Analysis of saturation currents and barrier height of Ta2O5 doped based on Ba0,5S0,5TiO3 photodiode

Ba_0,5Sr_0,5TiO₃ (BST) thin films have been prepared on Si (100) p-type substrates using a chemical solution deposition (CSD) method and doped with 0%, 2.5%, 5%, 7.5%, 10% tantalum pentaoxide (Ta₂O₅). Chemical Solution Deposition Method (CSD) used the spin coating techniques with a rotational speed of 3000?rpm for 30?seconds. BST thin films annealed at a temperature 850?°C. Various electrical parameters such as saturation current, series resistance and barrier height have been calculated from the analysis of experimental I–V results and discussed in detail. The series resistance was found from the experiment of 42.8 MΩ, 7.9 MΩ, 7.2 MΩ, 2.03 MΩ, 1.2 MΩ for variation doping content. The saturation current of 22.3 μA, 2.7 μA, 9.7 μA, 4.82 μA, 4.50 μA was obtained in BST thin film with variation doping content. Then, the barrier height of 0.56?eV, 0.62?eV, 0.58?eV, 0.54?eV, 0.60?eV was obtained in BST thin film with variation doping content. The optical characterization and analysis microstructure such as XRD, EDX were discussed in detail.     

Characterization of Ba0.55Sr0.45TiO3 films as light and temperature sensors and its implementation on automatic drying system model

The growth of Ba_0.55Sr_0.45TiO₃ films on p-type silicon substrate with depletion and enhancement treatments have been conducted in this research. The aims were to examine film sensitivity as light sensor and value range, resolution, acuracy level, and their hysteresis as temperature sensor. The films were annealed at 800, 850, and 900 °C for 15 hours. In this work, enhancement BST of 850 °C was the best quality film and utilized as light and temperature sensors. Its implementation has been successfully conducted on ATMega8535 microcontroller-based automatic drying system model by exploiting the working principle of the BST films as automatic switch.