InAs quantum dot photonic crystal lasers and their temperature dependence

We report on the demonstration of optically pumped photonic crystal lasers with InAs quantum dot active regions operating at room temperature near 1310 nm. Absorbed threshold pump powers as low as 25 /spl mu/W are observed. We also extract a characteristic temperature of 17 K, which is attributed to limitations caused by surface recombination.     

Reproducibility of functional transcranial Doppler sonography in determining hemispheric language lateralization

BACKGROUND AND PURPOSE: Since functional transcranial Doppler ultrasonography (fTCD) allows convenient and fully automated quantification of language lateralization, it seems ideal for longitudinal studies of perfusion changes during deterioration as well as recovery of language functions. However, during serial examinations, the technical, stochastic, and physiological variabilities of cerebral blood flow velocities (CBFV) have to be considered. Therefore, before fTCD is accepted as a tool for evaluation of changes in lateralization in the diseased state, its reliability in healthy subjects needs to be determined. METHODS: We performed fTCD during a word generation task based on a previously validated technique with automated calculation of the averaged CBFV differences in the middle cerebral arteries providing an index of lateralization (LI). RESULTS: (1) The accuracy of the LI as assessed by the confidence interval was better than 1% of the mean hemispheric difference. (2) On repeated examination, LIs obtained from 10 subjects showed a high test-retest reproducibility (Pearson product moment correlation coefficient r = 0.95, P < 0.0001). (3) On 10 repeated assessments of LI in the same subject, no practice effects were detected. CONCLUSIONS: Functional TCD is a suitable and very robust tool for the longitudinal quantitative measurement of cerebral language lateralization.     

Überlegungen zur Erweiterung des Klebstoffangebots im Holzleimbau

The procedure of testing adhesives for glulam production depends in Europe on the kind of resin. For example the testing of phenol-formaldehyde resins (PF-resins) includes the boiling test method, because the curing rate of these resins show a significant correlation between the strength after boiling and the resistance to moisture influence. On the other hand this test method is commonly insufficient for testing other resins. The results of investigations of glulam based on different kinds of resins show that there is a possibility to substitute the boiling test by a short-time accelerated aging method (KZB-Test) which will offer the same differentiation.     

Self-consistent calculation of the lasing eigenmode of thedielectrically apertured Fabry-Perot microcavity with idealized ordistributed Bragg reflectors

Optical confinement in the dielectrically apertured Fabry-Perot microcavity is investigated theoretically. The apertured region is first treated as embedded in an idealized planar waveguide to show that the confined eigenmode's resonant frequency can cut off parasitic waveguide modes existing outside the aperture, and lead to three-dimensional optical confinement. For more realistic cavities with nonunity mirror reflectivities, self-consistent calculations of the eigenmode characteristics are performed for the limit of an optically thin aperture to derive the lowest order confined eigenmode frequency, threshold susceptibility, and mode profile. The analysis is then extended to treat dielectric cavities based on Bragg reflectors     

Buchbesprechungen

Ohne Zusammenfassung     

Low-threshold vertical-cavity surface-emitting lasers based onoxide-confinement and high contrast distributed Bragg reflectors

The interest in low-threshold vertical-cavity surface-emitting lasers (VCSEL's) is increased by the demonstration of the small size, low loss optical mode due to oxide-confinement in the Fabry-Perot microcavity laser. Intense recent work in this area has resulted in numerous record breaking demonstrations of low-threshold current, high wall-plug efficiency, and high speed. In this paper, we discuss the impact of the dielectric cavity design to enhance control of the optical mode. We argue that high contrast dielectric mirrors can become an important design approach, especially for small apertures limited by diffraction loss. Experimental results are compared for different types of mirror and aperture designs     

Threshold Temperature Dependence of a Quantum-Dot Laser Diode With and Without p-Doping

A study of the threshold characteristics of quantum-dot (QD) laser diodes shows how inhomogeneous broadening and p-doping influence the QD laser's temperature dependence of threshold T ₀. The analysis includes the additional parameters of homogeneous broadening, quantum state populations, and threshold gain. The results show that while the source of negative T ₀ can occur due to different effects, the transparency current plays a critical role in both undoped and p-doped QD lasers. Experimental trends of negative T ₀ and their dependence on p-doping are replicated in the calculated results. Inhomogeneous broadening is found to play a lesser role to the transparency current in setting T ₀. Homogeneous broadening is most important for uniform QDs with thermally isolated ground-state transitions.     

Optical memory using a vertical-cavity surface emitting laser

Data are presented demonstrating optical switching and memory in a bistable vertical-cavity surface-emitting laser (VCSEL). Optical switching from lasing to nonlasing or from nonlasing to lasing in the vertical-cavity laser was demonstrated using an AlGaAs probe laser at ~0.78 μm     

Investigations on the damage caused by ion etching of SiO2 layers at low energy and high dose

The radiation damage caused by argon ion bombardment during ion etching of thermally grown SiO₂ films at an energy below 1 keV and a dose of about 10¹⁸ cm^?2 has been studied by evaluating MOS C-V curves, FET characteristics, as well as Rutherford ion backscattering spectra. The bombarded samples revealed that ion beam etching in this energy range causes a damaged layer of 5–10 nm thickness at the single crystal silicon surface. Moreover, traces of metal atoms are found in the damaged layer together with argon atoms (≈ 10²¹cm^?3).