductors using low resistivity metal oxides and Cu-Ge alloys has been investigated on high quality pulsed laser deposited epitaxial YBa₂Cu₃O_7-x (YBCO) films. Epitaxial LaNiO₃ (LNO) thin films have been grown on YBCO films at 700°C using pulsed laser deposition. The specific resistivity of LNO was measured to be 50 μΩ-cm at 300K which decreases to 19 μΩ-cm at 100K indicating good metallicity of the LNO films. The contact resistance of LNO-YBCO thin film interface was found to be reasonably low (of the order of 10^-4Ω-cm² at 77K) which suggests that the interface formed between the two films is quite clean and LNO can emerge as a promising metal electrode-material to YBCO films. A preliminary investigation related to the compatibility of Cu₃Ge alloy as a contact metallization material to YBCO films is discussed. The usage of other oxide based low resistivity materials such as SrRuO₃ (SRO) and SrVO₃ (SVO) for metallization of high-T_c YBCO superconductor films is also discussed.     

Growth of large crystals of (Pb,Ge)Te and (Pb,Sn)Te

Large single crystals of Pb1-xGexTe (0 < × < 0.105) up to 10 g and Pb1-ySnyTe (0 < y < 0.26) up to 125 g were grown in sealed tubes by self-transport onto oriented single crystal seeds. The crystals were free of voids and inclusions, had dislocation densities as low as 103 cm-2, and were uniform in composition. Pertinent details of the growth technique, including thermal conditions, stoichiometry of the source, and seed orientation, are described. Results of evaluation of the crystals by metallography, Laue X-ray topography, and electron microprobe analysis are presented.