Military Influence on the Electrical Engineering Curriculum Since World War II

In World War II, the military discovered ``science,' notably in the forms of radar and the atom bomb. Regrettably, physicists?not engineers?developed these technologies, for engineering education had not prepared that generation of engineers to cope with innovation. Since that war, academic engineers have found it increasingly easier to get research funds for military-related projects than for others clearly non-military. Indeed, military-related support has been so abundant that ideas with primarily commercial rather than military application have been subordinated unless they could be expressed in potential-military terms. The standard electrical engineering curriculum has followed the pattern of academic research support since World War II. Courses in electronics, communications, and electromagnetic waves have grown out of the World War II experience in radar and subsequent developments in electronic warfare. Computer development began in World War II and has since been motivated primarily by military needs. Space activity likewise has had military motivation from the outset. New curricular trends reflect these military purposes. True, there has been valuable civilian ``spinoff' from these technologies, notably in the computer field. But one may ask whether military applications follow the available technology or whether perceived military needs drive the technology and hence the curriculum. If the latter is the case, we may be educating a generation unable to envision a world at peace.     

Modeling of CrSi2-Si and MoSi2-Si Schottkybarrier contacts

Forward and reverse l-V characteristics measured on CrSi₂ -Si and MoSi₂Si Schottky structures were compared with simulated ones. While the CrSi₂-Si shows the typical non-ideal I-V characteristics of a reverse biased Schottky contact, the MoSi₂-Si exhibit the nearly ideal forward and reverse I-V characteristics. The model for numerical simulation involves the clearly defined boundary conditions which combines the thermionic-emission/diffusion theory with the generation recombination theory and has the closed form     

On Costs, Benefits and Malefits in Technology Assessment

Cost-benefit analysis has been criticized on numerous grounds. It is common in such analyses to treat undesirable side effects (including risks) as external or social costs and to quantify these costs insofar as possible. In this paper I take the view that both desired effects (benefits) and undesired effects (malefits) are outputs of the technology. Costs are the dollars paid for the mixture of benefits and malefits actually produced. It is a futile and often misleading exercise to attempt to quantify the value of the net output of a public-service technology. A social-political decision must be taken as to whether or not the total output is worth the cost. If citizens are to participate usefully in such a decision, they need to understand the nature of this total output. Dollar-quantification of ``benefits' and ``external costs' obscures the actual physical-social effects of the technology. Cost-benefit analysis is a better tool for advocacy in technological decisions than for informing the public. By focusing attention on formulas and numbers, the analysis seems to substitute scientific reasoning for the painful process of making value judgments. But the value judgments are always present; they can be concealed but not escaped. Technological decisions are more political than scientific.     

Electrochemical behaviour of N-acetyl-l-cysteine on gold electrode—A tentative reaction mechanism

The electrochemical behaviour of N-acetyl-l-cysteine (NAC) has been investigated by linear and cyclic voltammetry on gold electrode at room temperature. The results showed two oxidation peaks under acid and neutral conditions and only one in basic medium. For each oxidation, as many electron was exchanged as proton. The influence of both the concentration and the potential scan rate on the peak currents highlighted a diffusion-controlled phenomenon for the first peak and an adsorption-limited reaction rate for the second one. The diffusion coefficient of NAC in solution and the surface concentration of the adsorbed species at pH 3 and 7 were close to 2 × 10⁻⁴ to 2 × 10⁻⁵ cm² s⁻¹ and 6 × 10⁻⁹ to 6 × 10⁻¹⁰ mol cm⁻², respectively. Film transfer experiments resulted in an irreversible adsorption of NAC on gold electrode, and the formation of a self-assembled monolayer (SAM).     

Preparation of polymeric hybrid nanocomposites based on PE and nanosilica

In this study the realization of nanocomposites based on a melt dispersion of nanoscopic silica particles in a polyethylene matrix is described. Different silane coupling agents were used to improve the interaction between nanosilica and polyethylene and then to improve the dispersion of the filler. In one case vinyl groups-containing silane coupling agents containing were used. The nanocomposite obtained with this modifier was transformed in a crosslinked organic-inorganic hybrid after an electron beam radiation treatment. The nanocomposites and the hybrid were characterized with TEM and FTIR. The thermal decomposition was studied in TGA. Mechanical properties were also detected, in a small punch test and wear resistance in a rotative drum abrader.     

Analysis of I–V measurements on PtSi-Si Schottky structures in a wide temperature range

I–V Measurements on PtSi-Si Schottky structures in a wide temperature range from 90 to 350 K were carried out. The contributions of thermionic-emission current and various other current-transport mechanisms were assumed when evaluating the Schottky barrier height Φ₀. Thus the generation-recombination, tunneling and leak currents caused by inhomogeneities and defects at the metal-semiconductor interface were taken into account.

Taking the above-mentioned mechanisms and their temperature dependence into consideration in the Schottky diode model, an outstanding agreement between theory and experiment was achieved in a wide temperature range.

Excluding the secondary current-transport mechanisms from the total current, a more exact value of the thermionic-emission saturation current I_te and thus a more accurate value ofΦ_b was reached.

The barrier height Φ_b and the modified Richardson constant A^** were calculated from the plot of thermionic-emission saturation current I_te as a function of temperature too. The proposed method of finding Φ_b is independent of the exact values of the metal-semiconductor contact area A and of the modified Richardson constant A^**. This fact can be used for determination of Φ_b in new Schottky structures based on multicomponent semiconductor materials.

Using the experimentally evaluated value A^** = 1.796 × 10⁶ Am⁻²K⁻² for the barrier height determination from I–V characteristics the value of Φ_b = 0.881 ± 0.002 eV was reached independent of temperature.

The more exact value of barrier height Φ_b is a relevant input parameter for Schottky diode computer-aided modeling and simulation, which provided a closer correlation between the experimental and theoretical characteristics.