Clinical evaluation of ultra-high-field MRI for three-dimensional visualisation of tumour size in uveal melanoma patients,with direct relevance to treatment planning

Objectives

To assess the tumour dimensions in uveal melanoma patients using 7-T ocular MRI and compare these values with conventional ultrasound imaging to provide improved information for treatment options.

Materials and methods

Ten uveal melanoma patients were examined on a 7-T MRI system using a custom-built eye coil and dedicated 3D scan sequences to minimise eye-motion-induced image artefacts. The maximum tumour prominence was estimated from the three-dimensional images and compared with the standard clinical evaluation from 2D ultrasound images.

Results

The MRI protocols resulted in high-resolution motion-free images of the eye in which the tumour and surrounding tissues could clearly be discriminated. For eight of the ten patients the MR images showed a slightly different value of tumour prominence (average 1.0 mm difference) compared to the ultrasound measurements, which can be attributed to the oblique cuts through the tumour made by the ultrasound. For two of these patients the more accurate results from the MR images changed the treatment plan, with the smaller tumour dimensions making them eligible for eye-preserving therapy.

Conclusion

High-field ocular MRI can yield a more accurate measurement of the tumour dimensions than conventional ultrasound, which can result in significant changes in the prescribed treatment.

     

Single-grain Si thin-film transistors SPICE model,analog and RF circuit applications

Single-grain thin-film transistors (SG-TFTs) fabricated inside location-controlled using μ-Czochralski process exhibit SOI-FETs like performance despite processing temperatures remaining below 350 °C. Thus, the SG-TFT is a potential technology for large-area highly-integrated electronic system and system-in-package, taking advantage of the system-on-flexible substrate and low manufacturing cost capabalities. The SG-TFT is modeled based on the BSIMSOI SPICE model where the mobility parameter is modified to fit the SG-TFT behavior. Therefore, analog and RF circuits can be designed and benchmarked. A two-stage telescopic cascode operational amplifier fabricated in a prototype 1.5 μm SG-TFT technology demonstrates DC gain of 55 dB and unity-gain bandwidth of 6.3 MHz. A prototype CMOS voltage reference demonstrates a power supply rejection ratio (PSRR) of 50 dB. With unity-gain frequency, f_T, in the GHz range, the SG-TFT can also enable RF circuits for wireless applications. A 12 dB gain RF cascode amplifier with integrated on-chip inductors operating in the 433 MHz ISM band is demonstrated.