基于极端学习机的MANET移动性预测模型

针对移动自组织网络移动性在管理无线网络带宽资源可用性方面的重要性,为了更好地规划连续服务可用性和有效能源管理以提升网络的整体服务质量,提出了一种基于极端学习机的MANET移动性预测模型。利用ELM对MANET中的任意节点进行建模;假设已知每个移动节点当前的移动性信息（位置、速度和运动方向角度）,以这种方式预测节点未来的位置和相邻节点之间未来的距离;基于几个标准移动性模型,产生更加真实、精确的移动性预测,从而更好地捕捉任意节点直角坐标系之间现有交互/相关性。使用标准移动性模型的仿真结果验证了所提模型的有效性,实验结果表明,提出的预测模型明显改进了传统基于多层感知器的模型,此外,当预测相邻节点之间未来距离时,避免了当前算法对预测精度的限制。     

A new extrinsic dc model for high speed lattice matched InAlAs/InGaAs/InP HEMT with a predicted 135 GHz cut-off frequency

Extrinsic lattice matched InAlAs/InGaAs/InP HEMT model, incorporating the parasitic source and drain resistance, for very high frequency application is developed. The current voltage characteristics and the transconductance have been evaluated and the influence of carrier concentration dependent mobility on frequency has also been analyzed. A cut-off frequency of 135 GHz is obtained.     

用户移动性建模及其应用

在移动通信中，移动性建模技术可以广泛用于移动性管理、无线资源管理、移动切换、话务分析等不同方面。文中首先提出移动性建模的基本假设，并建立一般的移动性模型；在此基础上，详细介绍几类不同的移动性模型，并给出移动性建模的具体应用。     

Electrophoretic mobilities of dissolved polyelectrolyte charging agent and suspended non-colloidal titanium during electrophoretic deposition

Coarse (≤20 μm) titanium particles were deposited on low-carbon steel substrates by cathodic electrophoretic deposition (EPD) with ethanol as suspension medium and poly(diallyldimethylammonium chloride) (PDADMAC) as polymeric charging agent. Preliminary data on the electrophoretic mobilities and electrical conductivities on the suspensions of these soft particles as well as the solutions themselves as a function of PDADMAC level were used as the basis for the investigation of the EPD parameters in terms of the deposition yield as a function of five experimental parameters: (a) PDADMAC addition level, (b) solids loading, (c) deposition time, (d) applied voltage, and (e) electrode separation. These data were supported by particle sizing by laser diffraction and deposit surface morphology by scanning electron microscopy (SEM). The preceding data demonstrated that Ti particles of ∼1-12 μm size, electrosterically modified by the PDADMAC charging agent, acted effectively as colloidal particles during EPD. Owing to the non-colloidal nature of the particles and the stabilization of the Ti particles by electrosteric forces, the relevance of the zeta potential is questionable, so the more fundamental parameter of electrophoretic mobility was used. A key finding from the present work is the importance of assessing the electrophoretic mobilities of both the suspensions and solutions since the latter, which normally is overlooked, plays a critical role in the ability to interpret the results meaningfully. Further, algebraic uncoupling of these data plus determination of the deposit yield as a function of charging agent addition allow discrimination between the three main mechanistic stages of the electrokinetics of the process, which are: (1) surface saturation; (2) compression of the diffuse layer, growth of polymer-rich layer, and/or competition between the mobility of Ti and PDADMAC; and (3) little or no decrease in electrophoretic mobility of Ti, establishment of polymer-rich layer, and/or dominance of the mobility of the PDADMAC over that of Ti.     

Performances of carbon nanotube field effect transistors with altered channel length

The influence of channel length on the performances of carbon nanotube field effect transistors(CNT-FETs) has been studied.Buffered oxide etching was used to remove approximately a 60 nm layer from the original 100 nm silicon dioxide layer,to thin the dielectric layer of the back gate.Channel length of the CNT-FETs was changed along with the etching process.The dependence of drain-source current on gate voltage was measured to analyze the performance of the CNT-FETs,including the transconductance,carrier mo...     

The effect of organometallic vapor phase epitaxial growth conditions on wurtzite GaN electron transport properties

The growth issues known to effect the quality of GaN organometallic vapor phase epitaxial films are reviewed and the best 300Kmobility vs electron concentration data are discussed. The data probably represent transport properties intrinsic to films grown on sapphire. From the results of Hall measurements, the unintentional donor in high quality GaN films cannot be Si since the donor ionization energy is much larger than that of films intentionally doped with Si (36 vs 26 meV). Electrical properties of a doped channel layer are shown not to be significantly different from those of thick films which implies a viable technology for conducting channel devices. It is argued that 77K Hall measurements are a useful indicator of GaN film quality and a compilation of unintentionally and Si doped data is presented. The 77K data imply that, at least over a limited range, Si-doping does not appreciably change the compensation of the GaN. The 77K data indicate that the low mobilities of films grown at low temperatures are probably not related to dopant impurities.     

Growth of tin-doped indium antimonide for magnetoresistors

Magnetoresistors made from n-type indium antimonide are of interest for magnetic position sensing applications. In this study, tin-doped indium antimonide was grown by the metalorganic chemical vapor deposition technique using trimethylindium, trisdimethylaminoantimony, and tetraethyltin in a hydrogen ambient. Using a growth temperature of 370°C and a pressure of 200 Torr, it was found that the electron density in tin-doped films varied from 3.3×10¹⁶ cm⁻³ to 4.0×10¹⁷ cm⁻³ as the 5/3 ratio was varied from 4.8 to 6.8. From secondary ion mass spectroscopy (SIMS) studies, it was found that this variation is not caused by a change in site occupancy of the tin atoms from antimony to indium lattice sites, but rather to a change in the total tin concentration incorporated into the films. This dependence of tin incorporation on stoichiometry could be used to rapidly vary the doping level during growth. Undoped films grown under similar conditions had electron densities of about 2×10¹⁶ cm⁻³ and electron mobilities near 50,000 cm²V⁻¹s⁻¹ at room temperature for films that were only 1.5 μm thick on a gallium arsenide substrate. Attempts to grow indium antimonide at 280°C resulted in p-type material caused by carbon incorporation. The carbon concentration as measured with SIMS increased rapidly with increasing growth rate, to above 10¹⁹ cm⁻³ at 0.25 μm/h. This is apparently caused by incomplete pyrolysis of a reactant at this low growth temperature. Growth at 420°C resulted in rough surface morphologies. Finally, it was demonstrated that films with excellent electron mobility and an optimized doping profile for magnetoresistors can be grown.     

泛在、移动互联网的体系结构

文章针对现有互联网由于原始设计模式方面的不足,难以满足泛在、移动用户的多元化网络服务需求的问题,创造性地提出全新的泛在、移动互联网体系理论与总体框架;创建一种。基础设施层。模型与理论,解决用户在任何地点、任何时间、以任何方式接入到互联网的问题;建立一种。普适服务层”模型与理论,实现对普适服务的支持;并提出新网络体系下的移动性管理机制。新的网络体系结构可克服现有互联网存在的弊端,有效满足泛在、移动方面的多元化网络服务需求。     

牙齿松动位移测量仪的研究

本文针对牙齿松动位移测量仪的研制,就其位移传感原理,信号处理以及相关的机械结构进行了理论分析,整机实验结果与临床试用表明,本测量仪的性能指标达到了临床应用的标准。     

Device fabrication on epitaxial Si-Ge alloys

PMOS transistors, p-n junctions and diffused resistors have been fabricated in Si-Ge alloy having a range of Ge content from 0 to 38%. The p-n junctions showed lower forward voltage drops than one would expect from simple band-gap lowering information. A Ge build-up at the surface may be causing this. MOS transistors exhibited low mobilities in the range of 20–50 cm²/V-s. The mobility value was affected by the surface condition and smoother surface areas resulted in the higher values of mobility. Diffused resistors had very high resistor values compared to control samples fabricated on silicon. Contact resistance problems were suspected but not proved to be the cause.