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排序方式: 共有3607条查询结果,搜索用时 15 毫秒
1.
Tsuneaki Matsudaira Masashi Wada Naoki Kawashima Miyuki Takeuchi Daisaku Yokoe Takeharu Kato Masasuke Takata Satoshi Kitaoka 《Journal of the European Ceramic Society》2021,41(5):3150-3160
Mass transfer in polycrystalline Yb2SiO5 wafers with precise composition control was evaluated and analyzed by oxygen permeation experiments at high temperatures using an oxygen tracer. Oxygen permeation proceeded due to mutual grain boundary diffusion of oxide ions and Yb ions without synergistic effects such as acceleration or suppression. The oxygen shielding properties of Yb2SiO5 were compared with those of the other line compounds such as Yb2Si2O7 and Al2O3 based on the determined mass transfer parameters. It was found that the more preferentially an oxide ion diffuses in the grain boundary compared to the interior of the grain, the greater the effect of suppressing the movement of the oxide ion by applying an oxygen potential gradient becomes. 相似文献
2.
H. Sakata A. Katagiri M. Yokoi T. Kato H. Morimoto 《Journal of Low Temperature Physics》2003,131(3-4):275-279
We have measured the tunneling spectra in Bi2Sr2CaCu2O8 with a scanning tunneling microscope(STM) at various tip-sample distances by changing the tunneling conductance in a controlled manner. When the tunneling conductance is increased from 1×10–9 to 1×10–5 S, the spectra do not show changes in particular. However, the gap value decreases steeply and the asymmetric back ground density of states turns inverted V-shaped one above 6×10–4 S. The changes in the tunneling spectra at the high tunneling conductances are explained by the enhancement of the local carrier density induced by the pressure that the STM tip applied to the sample. 相似文献
3.
4.
Ichiro Hirosawa Tetsuo Honma Kazuo Kato Naoto Kijima Yasuo Shimomura 《Journal of the Society for Information Display》2004,12(3):269-273
Abstract— We studied the influence of annealing in air on doped europium in BaMgAl10O17 by performing x‐ray absorption fine‐structure measurements. We determined the oxidation of doped divalent europium by annealing in air at over 500°C. The interatomic distance between the europium and the surrounding oxygen atoms was compressed by oxidation. It also appears that the oxidation process of europium is determined by the diffusion of oxygen into BaMgAl10O17. 相似文献
5.
6.
Zengyun Jian Kosuke Nagashio Kazuhiko Kuribayashi 《Metallurgical and Materials Transactions A》2002,33(9):2947-2953
Using an electromagnetic levitation facility with a laser heating unit, silicon droplets were highly undercooled in the containerless
state. The crystal morphologies on the surface of the undercooled droplets during the solidification process and after solidification
were recorded live by using a high-speed camera and were observed by scanning electron microscopy. The growth behavior of
silicon was found to vary not only with the nucleation undercooling, but also with the time after nucleation. In the earlier
stage of solidification, the silicon grew in lateral, intermediary, and continuous modes at low, medium, and high undercoolings,
respectively. In the later stage of solidification, the growth of highly undercooled silicon can transform to the lateral
mode from the nonlateral one. The transition time of the sample with 320 K of undercooling was about 535 ms after recalescence,
which was much later than the time where recalescence was completed. 相似文献
7.
Mingjun Li Kosuke Nagashio Ph.D. Kazuhiko Kuribayashi 《Metallurgical and Materials Transactions A》2002,33(8):2677-2683
A mullite (3Al2O3·2SiO2) sample has been levitated and undercooled in an aero-acoustic levitator, so as to investigate the solidification behavior
in a containerless condition. Crystal-growth velocities are measured as a function of melt undercoolings, which increase slowly
with melt undercoolings up to 380 K and then increase quickly when undercoolings exceed 400 K. In order to elucidate the crystal
growth and solidification behavior, the relationship of melt viscosities as a function of melt undercoolings is established
on the basis of the fact that molten mullite melts are fragile, from which the atomic diffusivity is calculated via the Einstein-Stokes equation. The interface kinetics is analyzed when considering atomic diffusivities. The crystal-growth
velocity vs melt undercooling is calculated based on the classical rate theory. Interestingly, two different microstructures are observed;
one exhibits a straight, faceted rod without any branching with melt undercoolings up to 400 K, and the other is a feathery
faceted dendrite when undercoolings exceed 400 K. The formation of these morphologies is discussed, taking into account the
contributions of constitutional and kinetic undercoolings at different bulk undercoolings. 相似文献
8.
9.
Yamaoka M. Shinozaki Y. Maeda N. Shimazaki Y. Kato K. Shimada S. Yanagisawa K. Osada K. 《Solid-State Circuits, IEEE Journal of》2005,40(1):186-194
An on-chip 1-Mb SRAM suitable for embedding in the application processor used in mobile cellular phones was developed. This SRAM supports three operating modes - high-speed active mode, low-leakage low-speed active mode, and standby mode - and uses a subdivisional power-line control (SPC) scheme. The combination of three operating modes and the SPC scheme realizes low-power operation under actual usage conditions. It operates at 300 MHz, with leakage of 25 /spl mu/A/Mb in standby mode, and 50 /spl mu/A/Mb at the low-leakage active mode. This SRAM also uses a self-bias write scheme that decreases of minimum operating voltage by about 100 mV. 相似文献
10.
Toshiharu Makino Hiromitsu Kato Sung-Gi Ri Yigang Chen Hideyo Okushi 《Diamond and Related Materials》2005,14(11-12):1995
Electrical properties of homoepitaxial diamond p–n+ junction of boron (B)-doped p-type layer and phosphorus-doped n-type layer on Ib (111) diamond single crystal have been characterized. Current–voltage characteristics show a clear rectifying property with rectification ratio of over 105 at ± 10 V. From capacitance–voltage characteristics, it is found that a spatial distribution of space-charge density Ni of the p–n+ junction is not uniform and Ni at a middle region of the space-charge layer formed at zero bias voltage is higher than that of other region of the space-charge layer. This peculiar characteristic can be explained by superposition of two effects; one is the deep dopant effect due to B atoms in the p-type layer, which makes to reduce Ni at around the edge of the space-charge layer formed at zero bias voltage. The other is the compensation of B acceptors by impurity atoms diffusing during the p–n+ interface and incorporating during the growth of p-type layer, which makes to reduce Ni at the vicinity of the p–n+ interface. 相似文献