氮化硼包覆碳化硅纤维表面CVD法生长碳纳米管研究

目的 通过调节化学气相沉积(CVD)的工艺参数,实现碳纳米管(CNTs)在氮化硼(BN)包覆的碳化硅纤维(SiCf)表面的可控生长.方法 通过控制单一变量,采用扫描电子显微镜、热重分析、X射线光电子能谱等表征手段,系统地研究了CVD工艺参数和BN表面改性对CNTs形貌、长度、含量的影响.结果 通过改变CVD工艺参数,实现了对CNTs形貌、长度、含量的调节与控制,获得了CNTs和BN协同改性的SiC纤维(SiC@BN-CNTs).其中,SiC@BN-OH在反应温度为700℃、反应时间为20 min等参数下具有最大的CNTs产率(质量分数为10.6％),且形貌良好、含量较高.结论 浸渍催化剂和缩短碳源与载体的距离对生长CNTs有积极影响,增加了CNTs的长度和生长密度;通过调节反应温度和时间能够实现对CNTs长度、含量的精确控制,从而获得高质量、高结晶度的CNTs;在反应器中,气体和催化剂的含量相互影响,在制备过程中需要考虑气体和催化剂的比例,按比例同时增加气体和催化剂的流入速率能够获得更好的结果.BN表面羟基化改性处理增强了BN对催化剂的吸附,促进了催化剂颗粒的分散,提高了CNTs的产率.     

精密喷射成形用的可加工锆英石/氮化硼底模

为使喷射成型沉积坯底部有模具钢的表面形貌,需要制备上表面有翻制形貌的陶瓷底模.采用硅溶胶预包覆处理的锆英石/氮化硼粉为原料,以硅溶胶为粘结剂,经100 MPa湿压成型、800℃煅烧3 h后,制备了锆英石/氮化硼陶瓷底模.结果表明:底模具有很好的抗热震性和对高钒钢的高温抗侵蚀性;线收缩率为2.5%(1400℃,3 h),...     

Effects of h-BN content on properties of Ni-Cr/h-BN composite

Ni-Cr/h-BN self-lubricating composities were prepared by powder metallurgy (P/M) method. The effects of hexagonal boron nitride (h-BN) content on the mechanical and tribological properties of the Ni-Cr/h-BN composites were investigated. The corresponding frictional models were established to analyze the formation of the lubricant h-BN films on the surfaces of the Ni-Cr/h-BN composites. The results show that, when the content of h-BN increases from 5% to 15% (mass fraction), the bending strength of the Ni-Cr/h-BN composite decreases from 96.670 MPa to 17.319 MPa, and the hardness (HB) decreases from 33 to 14. The friction coefficient of the Ni-Cr/h-BN composite decreases firstly from 0.385 to 0.216, and then increases to 0.284, while the wear rate decreases firstly from 4.14×10⁻⁹ kg/(N·m) to 1.35×10⁻⁹ kg/(N·m), then increases to 2.36×10⁻⁹ kg/(N·m). The best comprehensive mechanical and tribological properties can be obtained between 10% and 12% h-BN addition.     

Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy

X-ray photoelectron spectroscopy has been used to measure the valence band offset (VBO) of the w-InN/h-BN heterojunction. We find that it is a type-II heterojunction with the VBO being −0.30 ± 0.09 eV and the corresponding conduction band offset (CBO) being 4.99 ± 0.09 eV. The accurate determination of VBO and CBO is important for designing the w-InN/h-BN-based electronic devices.     

h-BN各向异性热膨胀和热输运特性的第一性原理研究

热填料的热膨胀系数和热导率是设计热管理和热防护复合材料的关键参考因素.六方氮化硼(h-BN)由于其独特的优点是最常用的热填料之一.但由于不同测试方法和测试样品的不一致性,其热膨胀系数和热导率的精确数值尚不清楚.本文分别用基于密度泛函理论的准谐近似方法和声子玻耳兹曼输运方程理论精确计算了h-BN沿层间和层内方向的热膨胀系...     

Chemical vapor deposition of boron- and nitrogen-containing graphene thin films

Boron and nitrogen-incorporated graphene thin films were grown on polycrystalline Ni substrates by thermal chemical vapor deposition using separate boron- and nitrogen-containing feedstocks. Boron and nitrogen atoms were incorporated in the film in almost equal amounts and the total content reached ∼28%. The film predominantly consisted of separate graphene and boron nitride domains. Carrier concentration in the graphene domains was estimated to be about 1 × 10⁻³ e/atom (3.8 × 10¹² cm⁻²) from G band shift in Raman spectra.     

稀释剂对燃烧合成h-BN陶瓷性能的影响

通过燃烧合成结合热等静压的方法,在100MPa氮气压力下制备了h-BN陶瓷,理论计算了稀释剂h-BN的质量分数对反应的燃烧模式和燃烧温度的影响,通过实验分析了陶瓷的力学性能和稀释剂质量分数的关系,随着稀释剂质量分数的增加,产物的相对密度、抗弯强度和断裂韧性先升高然后有所降低,在稀释剂质量分数为67％处有最大值,其分别为1.41g/cm~3、41MPa和1.28MPa·m~(1/2),通过XRD分析了产物的相组成,SEM断口显微照片发现,h-BN呈层片状分布,其断裂方式为沿晶断裂。