CMOS circuit testing via time-resolved luminescence measurements and simulations

The continuous trend in modern CMOS technology toward smaller devices and faster clock frequency is challenging the picosecond imaging circuit analysis technique. In this paper we discuss the role of the single-photon avalanche diode with very sharp time resolution in testing CMOS circuits. Thanks to the 30 ps-time resolution, innovative measurements regarding delays and jitter are presented, along with a case study. A compact model of the luminescence is also proposed and used to compare on-chip electrical signals with optical waveforms.     

Single-photon avalanche diode detectors for quantum key distribution

The application of quantum key distribution (QKD) has raised particular demands for single-photon detectors. One of the most promising candidates at the low-loss optical fibre communications windows is the planar geometry InGaAs/InP single-photon avalanche diode. These detectors have been modelled, fabricated and characterised at 1.55 mum wavelength. Their performance in terms of single-photon detection efficiency, dark count rate, timing jitter and afterpulsing behaviour are reported and compared with the best commercially available, linear multiplication avalanche photodiodes operated in Geiger-mode. Their use in the application of QKD is discussed.     

Fitting fatigue data with a bi‐conditional model

The formulation of a probability‐stress‐life (P‐S‐N) curve is a necessary step beyond the basic S‐N relation when dealing with reliability. This paper presents a model, relevant to materials that exhibits a fatigue limit, which considers the number of cycles to failure and the occurrence of the failure itself as statistically independent events, described with different distributions and/or different degree of scatter. Combining these two as a parallel system leads to the proposed model. In the case where the S‐N relation is a Basquin's law, the formulations of the probability density function, cumulative distribution function, quantiles, parameter and quantile confidence interval are presented in a procedure that allows practically any testing strategy. The result is a flexible model combined with the tools that deliver a wide range of information needed in the design phase. Finally, an extension to include static strength and applicability to fatigue crack growth and defects‐based fatigue approach are presented.     

Avalanche photodiodes and quenching circuits for single-photon detection

Avalanche photodiodes, which operate above the breakdown voltage in Geiger mode connected with avalanche-quenching circuits, can be used to detect single photons and are therefore called singlephoton avalanche diodes SPAD's. Circuit configurations suitable for this operation mode are critically analyzed and their relative merits in photon counting and timing applications are assessed. Simple passive-quenching circuits (PQC's), which are useful for SPAD device testing and selection, have fairly limited application. Suitably designed active-quenching circuits (AQC's) make it possible to exploit the best performance of SPAD's. Thick silicon SPAD's that operate at high voltages (250-450 V) have photon detection efficiency higher than 50% from 540- to 850-nm wavelength and still ~3% at 1064 nm. Thin silicon SPAD's that operate at low voltages (10-50 V) have 45% efficiency at 500 nm, declining to 10% at 830 nm and to as little as 0.1% at 1064 nm. The time resolution achieved in photon timing is 20 ps FWHM with thin SPAD's; it ranges from 350 to 150 ps FWHM with thick SPAD's. The achieved minimum counting dead time and maximum counting rate are 40 ns and 10 Mcps with thick silicon SPAD's, 10 ns and 40 Mcps with thin SPAD's. Germanium and III-V compound semiconductor SPAD's extend the range of photon-counting techniques in the near-infrared region to at least 1600-nm wavelength.     

Iberian universities: a characterisation from ESI rankings

The access to bibliographic and citation databases allows to evaluate scientific performance, and provides useful means of general characterisation. In this paper we investigate the clustering of Iberian universities, resulting from the similarity in the number and specific nature of the scientific disciplines given by the Essential Science Indicators database. A further refining of the analysis, as provided by PCA, clearly reveals the relationship between the universities and the scientific disciplines in the main groups. Similarity between universities is not dictated only by the number of areas in the ranking, but also stems from the nature of the ranked scientific areas and the specific combination in each university.     

Test structures for dielectric spectroscopy of thin films at microwave frequencies

This work describes the application of two different test structures to execute broadband microwave measurements of the dielectric constant of ceramic thin films. Coplanar waveguide probes and vector network analyzer were used to measure the dielectric constant versus frequency of thin films of lead zirconate titanate and zirconium titanate, fabricated by sol gel methods. One-step lithography was used to produce planar metal-insulator-metal and interdigitated capacitor test patterns. The two test structures are compared for zirconium titanate films. The metal-insulator-metal method has been applied also to a lead zirconate titanate film and to show the capability of computing the dielectric tunability.     

High-rate quantum key distribution at short wavelength: Performance analysis and evaluation of silicon single photon avalanche diodes

Abstract

Experimental results obtained with silicon single photon avalanche diodes (SPADs) in quantum key distribution (QKD) at short wavelengths reveal remarkable potential for application in local area networks (LAN) and for free-space transmission at high rate. Actual application prospects, however, depend on the performance level and on the suitability of practical systems using the available silicon SPAD devices. They can be essentially divided in two groups: planar p-n junction structures with a thin depletion layer (typically 1 μm); and reach-through structures with a thick depletion layer (from 20 μm to 150μm). The physical mechanisms that control the device behaviour were investigated and the effect on the key parameters of the detector (quantum detection efficiency, dark counting rate, afterpulsing probability and photon-timing jitter) were thoroughly assessed. A quantitative analysis was made of the influence of such parameters on the quantum bit error rate (QBER). Actual parameters were measured and the attainable performance and system suitability of the two device types evaluated. Comparable performance is obtained, but from a system viewpoint thin SPADs appear inherently better suited to high-rate QKD applications, because of their faster response time, ruggedness, low voltage, low power dissipation and fabrication technology, which is simple, efficient, economical and compatible with monolithic integration of detector and associated circuits.     

Hydrogen sorption in MgH2-based composites: The role of Ni and LiBH4 additives

In the present work we investigate the hydrogen sorption properties of composites in the MgH₂–Ni, MgH₂–Ni–LiH and MgH₂–Ni–LiBH₄ systems and analyze why Ni addition improve hydrogen sorption rates while LiBH₄ enhance the hydrogen storage capacity. Although all composites with Ni addition showed significantly improved hydrogen storage kinetics compared with the pure MgH₂, the fastest hydrogen sorption kinetics is obtained for Ni-doped MgH₂. The formation of Mg₂Ni/Mg₂NiH₄ in Ni-doped MgH₂ composite and its microstructure allows to uptake 5.0 wt% of hydrogen in 25 s and to release it in 8 min at 275 °C. In the MgH₂–Ni–LiBH₄ composite, decomposition of LiBH₄ occurs during the first dehydriding leading to the formation of diborane, which has a Ni catalyst poison effect via the formation of a passivating boron layer. A combination of FTIR, XRD and volumetric measurements demonstrate that the formation of MgNi₃B₂ in the MgH₂–Ni–LiBH₄ composite happens in the subsequent hydriding cycle from the reaction between Mg₂Ni/Mg₂NiH₄ and B. Activation energy analysis demonstrates that the presence of Ni particles has a catalytic effect in MgH₂–Ni and MgH₂–Ni–LiH systems, but it is practically nullified by the addition of LiBH₄. The beneficial role of LiBH₄ on the hydrogen storage capacity of the MgH₂–Ni–LiBH₄ composite is discussed.     

Time-of-Flight Optical Ranging System Based on Time-Correlated Single-Photon Counting

The design and implementation of a prototype time-of-flight optical ranging system based on the time-correlated single-photon-counting technique are described. The sensor is characterized in terms of its longitudinal and transverse spatial resolution, single-point measurement time, and long-term stability. The system has been operated at stand-off distances of 0.5-5 m, has a depth repeatability of <30 mum, and has a lateral spatial resolution of <500 mum.