GaAs/Ge solar cell AC parameters under illumination

The ac parameters of GaAs/Ge solar cell were measured under illumination at different cell temperatures using impedance spectroscopy technique. They are compared with the dark measurements. It is found that the cell capacitance is higher and cell resistance is lower under illumination than in dark for all cell terminal voltages. The cell capacitances at the corresponding maximum power point voltage (terminal) do not vary with temperature where as the cell resistance decreases. The cell capacitance under illumination is estimated from the dark cell capacitance and it is in good agreement with the measured illumination data.     

两级聚光光伏系统中砷化镓电池特性的实验研究

针对一般聚光系统中光斑不均匀而导致电池性能下降的问题,设计并搭建了具有二级聚光器的碟式聚光光伏发电系统,介绍了系统的结构及工作原理,进行了户外实验。在相同聚光比条件下(150X),与单级聚光系统相比,三结砷化镓光伏电池的平均峰值功率为1.515 W/cm2,平均效率为29.29%,平均峰值功率和平均效率分别提高了23.32%和9.12%。     

Positive Effect of Ge Vacancies on Facilitating Band Convergence and Suppressing Bipolar Transport in GeTe‐Based Alloys for High Thermoelectric Performance

Because the intrinsic Ge vacancies in GeTe usually lead to high hole concentration beyond the optimal range, many previous studies tend to consider Ge vacancies as negative effects on increasing the figure of merit ZT of GeTe‐based alloys, and consequently have proposed various approaches to suppress Ge vacancies. However, in this work, it is demonstrated that the Ge vacancies can have great positive effects on enhancing the ZT of GeTe‐based alloys when the hole concentration falls into the optimal range. First, hole concentration of GeTe is reduced close to the optimal range by co‐alloying of Pb and Bi, and then the Ge vacancies are increased by adding excess Te into the Ge_0.8Pb_0.1Bi_0.1Te_1+x. The Ge vacancies can cause lattice shrinkage and promote rhombohedral‐to‐cubic phase transition. As revealed by first‐principle calculations, theoretical simulations, and experimental tests, Ge vacancies can facilitate the band convergence, suppress the bipolar transport at higher temperature range, and reduce the lattice thermal conductivity. Combining these effects, a peak ZT of 1.92 at 637 K and an average ZT of 1.34 within 300–773 K in Ge_0.8Pb_0.1Bi_0.1Te_1.06 can be obtained, demonstrating the great significance of utilizing vacancy‐type defects for enhancing ZT.     

辉光放电质谱仪测定超纯锗中23种痕量杂质元素

本文报导了一种用辉光放电质谱仪VG9000在无标准样品的情况下对超纯半导体材料锗中23种痕量杂质元素的直接而快速的定量测定方法。该方法具有10ppt量级的检测极限，是鉴定起统金属或半导体材料纯度（8N）的理想手段。     

Ge nano-layer fabricated by high-fluence low-energy ion implantation

A Ge nano-layer embedded in the surface layer of an amorphous SiO₂ film was fabricated by high-fluence low-energy ion implantation. The component, phase, nano-structure and luminescence properties of the nano-layer were studied by means of Rutherford backscattering, glancing incident X-ray diffraction, laser Raman scattering, transmission electron microscopy and photoluminescence. The relation between nano-particle characteristics and ion fluence was also studied. The results indicate that nano-crystalline Ge and nano-amorphous Ge particles coexist in the nano-layer and the ratio of nano-crystalline Ge to nano-particle Ge increases with increasing ion fluence. The intensity of photoluminescence from the nano-layer increases with increasing ion fluence also. Prepared with certain ion fluences, high-density nano-layers composed of uniform-sized nano-particles can be observed.     

Uranium Dioxide from Uranyl Nitrate-Tri-n-Butyl Phosphate Solution

Uranium in uranyl nitrate-TBP solution was converted into dioxide by vacuum distillation and ignition. In vacuum distillation, TBP and its diluent were recovered at 40°–150°C in nitrogen stream under 1–5mmHg. The residue of distillation was incinerated in nitrogen stream with 0.1～1.OmmHg by raising the temperature from 400° to 1,300°C. The final product is a black powder of UO₂, identified by X-ray diffraction, by density measurement and by chemical analyses. Uranyl nitrate TBP solution is evolved during fuel reprocessing, and thus the vacuum distillation reported here could be applied to the solution in order to simplify the process.     

Characterisation of size-controlled and red luminescent Ge nanocrystals in multilayered superlattice structure

Ge nanocrystals (Ge NCs) embedded in a multilayered superlattice structure have been fabricated and investigated. The presence of Ge NCs was confirmed by Raman scattering and X-ray diffraction measurements. The average size of Ge NCs was modulated by the sputtering time of Ge-rich layer and possible mechanisms have been proposed. The blue shift of optical absorption edge was observed with the decrease of nanocrystal size. The photoluminescence showed broad bands centred at ∼ 1.77 eV and ∼ 2.01 eV for 3.9 nm and 3.0 nm nanocrystals, respectively, which are consistent with the theoretical calculation in literature. The properties of shifted optical absorption and red luminescence are tentatively explained by quantum confinement in the Ge NCs.     

锗 -二氧化硅复合薄膜的光电特性(英文)

采用射频共溅射技术在石英玻璃和硅片衬底上制备出Ge SiO2 复合薄膜 ,然后在真空气氛中进行热处理。利拉曼散射、X射线衍射、UV/VIS/NIR透射和反射谱、变温电导测试等手段对薄膜的光、电特性进行了研究。实验结果表明 ,用热处理的方法可以在薄膜中形成Ge纳米颗粒 ,Ge纳米颗粒的平均尺度约 5 .0nm时 ,薄膜的光学带宽约 1.42ev ,电导激活能的最小值约 0 .43ev。     

Determination of hydrogen concentration in a-Si and a-Ge layers by elastic recoil detection analysis

In this work we have studied the individual a-Si and a-Ge hydrogenated layers prepared by RF sputtering on Si (100) substrates using Ar and H₂ gas mixture. The absolute value of atomic content of the H was determined by Elastic Recoil Detection Analysis (ERDA) with 1.6 MeV 4He⁺ beam. The dynamics of the out diffusion was investigated by annealing in high purity (99.999%) argon atmosphere at 350 °C for several hours. It was clearly shown that hydrogen can diffuse out faster from Ge film than from the Si one during annealing of the samples.     

电感耦合等离子体质谱法测定铅锌矿中镓铟锗铊

稀散元素是铅锌矿石中重要的伴生元素,为了综合利用铅锌矿资源,在地质、选矿上经常要考查稀散元素镓、锗、铟、铊的含量。研究了利用电感耦合等离子体质谱法测定铅锌矿中镓、铟、锗、铊4种稀散元素,选取了最佳仪器分析条件,通过在线加入内标校正基体效应和接口效应,检出限分别为0.02μg·g-1、0.01μg·g-1、0.03μg·g-1和0.05μg·g-1,相对标准偏差(RSD)为0.85%~2.84%,回收率在93.3%~102.3%之间,明显优于其他分析方法。该方法样品前处理简便、快捷,测定结果准确,令人满意。