利用磁控溅射在GaN/蓝宝石衬底上生长ZnO薄膜

Zinc oxide (ZnO) thin films were grown on n-GaN/sapphire substrates by radio-frequency (RF) magnetron sputtering. The films were grown at substrate temperatures ranging from 400 to 700 ℃ for 1 h at a RF power of 80 W in pure Ar gas ambient. The effect of the substrate temperature on the structural and optical properties of these films was investigated by X-ray diffraction (XRD), atomic force microscopy (AFM) and photoluminescence (PL) spectra. XRD results indicated that ZnO films exhibited wurtzite symmetry and c-axis orientation when grown epitaxially on n-GaN/sapphire. The best crystalline quality of the ZnO film is obtained at a growth temperature of 600 ℃. AFM results indicate that the growth mode and degree of epitaxy strongly depend on the substrate temperature. In PL measurement, the intensity of ultraviolet emission increased initially with the rise of the substrate temperature, and then decreased with the temperature. The highest UV intensity is obtained for the film grown at 600 ℃ with best crystallization. oindent     

Design and optimization of a monolithic GaInP/GaInAs tandem solar cell

We have theoretically calculated the photovoltaic conversion efficiency of a monolithic dual-junction GaInP/GaInAs device,which can be experimentally fabricated on a binary GaAs substrate.By optimizing the bandgap combination of the considered structure,an improvement of conversion efficiency has been observed in comparison to the conventional GaInP_2/GaAs system.For the suggested bandgap combination 1.83 eV/1.335 eV,our calculation indicates that the attainable efficiency can be enhanced up to 40.45%(30...     

透明导电薄膜现状与发展趋势

在对透明导电薄膜的市场、产业、及技术现状综述的基础上,结合目前透明导电薄膜存在的问题对未来透明导电薄膜的发展趋势及研究方向及研究内容进行了论述。     

基于GaAs系高效叠层太阳能电池的聚光光伏系统技术

以GaAs系高效叠层太阳能电池的技术背景和特点为基础,介绍了基于GaAs系高效叠层太阳能电池的聚光光伏(CPV)系统的基本结构、工作原理以及技术现状,并对聚光光伏系统的发展前景进行了论述。     

石墨上多晶硅薄膜的制备及择优取向的调控

利用磁控溅射在石墨衬底上制备了非晶硅薄膜,并使用快速热退火对薄膜进行了晶化处理。XRD分析表明,直接溅射沉积在石墨衬底上的硅薄膜经过快速热退火后具有高度的(220)择优取向。通过在硅薄膜和石墨衬底界面处引入一定厚度的ZnO中间层,晶化后的多晶硅薄膜择优取向实现了从(220)向(400)的转变,从而非常有利于将成熟的制绒工艺应用于该材料体系的电池制备过程中。对于择优取向的转变提出了解释,认为Si(100)面和ZnO(001)面晶格匹配是主要原因。喇曼分析表明ZnO中间层的引入提高了多晶硅薄膜的晶体质量。     

铝诱导多晶硅薄膜籽晶层的电学性质

利用磁控溅射系统在玻璃衬底上制备出具有玻璃∕铝∕非晶硅的多层膜结构样品,然后在管式退火炉中以一定的温度退火,使非晶硅晶化形成多晶硅薄膜籽晶层。扫描电子显微镜(SEM)及光学显微镜测试表明,铝诱导结晶后样品中的铝层已被完全置换为连续并且厚度均匀的多晶硅层,多晶硅晶粒的平均尺寸为23μm。喇曼光谱测试和X射线衍射(XRD)分析表明,多晶硅薄膜籽晶层具有良好的结晶质量,并且具有高度的(111)择优取向。霍尔测试结果表明,铝诱导多晶硅薄膜籽晶层属于高浓度p型掺杂,掺杂浓度达到了1018/cm3。分析认为铝在非晶硅晶化过程中不仅扮演了诱导金属的角色,还起到了掺杂的作用。     

Ag颗粒表面等离子体增强GaAs太阳电池双层减反射膜的设计与模拟

Surface plasmon enhanced antireflection coatings for GaAs solar cells have been designed theoretically.The reflectance of double-layer antireflection coatings（ARCs） with different suspensions of Ag particles is calcu-lated as a function of the wavelength according to the optical interference matrix and the Mie theory.The mean dielectric concept was adopted in the simulations.A significant reduction of reflectance in the spectral region from 300 to 400 nm was found to be beneficial for the design of ARCs.A new SiO2/Ag-ZnS double-layer coating with better antireflection ability can be achieved if the particle volume fraction in ZnS is 1%-2%.     

石墨衬底上具有（220）/（400）择优取向多晶硅薄膜的制备及性质

在石墨衬底上分别制备了具有(220)和(400)择优取向的多晶硅薄膜.首先利用磁控溅射技术直接在石墨衬底上制备非晶硅薄膜层,以及先制备 ZnO 过渡层,再在 ZnO 过渡层上制备非晶硅薄膜层;然后采用快速退火法对非晶硅薄膜晶化,使其形成多晶硅薄膜籽晶层.XRD 测试表明,未引入 ZnO 过渡层的多晶硅薄膜籽晶层具有高度(220)择优取向,而引入 ZnO 过渡层的多晶硅薄膜籽晶层具有高度(400)择优取向;最后在多晶硅籽晶层上通过对流辅助化学气相沉积(CoCVD)制备多晶硅薄膜.根据 SEM、XRD、拉曼测试表明,多晶硅薄膜的性质延续了多晶硅籽晶层的性质,未引入 ZnO 过渡层的样品,具有高度(220)择优取向.引入 ZnO 过渡层后的样品,具有高度(400)择优取向,(400)择优取向的转变有利于后续多晶硅薄膜太阳电池的制作.同时对 Si(220)和 Si (400)择优取向的形成原因做了初步分析.     

GaInP/GaInAs 叠层太阳电池的结构设计及优化

我们计算了单级联GaInP/GaInAs叠层太阳能电池理论转换效率,在实验上它通常生长在GaAs衬底上。相比于传统的GaInP2/GaAs叠层电池,通过对禁带宽度组合的优化,我们得到了更高转换效率的体系结构。这里,对于所考虑禁带组合1.83eV/1.335eV,计算结果表明,当对其结构进行优化后（即顶电池GaInP厚度为1550nm,底电池GaInAs厚度为5500nm),其理论转换效率可以达到40.45% (300suns,AM1.5d),另外鉴于它相对于GaAs衬底较低的晶格失配（0.43%),在未来它将更具有应用前途。     

基于表面组装技术的聚光光伏接收器设计与制造

21世纪以来,以GaAs太阳能电池为核心光电器件的高倍聚光光伏技术发展迅速。接收器作为GaAs太阳能电池在高倍聚光光伏系统中的重要基本载体,其设计和制造是该类系统量产关键流程之一。本文介绍了高倍聚光接收器的设计原理和以表面组装技术为基础并具备量产潜力的接收器制造方法。