微量Ge对Sn-0.7Cu高温钎焊界面组织的影响

测试了Sn-0.7Cu和Sn-0.7Cu-0.012Ge钎料在不同钎焊温度下的润湿性,研究了Ge元素对老化过程中钎焊界面金属间化合物(IMC)层生长速率的影响。结果表明:2种钎料的润湿性相差不大,但添加了Ge元素的Sn-0.7Cu-0.012Ge钎料在不同钎焊温度下的漫流性得到了明显的改善,相应提高了约4.00%~5.00%;250℃和350℃钎焊温度下,Sn-0.7Cu/Cu钎焊界面IMC在150℃的老化条件下的生长速率分别为3.24×10-18m2/s和2.50×10-17m2/s,Sn-0.7Cu-0.012Ge/Cu钎焊界面IMC的生长速率分别为2.66×10-18m2/s和1.48×10-17m2/s。Ge元素在钎焊界面处富集,提高了界面IMC的致密性,阻碍了原子的扩散,在一定程度上抑制了界面IMC层的粗化与增厚。     

FRACTURE TOUGHNESS OF ORDERED INTERMETALLIC COMPOUNDS FROM SMALL DISKSHAPED SPECIMENS

１　ＩＮＴＲＯＤＵＣＴＩＯＮＣｏｎｖｅｎｔｉｏｎａｌｅｘｐｅｒｉｍｅｎｔａｌｍｅｔｈｏｄｓ,ｓｕｃｈａｓｔｈｅｄｏｕｂｌｅｃａｎｔｉｌｅｖｅｒｂｅａｍ,ｔｈｅｓｉｎｇｌｅｅｄｇｅｎｏｔｃｈｅｄｂｅａｍａｎｄｄｏｕｂｌｅｔｏｒｓｉｏｎｔｅｓｔｓ［１］,ｆｏｒｍｅａｓｕｒｉｎｇｔｈｅｆｒａｃｔｕｒｅｔｏｕｇｈｎｅｓｓｏｆｂｒｉｔｔｌｅａｎｄｓｅｍｉｂｒｉｔｔｌｅｍａｔｅｒｉａｌｓｐｒｏｄｕｃｅｒｅｌｉａｂｌｅｒｅｓｕｌｔｓ,ｂｕｔａｒｅｆａｉｒｌｙｍａｔｅｒｉａｌｓｉｎｔｅｎｓｉｖｅｂｅｃａｕｓ…     

有序合金中FCC→HCP相变温度内出现的缺陷

利用ＴＥＭ的高温台原位观察了Ｆｅ３Ｇｅ的相在７８０℃（在７００℃以上Ｌ１２转变为ＤＯ１９）出现缺陷的过程。实验发现首先形核的是外禀层错,外禀层错比孤立的内禀层比孤立的内禀层错扩展得快,并且扩展得较宽,它们有可能长大成为ＤＯ１９相的核胚。     

High-efficiency InGaP/In0.01Ga0.99As tandem solar cells lattice-matched to Ge substrates

Conversion efficiency (AM1.5G) of more than 30% was achieved by adding a small quantity of Indium into a GaAs bottom cell in the conventional tandem solar cell on Ge substrate. It was found that the lattice-mismatch between GaAs and Ge caused misfit-dislocations in thick GaAs layers and reduced an open-circuit voltage (V_oc) of the cell. An In_0.49Ga_0.51P/In_0.01Ga_0.99As tandem cell lattice-matched to Ge showed a great improvement in efficiency, which was attributed to an increase in the V_oc of the bottom cell and increases in the photocurrents both in the top and bottom cells due to reductions in band-gap energy.     

稀土化合物RE2Ge2In(RE=Ce,Pr,Nd)的磁性和晶场效应

基于晶场理论和分子场理论,采用点电荷晶场模型,通过模拟Zaremba小组的磁化率实验结果,得到了稀土化合物RE2Ge2In(RE=Ce,Pr,Nd)的晶场分裂能和相应波函数。计算表明,Kramer离子Ce3 和Nd3 在晶场效应的作用下简并部分消除得到了双基态,而非Kramer离子Pr3 分裂后得到了单基态。计算得到的Ce2Ge2In的第一激发能和总分裂能与Adroja小组中子散射实验结果吻合较好。     

硅/锗量子点空间分布的有序性及其制备技术

随着纳米技术的进步,量子点纳米材料在理论和实验研究方面受到越来越多的关注.由于量子点阵列优异的物理性能与其空间分布的有序性十分相关,空间分布有序量子点阵列的大面积重复性制备已成为高性能纳米光电子器件商业化应用的关键.近几十年来,在量子点空间排列分布有序性的提高、缺陷态的减少、成核位置可控以及大面积重复制备方面人们已做了大量研究.本文主要讨论和综述当前在制备空间分布有序硅/锗(Si/Fe)量子点方面的技术工艺和成果,并展望其未来技术发展思路和方向,希望为今后进一步探索研究大面积空间分布有序Si/Ge量子点阵列的制备提供信息参考.     

低磁场条件下Mn5(Ge3-xSbx)(x=0、0.1、0.2、3)合金磁热效应研究

用真空高频悬浮炉在高纯氩气保护下制备了Mn5（Ge3-xSbx）（x=0、0.1、0.2、3）合金系列样品,用直接测量方法测定了在永磁体提供的低磁场（H=1.3T）条件下样品的磁热效应曲线（ΔTad-T）,结果表明,用元素Sb替代Mn5Ge3合金中的Ge原子,不能增强合金的磁热效应,但对合金的居里温度有一定影响.     

Orientation control of epitaxial Ge thin films growth on SrTiO3 (100) by ultrahigh vacuum sputtering

We report the orientation control of crystalline Ge (111) and Ge (001) growth on SrTiO₃ (100) substrate by adjusting the temperature of substrate. It is found that the substrate temperature plays an important role for the formation of crystalline Ge with different surface orientations and interfacial chemical configuration during the sputtering process. At 500 °C, Ge (111) with good crystalline quality is formed, while Ge (001) is preferably grown on SrTiO₃ substrate at 650 °C. Our results show the possibility of manipulating the surface orientations during Ge growth on SrTiO₃ by controlling the substrate temperatures.     

Laser ablation and growth of Si and Ge

In this work, we investigated the laser ablation and deposition of Si and Ge at room temperature in vacuum by employing nanosecond lasers of 248 nm, 355 nm, 532 nm and 1064 nm. Time-integrated optical emission spectra were obtained for neutrals and ionized Ge and Si species in the plasma at laser fluences from 0.5 to 11 J/cm². The deposited films were characterized by using Raman spectroscopy, scanning electron microscopy and atomic force microscopy. Amorphous Si and Ge films, micron-sized crystalline droplets and nano-sized particles were deposited. The results suggested that ionized species in the plasma promote the process of subsurface implantation for both Si and Ge films while large droplets were produced from the superheated and melted layer of the target. The dependence of the properties of the materials on laser wavelength and fluence were discussed.     

巨大晶胞化合物Ho117Fe52Ge112的结构磁性能研究

利用X射线衍射技术和振动样品磁强计（VSM）研究了巨大晶胞三元化合物Ho117Fe52Ge112的结构与磁性能,测定了外加磁场为0．5T时该化合物的磁矩随温度的变化关系。该化合物具有Tb117Fe52Ge112结构类型,空间群为Fm3m（No．225）点阵参数为a=2．80832（8）nm。在90K到室温的范围内,Ho117Fe52Ge112的磁化率与温度关系服从居里——外斯定律,每个化学式有效磁矩的实验值为ueff=111．25us。测定了室温（300K）时磁矩随外加磁场的变化关系。当外加磁场到2．1T时,该化合物的磁矩约为3．61emu／g,还没有达到饱和状态。