Kinetics of two-step anionic polymerization

This article deals with the kinetics of two-step anionic polymerization by way of a non-steady state method. Several molecular parameters can be evaluated using the formulae developed. A bimodal molecular weight distribution function for the resulting polymer is derived from the set of kinetic differential equations, which is in agreement with the experimental data reported.     

超薄SiO2层的热生长

隧道小孔中超薄ＳｉＯ２的生长是ＥＥＰＲＯＭ电路制造的关键工艺之一。采用ＳＵＰＲＥＭ－Ⅲ工艺模拟程序对超薄ＳｉＯ２的热生长进行了工艺模拟，经过大量的工艺实验及优化，确定了超薄ＳｉＯ２的最佳生长条件，生长出的ＳｉＯ２性能良好，完全可满足ＥＥＰＲＯＭ研制的要求。     

Integrated magnetic full wave converter with flexible output inductor

A new integrated magnetic full wave DC/DC power converter that provides flexible transformer design by incorporating an independent output inductor winding is introduced. The transformer is implemented on a traditional three-leg magnetic core. The inductor winding can be separately designed to control the output current ripple. The cross-sectional area of the inductor core leg can be reduced dramatically. The operation and performance of the proposed circuit are verified on a 100 W prototype converter.     

Programmable group-delay module using binary polarization switching

We demonstrate the first programmable group-delay module based on polarization switching. With a unique binary tuning mechanism, the device can generate any differential group delay value from -45 to +45 ps with a resolution of 1.40 ps, or any true-time-delay value from 0 to 45 ps with a resolution of 0.7 ps. The delay varying speeds for both applications are under 1 ms and can be as fast as 0.1 ms. We evaluate both the dynamic and static performances of the device while paying special attention to its dynamic figures of merit for polarization-mode dispersion emulation and compensation applications. Our experiment shows that the device exhibits a negligible transient-effect induced power penalty (<0.2 dB) in a 10-Gb/s nonreturn-to-zero system.     

89-GHz fT room-temperature silicon MOSFETs

The authors report the implementation of deep-submicrometer Si MOSFETs that at room temperature have a unity-current-gain cutoff frequency (f_T) of 89 GHz, for a drain-to-source bias of 1.5 V, a gate-to-source bias of 1 V, a gate oxide thickness of 40 Å, and a channel length of 0.15 μm. The fabrication procedure is mostly conventional, except for the e-beam defined gates. The speed performance is achieved through an intrinsic transit time of only 1.8 ps across the active device region     

Non-steady-state model for kinetics of free radical polymerization, 4. Direct thermal initiation

This paper deals with the non-steady-state kinetics of direct thermal initiated polymerization. The initiation is assumed to be a bimolecular reaction of the monomer. The relationship between the radical concentration and the monomer conversion is rigorously derived. In further treatment a few very close approximations are introduced based on the fact that the number of monomer molecules reacting in the initiation step is much less than that consumed in the propagation step for a process producing high polymer, and the value of the rate constant for propagation or chain transfer is much lower than that for chain termination. Expressions for various molecular parameters, such as molecular weight distribution, number-average and weight-average degrees of polymerization, and dispersity, are given. Several numerical examples are provided.     

Using thermally stimulated currents to find defective capacitors

BaTiO₃ multilayer capacitors with a nominal capacitance of 3.5nF have been carefully measured using the thermally stimulated current (TSC) technique. When a 300V polarization voltage is applied at room temperature, a new TSC peak appeared in defective sample A after it has been immersed in water. No new peak was found in good-quality sample B after a similar treatment. The accelerated life test shows that sample A hasa much shorter life than sample B in terms of insulation resistance.     

Periodic surface modeling for computer aided nano design

Current solid and surface modeling methods based on Euclidean geometry in traditional computer aided design are not efficient in constructing a large number of atoms and particles. In this paper, we propose a periodic surface model for computer aided nano design such that geometry of atoms and molecules can be constructed parametrically. At the molecular scale, periodicity of the model allows thousands of particles to be built efficiently. At the meso scale, inherent porosity of the model represents natural morphology of polymer and macromolecule. Surface and volume operations are defined to support crystal and molecular model creation with loci and foci periodic surfaces. The ultimate goal is to enable computer assisted material and system design at atomic, molecular, and meso scales.     

提高E^2PROM中NMOS管源漏穿通电压的实验研究

为了提高Ｅ＾２ＰＲＯＭ中Ｎ管源漏穿通电压，用实验的方法对制造工艺进行了研究。结果表明，高能量注入是提高ＶＰＴ的有效手段，但受到ｐｎ结击穿的限制，只适用于低区短沟Ｎ管；ＤＤＤ工艺大幅度高ＶＰＴ，但ｐｎ结击穿电压低于２０Ｖ，不能应用于高压ＭＯＳ管；采用适量的防穿通注入和适当增大沟道长度为最理想的工艺途径。     

介绍两种原皮防腐方法

本文简要地介绍了美国一家公司提供的原皮防腐方法。