Single-stage current-fed DC-DC converter with time-sharing controlof output voltage and input current

A single-stage current-fed DC/DC power converter structure and control strategy for simultaneous control of output voltage and current flowing in the input inductor are described. This configuration is suitable for high power-density applications because it results in reduced converter size and power loss. A very fast control-to-output response is obtained, together with stable operation even for large load and reference variations. Static and dynamic converter performances are investigated and design criteria given. Experimental results obtained on a prototype are also reported     

天生桥一级水电站混凝土面板堆石坝位移监测

天生桥一级电站混凝土面板堆石坝的填筑坝体位移监测通过水管式沉降仪和水平位移计进行。坝本内安装了５０支水管式沉降仪（瑞曲盒式）、３１支水平位移计（钢丝型伸缩仪）和２８支总压力计。监测结果表明，施工期末（１９９９年３月）最大坝体沉降是２．９４ｍ，相当于坝体高度的１．７％，施工期末堆石坝变形模量Ｅｒｃ平均４５ＭＰａ，为最大坝体变形，促使上游边坡出现裂缝以及面板浇筑前上游边坡明显沉降。     

A reconfigurable system featuring dynamically extensible embedded microprocessor, FPGA, and customizable I/O

A system chip targeting image and voice processing and recognition application domains is implemented as a representative of the potential of using programmable logic in system design. It features an embedded reconfigurable processor built by joining a configurable and extensible processor core and an SRAM-based embedded field-programmable gate array (FPGA). Application-specific bus-mapped coprocessors and flexible input/output peripherals and interfaces can also be added and dynamically modified by reconfiguring the embedded FPGA. The architecture of the system is discussed as well as the design flows for pre- and post-silicon design and customization. The silicon area required by the system is 20 mm/sup 2/ in a 0.18-/spl mu/m CMOS technology. The embedded FPGA accounts for about 40% of the system area.     

Organic field-effect transistors as new paradigm for large-area molecular junctions

Self-Assembly Monolayers (SAMs) are considered a promising route for solving technological hindrances (such as bias-stress, contact resistance, charge trapping) affecting the electrical performances of the Organic Field-Effect Transistors (OFETs). Here we use an OFET based on pentacene thin film to investigate the charge transport across conjugated SAMs at the Au/pentacene interface. We synthesized a homolog series of π-conjugated molecules, termed Tn-C8-SH, consisting of a n-unit oligothienyl Tn (n = 1…4) bound to an octane-1-thiol (C8-SH) chain that self-assembles on the Au electrodes. The multi-parametric response of such devices yields an exponential behavior of the field-effect mobility (μ), current density (J), and total resistivity (R), due to the SAM at the charge injection interface (i.e. Au-SAM-pentacene). The surface treatment of the OFETs induces a clear stabilization of different parameters, like sub-threshold slope and threshold voltage, thanks to standardized steps in the fabrication process.     

Effects of biomaterials for Lab-on-a-chip production on cell growth and expression of differentiated functions of leukemic cell lines

The rapid increase of the applications for Lab-on-a-chip devices has attracted the interest of researchers and engineers on standard process of the electronics industry for low production costs and large scale development, necessary for disposable applications. The printed circuit board technology could be used for this purpose, in particular for the wide range of materials available. In this paper, assays on biocompatibility of materials used for Lab-on-a-chip fabrication has been carried out using two tumor cell lines growing in suspension, the human chronic myelogenous leukemia K562 cell line, able to undergo erythroid differentiation when cultured with chemical inducers, and the lymphoblastoid cell line (LCL), extensively used for screening of cytotoxic T-lymphocytes (CTLs). We have demonstrated that some materials strongly inhibit cell proliferation of both the two cell lines to an extent higher that 70–75%, but only after a prolonged exposure of 3–6 days (Copper, Gold over Nickel, Aramid fiber filled epoxy uncured, b-stage epoxy die attach film, Tesa 4985 adhesive tape, Pyralux uncured, Copper + 1-octodecanethiol). However, when experiments were performed with short incubation time (1 h), only Aramid fiber filled epoxy uncured was cytotoxic. Variation of the results concerning the other materials was appreciable when the experiments performed on two cell lines were compared together. Furthermore, the effects of the materials on erythroid differentiation and CTL-mediated LCL lysis confirmed, in most of the cases, the data obtained in cytotoxic and antiproliferative tests.     

Superior Cerebellar Atrophy: An Imaging Clue to Diagnose ITPR1-Related Disorders

The inositol 1,4,5-triphosphate receptor type 1 (ITPR1) gene encodes an InsP₃-gated calcium channel that modulates intracellular Ca²⁺ release and is particularly expressed in cerebellar Purkinje cells. Pathogenic variants in the ITPR1 gene are associated with different types of autosomal dominant spinocerebellar ataxia: SCA15 (adult onset), SCA29 (early-onset), and Gillespie syndrome. Cerebellar atrophy/hypoplasia is invariably detected, but a recognizable neuroradiological pattern has not been identified yet. With the aim of describing ITPR1-related neuroimaging findings, the brain MRI of 14 patients with ITPR1 variants (11 SCA29, 1 SCA15, and 2 Gillespie) were reviewed by expert neuroradiologists. To further evaluate the role of superior vermian and hemispheric cerebellar atrophy as a clue for the diagnosis of ITPR1-related conditions, the ITPR1 gene was sequenced in 5 patients with similar MRI pattern, detecting pathogenic variants in 4 of them. Considering the whole cohort, a distinctive neuroradiological pattern consisting in superior vermian and hemispheric cerebellar atrophy was identified in 83% patients with causative ITPR1 variants, suggesting this MRI finding could represent a hallmark for ITPR1-related disorders.     

Spectroscopic Indications of Tunnel Barrier Charging as the Switching Mechanism in Memristive Devices

Resistive random access memory is a promising, energy‐efficient, low‐power “storage class memory” technology that has the potential to replace both flash storage and on‐chip dynamic memory. While the most widely employed systems exhibit filamentary resistive switching, interface‐type switching systems based on a tunable tunnel barrier are of increasing interest. They suffer less from the variability induced by the stochastic filament formation process and the choice of the tunnel barrier thickness offers the possibility to adapt the memory device current to the given circuit requirements. Heterostructures consisting of a yttria‐stabilized zirconia (YSZ) tunnel barrier and a praseodymium calcium manganite (PCMO) layer are employed. Instead of spatially localized filaments, the resistive switching process occurs underneath the whole electrode. By employing a combination of electrical measurements, in operando hard X‐ray photoelectron spectroscopy and electron energy loss spectroscopy, it is revealed that an exchange of oxygen ions between PCMO and YSZ causes an electrostatic modulation of the effective height of the YSZ tunnel barrier and is thereby the underlying mechanism for resistive switching in these devices.     

In situ X-ray analysis under controlled potential conditions: An innovative setup and its application to the investigation of ultrathin films electrodeposited on Ag(1 1 1)

An innovative setup to combine electrochemical and in situ surface X-ray diffraction (SXRD) measurements is described. This electrochemical cell has a different design from the other ones commonly used for X-ray diffraction studies. It allows the sample surface to stay always completely immersed into the solution under controlled potential conditions even during the SXRD measurements. The X-ray beam crosses the liquid (about 1 cm) and the cell walls. Because of the high X-ray energy, the beam attenuation is negligible and by an appropriate positioning of the detector arm slits it is possible to minimize the diffuse scattering induced by the liquid and cell walls in order to still detect the minima of the crystal truncation rods (CTRs). The liquid solution in the cell is managed by a special device, which allows the controlled exchange of the electrolyte solutions necessary in the electrochemical atomic layer epitaxy (ECALE) growth. The whole setup can be remotely controlled from outside the experimental hutch by a dedicated computer. As an example we report measurements on S layers deposited at underpotential on the Ag(1 1 1) surface, and on CdS films of increasing thickness.     

Erythroid Induction of Chronic Myelogenous Leukemia K562 Cells Following Treatment with a Photoproduct Derived from the UV‐A Irradiation of 5‐Methoxypsoralen

Induction of terminal erythroid differentiation can be an efficient strategy to inhibit proliferation of chronic myelogenous leukemia cells. Psoralens, well‐known photo‐chemotherapeutic agents, were found to be efficient at inducing erythroid differentiation of K562 cells, an in vitro cell line isolated from the pleural effusion of a patient with chronic myelogenous leukemia in blast crisis. The effects of crude pre‐irradiated solutions of 5‐methoxypsoralen on erythroid differentiation of human leukemic K‐562 cells were evaluated. The major photoproduct was characterized and analyzed, and it was found to induce erythroid differentiation of K562 cells and inhibit NF‐κB/DNA interactions.     

A low-power integrated circuit for remote speech recognition

In this paper, a low-power, low-voltage speech processing system is presented. The system is intended to he used in remote speech recognition applications where feature extraction is performed on terminal and high-complexity recognition tasks and moved to a remote server accessed through a radio link. The proposed system is based on a CMOS feature extraction chip for speech recognition that computes 15 cepstrum parameters, each 8 ms, and dissipates 30 μW at 0.9-V supply. Single-cell battery operation is achieved. Processing relies on a novel feature extraction algorithm using 1-bit A/D conversion of the input speech signal. The chip has been implemented as a gate array in a standard 0.5-μm, three-metal CMOS technology. The average energy required to process a single word of the TI46 speech corpus is 10 μJ. It achieves recognition rates over 98% in isolated-word speech recognition tasks