全文获取类型
收费全文 | 433163篇 |
免费 | 79588篇 |
国内免费 | 23177篇 |
专业分类
电工技术 | 40003篇 |
技术理论 | 1篇 |
综合类 | 46421篇 |
化学工业 | 55071篇 |
金属工艺 | 30845篇 |
机械仪表 | 31968篇 |
建筑科学 | 34023篇 |
矿业工程 | 19943篇 |
能源动力 | 12741篇 |
轻工业 | 48970篇 |
水利工程 | 14435篇 |
石油天然气 | 17549篇 |
武器工业 | 6325篇 |
无线电 | 48031篇 |
一般工业技术 | 38044篇 |
冶金工业 | 19213篇 |
原子能技术 | 7495篇 |
自动化技术 | 64850篇 |
出版年
2025年 | 1512篇 |
2024年 | 10279篇 |
2023年 | 9504篇 |
2022年 | 17825篇 |
2021年 | 22627篇 |
2020年 | 16854篇 |
2019年 | 11887篇 |
2018年 | 12115篇 |
2017年 | 14175篇 |
2016年 | 12823篇 |
2015年 | 19857篇 |
2014年 | 24622篇 |
2013年 | 29095篇 |
2012年 | 35563篇 |
2011年 | 37481篇 |
2010年 | 35153篇 |
2009年 | 33608篇 |
2008年 | 34688篇 |
2007年 | 33694篇 |
2006年 | 29220篇 |
2005年 | 24161篇 |
2004年 | 17017篇 |
2003年 | 11547篇 |
2002年 | 10595篇 |
2001年 | 9415篇 |
2000年 | 7668篇 |
1999年 | 3716篇 |
1998年 | 1590篇 |
1997年 | 1348篇 |
1996年 | 1187篇 |
1995年 | 923篇 |
1994年 | 738篇 |
1993年 | 610篇 |
1992年 | 494篇 |
1991年 | 388篇 |
1990年 | 352篇 |
1989年 | 314篇 |
1988年 | 218篇 |
1987年 | 160篇 |
1986年 | 127篇 |
1985年 | 70篇 |
1984年 | 68篇 |
1983年 | 52篇 |
1982年 | 67篇 |
1981年 | 77篇 |
1980年 | 121篇 |
1979年 | 75篇 |
1978年 | 10篇 |
1959年 | 76篇 |
1951年 | 97篇 |
排序方式: 共有10000条查询结果,搜索用时 15 毫秒
1.
对己二腈工业反应器提出了两釜串联带回流的模型,通过模拟计算得出模型的级间返混系数 f=6的结论。该模型能较好地预测工业反应器中物料组分浓度变化和气、液两相的流动特性;指出了现工业反应器的鼓泡中和段体积偏小是造成己二酸浓度偏高的关键;提出了可以通过增加串连一个鼓泡预反应段的改造方案,能有效地降低己二酸的浓度,从7%降至4%左右,从而能较好地减缓腐蚀和结焦。 相似文献
2.
This article deals with the kinetics of two-step anionic polymerization by way of a non-steady state method. Several molecular parameters can be evaluated using the formulae developed. A bimodal molecular weight distribution function for the resulting polymer is derived from the set of kinetic differential equations, which is in agreement with the experimental data reported. 相似文献
3.
Rapeseed protein concentrate (RC), prepared with 2% hexameta-phosphate, was tested for its functionality and performance in some foods. The RC had good nitrogen solubility, fat absorption, emulsification, and whipping capacities but poor water absorption and gelling properties. It increased the emulsion stability, and protein but lowered the fat content of wieners. It also increased the cooking yield, reduced the shrinkage and tenderized meat patties. Results were similar to soybean isolate except for the poorer color and flavor. The cooking yield of RC supplemented wieners was less than the all-meat control and soybean-supplemented wieners. A 9% RC dispersion mixed with an equal volume of eggwhite produced a meringue of comparable stability and texture to that of eggwhite alone. 相似文献
4.
5.
Ultraviolet (UV) disinfection is becoming increasingly popular as an alternative disinfection technology to chlorination in recent years. In this study, we investigated the photoreactivation of Escherichia coli following medium-pressure (MP) UV disinfection of synthetic water by a bench-scale collimated beam apparatus. The UV doses ranged from 1.6 -19.7 mWs/cm2 and photoreactivation was investigated for 6 hours under fluorescent light. In addition, chloramination was applied after UV disinfection to investigate its ability to control photoreactivation. It was found that photoreactivation occurred for all UV doses tested and the increase in bacteria numbers ranged from 0.04 to 1.35 log10. However, the degree of photoreactivation decreased with increased UV doses. Chloramination experiments revealed that the addition of 0.5 mg/l of monochloramine resulted in suppression of photoreactivation for 1 hour only. An increased monochloramine dose of 1 mg/l was found to prevent photoreactivation for the entire duration of the experiment. The results of this study have shown that photoreactivation occurs even after MP UV disinfection, although it is of a lesser extent at higher UV doses. This study has also established that secondary chloramination can effectively suppress and eliminate photoreactivation with a chloramine dose of 1 mg/l. 相似文献
6.
Feng M. Scherrer D. Kruse J. Apostolakis P.J. Middleton J.R. 《Electron Device Letters, IEEE》1995,16(4):139-141
We present experimental evidence that the noise figure (NF) and associated gain equal to those achieved with GaAs pseudomorphic high electron mobility transistors (GaAs p-HEMT's) can also be accomplished by ion implanted GaAs metal-semiconductor field-effect transistors (GaAs MESFET's). These measured noise figure results as a function of low temperature for GaAs MESFET's and p-HEMT's clearly suggest that the transport properties of the two-dimensional electron gas in HEMT's and p-HEMT's do not make a significant contribution to the noise reduction at high frequency operation of these devices 相似文献
7.
8.
Jyh-Ming Wang Sung-Chuan Fang Wu-Shiung Feng 《Solid-State Circuits, IEEE Journal of》1994,29(7):780-786
Two new methods are proposed to implement the exclusive-OR and exclusive-NOR functions on the transistor level. The first method uses non-complementary signal inputs and the least number of transistors. The other one improves the performance of the prior method but two more transistors are utilized. Both of them have been fully simulated by HSPICE on a SUN SPARC 2 workstation 相似文献
9.
It is demonstrated for the first time that long nanowires with radii as small as 30 nm can be manufactured with a conventional coupler fabrication rig. The temporal deterioration of nanowire optical properties has been studied and correlated with its mechanical behaviour. The original transmission properties have been restored by a post-fabrication treatment. 相似文献
10.
Ahmari D.A. Fresina M.T. Hartmann Q.J. Barlage D.W. Mares P.J. Feng M. Stillman G.E. 《Electron Device Letters, IEEE》1996,17(5):226-228
A self-aligned InGaP/GaAs heterojunction bipolar transistor with a compositionally graded InxGa1-xAs base has been demonstrated with fT=83 GHz and fmax=197 GHz. To our knowledge, these results are the highest reported for both parameters in InGaP/GaAs HBT's. The graded base, which improves electron transport through the base, results in a DC current gain and a cutoff frequency which are 100% and 20% higher, respectively, than that achieved by an identical device with a nongraded base. The high fmax results from a heavily doped base, self-aligned base contacts, and a self-aligned collector etch. These results demonstrate the applicability of InGaP/GaAs HBT's in high-speed microwave applications 相似文献