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1.
文中将心理学所提出的自我构念理论融入到了跨文化交际障碍成因的研究中,通过对跨文化交际案例的分析说明自我构念的不同会对跨文化交际产生影响.若对自我构念缺乏正确认识和理解则会产生消极影响,易形成自我中心论和盲目崇拜论的误区,最终导致跨文化交际障碍,引发交际冲突.  相似文献   
2.
从产业组织的角度看,我国钢铁产业在蓬勃快速发展的背后,其产业组织结构存在着严重的不合理状况,主要表现在产业集中度低,规模经济性差,进入壁垒低等方面,使得产业的市场绩效低下,其反作用又促使产业结构矛盾加剧。这种相互作用的结果,已成为影响我国钢铁产业持续健康发展的主要原因。因此,必须从市场和产业组织政策两方面着手加以解决。  相似文献   
3.
This paper addresses the issue of improving the performance of memory management for real-time Java applications, building upon the real-time specification for Java (RTSJ) from the Real-Time Java Expert Group. In a first step, a collecting dynamic memory solution including both a real-time garbage collector and region-based memory management, is proposed. A thorough analysis of the parameters influencing the performance of write barriers in memory management, together with ways of improvement are then presented. Finally, the implementation of a memory management solution compliant with the RTSJ and integrating the proposed improvements is sketched.  相似文献   
4.
Havelock’s type of expansion theorems, for an integrable function having a single discontinuity point in the domain where it is defined, are utilized to derive analytical solutions for the radiation or scattering of oblique water waves by a fully extended porous barrier in both the cases of finite and infinite depths of water in two-layer fluid with constant densities. Also, complete analytical solutions are obtained for the boundary-value problems dealing with the generation or scattering of axi-symmetric water waves by a system of permeable and impermeable co-axial cylinders. Various results concerning the generation and reflection of the axisymmetric surface or interfacial waves are derived in terms of Bessel functions. The resonance conditions within the trapped region are obtained in various cases. Further, expansions for multipole-line-source oblique-wave potentials are derived for both the cases of finite and infinite depth depending on the existence of the source point in a two-layered fluid.  相似文献   
5.
杨谟华 《电子学报》1993,21(11):39-43,30
本文基于理论分析和实验研究,分别在n^-/n^+/p^+外延和硅单晶基片上实现了1300V及1600V高压IGBT;并进而证实了获得高压IGBT相互联的关键技术──器件纵向横向几何结构及工作参数的准确计量优化,低缺陷密度高性能厚层硅材料的工艺生长技术,和复合高压终端结构的叠加组合形成。  相似文献   
6.
InAs/AlGaAsSb deep quantum well was successfully formed on GaAs substrate and examined for two electron devices, Hall elements (HEs), and field-effect transistors (FETs). With a thin buffer layer of 600 nm AIGaAsSb on GaAs substrate, we observed high electron mobility more than 23000 cm2/Vs and extrinsic effective electron velocity of 2.2 x 107 cm/s for a 15 nm thick InAs channel at room temperature. AIGaAsSb lattice matched to InAs was discussed from the view points of insulating property, carrier confinement, and oxidization rate. Reliability data good enough for practical use were also obtained for HEs. We demonstrated AIGaAsSb as a promising buffer/barrier layers for InAs channel devices on GaAs substrate, and we discussed the possible advantages of AIGaAsSb also for InGaAs FETs.  相似文献   
7.
A new design concept for diffusion barriers in high‐density memory capacitors is suggested, and both RuTiN (RTN) and RuTiO (RTO) films are proposed as sacrificial oxygen diffusion barriers. The newly developed RTN and RTO barriers show a much lower sheet resistance than various other barriers, including binary and ternary nitrides (reported by others), up to 800 °C, without a large increase in the resistance. For both the Pt/RTN/TiSix/n++poly‐plug/n+ channel layer/Si and the Pt/RTO/RTN/TiSix/n++poly‐plug/n+ channel layer/Si contact structures, contact resistance—the most important electrical parameter for the diffusion barrier in the bottom electrode structure of capacitors—was found to be as low as 5 kohm, even after annealing up to 750 °C. When the RTN film was inserted as a glue layer between the bottom Pt electrode layer and the TiN barrier film in the chemical vapor deposited (Ba,Sr)TiO3 (CVD–BST) simple stack‐type structure, the RTN glue layer was observed to be thermally stable to temperatures 150 °C higher than that to which the TiN glue layer is stable. Moreover, the capacitance of the physical vapor deposited (PVD)–BST simple stack‐type structure adopted TiN glue layer initially degraded after annealing at 500 °C, and, thereafter, completely failed. In the case of the RTN and RTO/RTN glue layers, however, the capacitance continuously increased up to 550 °C. Thus, the new RTN and RTO films, which act as diffusion barriers to oxygen, are very promising materials for achieving high‐density capacitors.  相似文献   
8.
Integration of Cu with low k dielectrics provided solution to reduce both resistance-capacitance time delay and parasitic capacitance of BEOL interconnections for 130 nm and beyond technology node. The motivation of this work is to study and improve electrical and reliability performance of two-level Cu/CVD low k SiOCH metallization from the results of diffusion barrier deposition schemes. Barrier deposition schemes are (a) high-density-plasma 250 Å Ta; (b) surface treatment of forming gas followed by high-density-plasma 250 Å Ta and (c) bi-layer of 100 Å Ta(N)/150 Å Ta. In this work, we demonstrated the superior and competency of high-density-plasma Ta deposition for Cu/CVD low k metallization and achieved excellent electrical and reliability results. Wafers fabricated with high-density-plasma Ta barrier scheme resulted in the best electrical yields, >90% for testing vehicles of dense via chains (via size=200 nm) and interspersed comb structures (width/space=200 nm/200 nm). Dielectric breakdown strength of the interspersed comb structures obtained at electric field of 0.3 MV/cm was ∼4 MV/cm.  相似文献   
9.
利用电子束刻蚀和真空蒸镀法,在单要氧化锌纳米带和SiO2/Si片上,制备了金纳米电极,采用四端法对氧化锌带的电流-电压(I-V)特性进行测量。实验发展氧化锌纳米带/金电极组成的体系存在三种完全不同的I-V特性曲线,分别为对应于较淖电阻的非对称阀值型曲线以及电阻较大的整流型和线性对称曲线,我们认为这主要是由于氧化锌纳米带和电极的接触情况不同所造成的。测量表明器件在不同环境下(空气和真空)具有不同的I-V特性,表面在当测量环境由空气变为真空时,前一类的I-V特性变化不大,而后一类由整流型变为线性对称型。  相似文献   
10.
With the miniaturization of ULSI circuits and the associated increase of current density up to several MA/cm2, copper interconnects are facing electromigration issues at the top interface with the dielectric capping layer SiC(N). A promising solution is to insert selectively on top of copper lines a CoWP metallic self-aligned encapsulation layer, deposited using a wet electroless process. We study the impact of this process on electrical line insulation as a function of cap thickness at the 65 nm technology node and we investigate the physical origin of leakage currents. Below a critical thickness, only a slight leakage current increase of less than one decade is observed, remaining within the specification for self-aligned capping layer processes. Above this critical thickness, large leakage currents are generated due to the combined effect of lateral growth and the presence of parasitic redeposited nodules. We show that a simple phenomenological model allows to reproduce the experimental data, to assess quantitatively the contribution of parasitic defects, and to predict that the self-aligned barrier technology should be extendible up to the 32 nm node, provided that a thin cap layer of less than 8 nm is used.  相似文献   
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