Low-voltage wideband compact CMOS variable gain amplifier

A novel low-voltage wideband CMOS variable gain amplifier (VGA) is proposed. Using a 0.13 /spl mu/m CMOS technology, the VGA exhibits a linear-dB controllable gain range of 40 dB with a bandwidth in excess of 130 MHz, while drawing only 50 /spl mu/A from a single 1 V power supply voltage.     

Self-powered wireless temperature sensors exploit RFID technology

Emerging RFID technology lets us embed sensors into a very small chip, creating a wireless sensing device. So, we set out to develop such a single-chip versatile temperature sensor. We also wanted to be able to transfer our design to an implantable temperature sensor for an animal healthcare application with minimal structural modification. We discuss the implementation of temperature sensor. The fully integrated complementary metal-oxide semiconductor (CMOS) batteryless device measures temperature and performs calibration to compensate for the sensor's inherent imperfections. An RF link using passive RFID's backscattering technique wirelessly transmits the data to a reading device while extracting power from the same "airwave," letting the device operate anywhere and last almost forever. The entire microchip, including the temperature sensor, consumes less than a few microamperes over a half a second, so the scanning device can capture data from longer read distances.     

Electron beam evaporated carbon nanotube dispersed SnO2 thin film gas sensor

Carbon nanotube (CNT) is a useful material for gas-sensing applications because of its high surface to volume ratio structure. In this work, multi-wall CNTs are incorporated into tin oxide thin film by means of powder mixing and electron beam evaporation and the enhancement of gas-sensing properties is presented. The CNTs were combined with SnO₂powder with varying concentration in the range of 0.25–5% by weight and electron beam evaporated onto glass substrates. From AFM and TEM characterization, CNT inclusion in SnO₂thin film results in the production of circular cone protrusions of CNT clusters or single tube coated with SnO₂layer. Experimental results indicate that the sensitivity to ethanol of SnO₂thin film increases by the factors of 3 to 7, and the response time and recovery time were reduced by the factors of 2 or more with CNT inclusion. However, if the CNT concentration is too high, the sensitivity is decreased. Moreover, the CNT doped film can operate with good sensitivity and stability at a relatively low temperature of 250–300^∘C. The improved gas-sensing properties should be attributed to the increasing of surface adsorption area of metal oxide produced by CNT protrusion.     

MPB Phase Transition and Microstructure of (1 – x)PMN–xPZT Activated by 0.05BZN Ceramics

The relaxor ferroelectric materials can be found in morphotropic phase boundary (MPB) existing between tetragonal and cubic phase. Since the MPB shifts to other phases by adding ceramics composition. [(1 – x)Pb(Mg_1/3 Nb_2/3)O₃–x Pb(Zr_0.52Ti_0.48)O₃] were doped by 0.05Ba(Zn_1/3 Nb_2/3)O₃ when x = 0.4, 0.3, and 0.2 ceramics, which prepared by using a two–step sintering process. The MPB transitions were studied by the use of XRD. The samples, at x = 0.4, were in MPB and then gradually shifted to cubic phase at x = 0.2. The microstructure of samples fracture found that the largest grain size of 4.51 μm for x = 0.2. This study using TEM technique which demonstrated a crystalline morphology with the largest crystal size about 1.293 μm at x = 0.3. These results also revealed that not only the ferroelectric phase shifted to relaxor behavior with decreasing PZT contents in PMN–PZT system but also activated by BZN, which led to the presence of the relaxor behavior.     

Synthesis of graft copolymers based on polyphenylene xylylene and fullerene grafted polystyrene

Graft copolymers containing poly(phenylene xylyene) (PPX) backbone and polystyrene fullerene (PSFu) grafting chains (PPX‐g‐PSFu) were prepared by using a purposed synthetic route comprising a combination of reaction mechanisms namely the modified Wessling route, an iniferter polymerization, and an atom transfer radical addition (ATRA). The monomer was first prepared by reacting dichloroxylene with tetrahydrothiophene. After that the monomer was polymerized in a sodium hydroxide solution to provide a polymer precursor. Subsequently, the polymer precursor was modified by reacting it with a dithiocarbamate (DTC) compound. The macroiniferter was obtained and then copolymerized with styrene and chloromethylstyrene via an iniferter polymerization. Finally, the graft copolymer was reacted with fullerene through an ATRA technique to attach the C60 groups onto the graft copolymer molecule. The products obtained from each of the steps were characterized by using various techniques including Fourier transform infrared spectroscopy, proton nuclear magnetic resonance spectroscopy, gel permeation chromatography, differential scanning calorimetry, UV–visible spectroscopy, and thermal gravimetric analysis. The aforementioned results suggest that the graft copolymers were prepared. The grafting yield and grafting efficiency were found to increase with the monomers concentration and the amount of DTC used. Some homopolymer contaminants also occurred but those could be minimized and subsequently removed by extraction with selective solvents. These graft copolymer products might be used for the development of a bulk heterojunction polymer solar cell. © 2009 Wiley Periodicals, Inc. J Appl Polym Sci, 2010     

Ultra‐Low‐Power Differential ISFET/REFET Readout Circuit

A novel ultra‐low‐power readout circuit for a pH‐sensitive ion‐sensitive field‐effect transistor (ISFET) is proposed. It uses an ISFET/reference FET (REFET) differential pair operating in weak‐inversion and a simple current‐mode metal‐oxide semiconductor FET (MOSFET) translinear circuit. Simulation results verify that the circuit operates with excellent common‐mode rejection ability and good linearity for a single pH range from 4 to 10, while only 4 nA is drawn from a single 1 V supply voltage.     

Low‐Voltage Current‐Sensing CMOS Interface Circuit for Piezo‐Resistive Pressure Sensor

A new low‐voltage CMOS interface circuit with digital output for piezo‐resistive transducer is proposed. An input current sensing configuration is used to detect change in piezo‐resistance due to applied pressure and to allow low‐voltage circuit operation. A simple 1‐bit first‐order delta‐sigma modulator is used to produce an output digital bitstream. The proposed interface circuit is realized in a 0.35 µm CMOS technology and draws less than 200 µA from a single 1.5 V power supply voltage. Simulation results show that the circuit can achieve an equivalent output resolution of 9.67 bits with less than 0.23% non‐linearity error.     

Tin oxide thin films deposited by ultrasonic spray pyrolysis

This study investigated microstructure of SnO₂ thin films deposited by ultrasonic spray pyrolysis technique using 0.2 M of SnCl₄·5H₂O in absolute ethanol as a precursor. The deposition temperature (350–450 °C) and time (20–90 min) were varied. The influence of film-deposition conditions on grain size and orientation were discussed. The deposited SnO₂ films were textured polycrystalline films. The preferred orientation of SnO₂ films were quantitatively evaluated by texture coefficient (TC). The mean grain size and film thickness determined by SEM could be controlled over a range of 50–325 nm and 80–2690 nm, respectively.     

State-space synthesis of oscillators based on the MOSFET square law

A state-space synthesis of oscillators based on the large-signal square-law characteristic of a MOSFET in saturation is presented. The approach is an extension of the recently proposed MOSFET square-law filter synthesis methodology. Simulation results demonstrate that oscillation at megahertz frequencies is attainable. The oscillation frequency is also electronically tunable. The total harmonic distortion (THD) is simulated as 0.1-3% for output voltages between 80 mV and 1.1 V peak-to-peak, respectively. This oscillation amplitude can be controlled by an additional CMOS limiter