A new Pd-oxide-Al/sub 0.3/Ga/sub 0.7/As MOS hydrogen sensor

A new and interesting Pd-oxide-Al/sub 0.3/Ga/sub 0.7/As MOS hydrogen sensor has been fabricated and studied. The steady-state and transient responses with different hydrogen concentrations has been measured at various temperatures. Based on the large Schottky barrier height and presence of oxide layer, the studied device exhibits a high hydrogen detection sensitivity and wide temperature operating regime. The studied device exhibits the low-leakage current and obvious current changes when exposed to hydrogen-contained gas. Even at room temperature, a very high hydrogen detection sensitivity of 155.9 is obtained when a 9090 ppm H/sub 2//air gas is introduced. Furthermore, when exposed to hydrogen-contained gas at 95/spl deg/C, both the forward and reverse currents are substantially increased with increased hydrogen concentration. In other words, the studied device can be used as a hydrogen sensor under the applied bidirectional bias. Under the applied voltage of 0.35 V and 9090 ppm H/sub 2//air hydrogen ambient, a fast adsorption response time about 10 s is found. The transient and steady-state characteristics of hydrogen adsorption are also investigated.     

L－B膜修饰电极循环伏安行为模拟──（Ⅰ）电荷转移速度常数对循环伏安性能的影响

本文用计算机数字模拟方法研究了电活性分子多层Ｚ型Ｌ－Ｂ膜修饰电极的循环伏安行为。计算了电极与修饰Ｌ－Ｂ膜分子第一层之间的电荷转移速度常数Ｋ_ｏ，Ｌ－Ｂ膜分子层间的电荷转移速度常数ｋ_ｉ；对峰电位差△Ｅ_ｐ及阳极峰面积Ｑ的影响，以及在不同条件下各层分子的氧化态分数随扫描时间的变化。为研究和设计电活性分子修饰电极的实际体系提供了大量数据和信息。     

新型实用布线算法──L─M算法

本文提出新型布线算法，集李氏迷宫法与线搜索法的长处为一体，以饱和带法进行动态排序，以线搜索法确定借孔位置，然后用李氏法进行单层布线，获得最佳路径，从而达到线型好，布通率高的效果。     

β″－Al_2O_3陶瓷的强化和韧化

研究了稳定ＺｒＯ＿２和部份稳定ＺｒＯ＿２对β″－Ａｌ＿２Ｏ＿３陶瓷的强化和韧化作用，观察了不同种类、不同含量的ＺｒＯ＿２对β″－Ａｌ＿２Ｏ＿３陶瓷的显微结构、力学性能和电导率的影响，探讨了β″－Ａｌ＿２Ｏ＿３的韧化机理。     

Determination of the width of the transition layer between the crystalline and amorphous zones in nylon 1010 by SAXS

The width of the transition layer between the crystalline and amorphous zones in nylon 1010 was determined by SAXS with point collimation and long-slit collimation, respectively. The width of the transition layer, E, was found to be 1.7 nm. The results show that the width of the transition layer is independent of crystallinity.     

Lamp configuration design for rapid thermal processing systems

We have studied lamp configuration design for rapid thermal processing (RTP) systems. We considered a configuration consisting of four concentric circular lamp zones, three of them above the wafer and one circumventing the wafer. We propose a method to determine the geometric parameters, the width, height and radius, of the lamp zones so that the configuration designed has the capacity to achieve a uniform temperature on the wafer. The method is based on a necessary and sufficient condition for uniform temperature tracking and analytic expressions of the view factors. A design example is given in which a least square open-loop control law yields good temperature uniformity     

Novel technique for SiO2 formed by liquid-phasedeposition for low-temperature processed polysilicon TFT

A technique for SiO₂ formation by liquid-phase deposition (LPD) at nearly room temperature for low-temperature processed (LTP) polysilicon thin-film transistor (poly-Si TFT) was developed. LPD SiO₂ film with a lower P-etch rate shows a dense structure. LPD SiO₂ also exhibits good electrical characteristics. LTP poly-Si thin-film transistors (TFTs) with LPD SiO ₂ as the gate insulator have been fabricated and investigated. Their characteristics indicate performance adequate for their use as pixel transistors in liquid crystal displays (LCDs)     

Enhancement of power system data debugging using GSA-based data-mining technique

In this paper, a gap-statistic-algorithm (GSA)-based data-mining technique is applied to enhance the data debugging in power system operations. In the proposed approach, the GSA technique is embedded into a neural network frame in anticipation of improving the detection capability of bad data. Thanks to the clustering capability exhibited by GSA in which the number of clusters can be optimally determined, the proposed approach becomes highly effective to localize the group of abnormal data. This proposed approach has been tested through the data collected from different scenarios made on an IEEE 30-bus system and 118-bus systems. Test results reveal the feasibility of the method for the data diagnosis applications.     

Modeling phosphorus in the upper Etowah River basin: identifying sources under uncertainty.

The Uniform Covering by Probabilistic Rejection (UCPR) algorithm was used, in conjunction with the Soil and Water Assessment Tool (SWAT) model, to identify P loads from point source and nonpoint source polluters in the upper Etowah River basin (UERB) in Georgia. The key findings of the research are as follows. The mean absolute error was preferred over the root mean square error as a search criterion for the UCPR algorithm when water quality observations are scarce. The undocumented P load from point sources in the UERB was consistently estimated as about 43 kg/d by the proposed method; but the method was not able to identify the broiler litter application rate to the poultry/beef operation pastures. Point sources (both documented and undocumented), poultry/beef operation pastures, and forests are the three major contributors of P. During 1992-1996, on average they accounted for 36.4, 31.7, and 17.2% of P load from the UERB, respectively.     

Programmable group-delay module using binary polarization switching

We demonstrate the first programmable group-delay module based on polarization switching. With a unique binary tuning mechanism, the device can generate any differential group delay value from -45 to +45 ps with a resolution of 1.40 ps, or any true-time-delay value from 0 to 45 ps with a resolution of 0.7 ps. The delay varying speeds for both applications are under 1 ms and can be as fast as 0.1 ms. We evaluate both the dynamic and static performances of the device while paying special attention to its dynamic figures of merit for polarization-mode dispersion emulation and compensation applications. Our experiment shows that the device exhibits a negligible transient-effect induced power penalty (<0.2 dB) in a 10-Gb/s nonreturn-to-zero system.