Isolation of antimicrobial agent from the marine algae Cystoseira hakodatensis

Cystoseira hakodatensis is an unutilised brown algae belonging to family Sargassaceae. A crude methanol extract from the algae showed inhibitory effects on the growths of Bacillus cereus and Bacillus licheniformis. To isolate the major antimicrobial agent, a sequential active‐guided isolation procedure was applied: liquid–liquid extraction, column chromatography and bio‐autography. A marked antimicrobial agent (active α) was isolated in hydrophobic fraction and was determined to phenolics without carbohydrates and proteins by phytochemical test. Regarding the antimicrobial potential, the isolated active α showed better inhibitory effects against B. cereus and B. licheniformis at 2 and 4 times of lower concentrations (62.5 and 31.3 μg mL^?1) in comparison with epigallocatechin gallate. These results showed that C. hakodatensis is a potential source of antimicrobial agent capable of preventing the growth of the two bacteria.     

Microstructure and mechanical behaviour of 3Y-TZP/Mo nanocomposites possessing a novel interpenetrated intragranular microstructure

Yttria stabilized tetragonal zirconia polycrystal (Y-TZP)/0-100 vol % molybdenum (Mo) composites were fabricated by hot-pressing a mixture of Y-TZP powder containing 3 mol % yttria (Y₂O₃) and a fine Mo powder in vacuum. This composite system possessed a novel microstructural feature composed of an interpenetrated intragranular nanostructure, in which either nanometer sized Mo particles or equivalent sized zirconia (ZrO₂) particles located within the ZrO₂ grains or Mo grains, respectively. The strength and toughness were both greatly enhanced with increasing Mo content for the 3Y-TZP/Mo composites thus breaking through the strength-toughness tradeoff relation in transformation toughened ZrO₂ and its composite materials. They exhibited a maximum strength of 2100 MPa and a toughness of 11.4 MPa·m^1/2 for the composite containing 70 vol % Mo. These simultaneous improvements in strength and toughness were determined to be the result of a decrease in flaw size associated with the interpenetrated intragranular nanostructure, and a stress shielding effect created in the crack tip by the elongated Mo polycrystals bridging the crack tip in addition to the stress induced phase transformation.     

Ruthenium dye-sensitized SnO2/TiO2 coupled solar cells

The photoelectrochemical behaviors of RuL₂(NCS)₂ dye-sensitized SnO₂/TiO₂ coupled solar cell was studied and compared with TiO₂ single system. The coupled system shows higher incident photon-to-current conversion efficiency (IPCE) value than the single system. A maximum IPCE value in the coupled system with 3.5 μm-thick SnO₂ and 7 μm-thick TiO₂ attained 82.4% at 530 nm wavelength. The higher IPCE value in the coupled system is attributed to the charge separation by fast electron transfer process from the excited RuL₂(NCS)₂ dye to TiO₂ to SnO₂ in the system with different energy level.     

A 322 MHz random-cycle embedded DRAM with high-accuracy sensing and tuning

A 16 Mb embedded DRAM macro in a fully CMOS logic compatible 90 nm process with a low noise core architecture and a high-accuracy post-fabrication tuning scheme has been developed. Based on the proposed techniques, 61% improvement of the sensing accuracy is realized. Even with the smallest 5 fF/cell capacitance, a 322 MHz random-cycle access while 32 ms data retention time which contributes to save the data retention power down to 60 /spl mu/W are achieved.     

Flashover voltage characteristics of contaminated station insulators under temporary ac overvoltages in the ac system connected with a frequency converter station

According to the recent analysis results of temporary ac overvoltage in the ac system connected with a frequency converter station, large-magnitude over-voltages were confirmed to occur under some special system conditions. Most of the station insulators currently used cannot withstand such overvoltages according to an evaluation based on the data obtained earlier. The necessity of tests to be done to evaluate such performance more accurately was recognized. Both power frequency and switching impulse overvoltage flashover tests were made on contaminated insulators by the method well simulating the natural wetting condition. Switching impulse flashover voltage with the waveshape having a long wavefront time of 2 ms can be well correlated with the flashover voltage characteristics of temporary ac overvoltage. Higher flashover voltage characteristics were obtained by a clean fog test method compared with those obtained by equivalent fog test method.     

IBM's Linux watch, the challenge of miniaturization

Nearly four years in development, the IBM Linux watch contains a complete computer system that runs Linux, displays X11 graphics, and has wireless connectivity. The system fits in a case that could pass as a slightly unusual analog timepiece with a somewhat odd shape and an extraordinarily brilliant face. The developers have created two versions of the watch, one with an organic light-emitting diode display and the other with a liquid crystal display. Still considered a research prototype, the watch already runs some personal information management applications, and it can communicate with PCs, PDAs, and other wireless-enabled devices, viewing condensed e-mail and directly receiving pager-like messages. Eventually, users will be able to access various Internet-based services, such as up-to-the-minute information about weather, traffic conditions, the stock market, and sports     

A 6-ns ECL 100 K I/O and 8-ns 3.3-V TTL I/O 4-Mb BiCMOS SRAM

The authors report a 4 M word×1 b/1 M word×4 b BiCMOS SRAM that can be metal mask programmed as either a 6-ns access time for an ECL 100 K I/O interface to an 8-ns access time for a 3.3-V TTL I/O interface. Die size is 18.87 mm×8.77 mm. Memory cell size is 5.8 μm×3.2 μm. In order to achieve such high-speed address access times the following technologies were developed: (1) a BiCMOS level converter that directly connects the ECL signal level to the CMOS level; (2) a high-speed BiCMOS circuit with low threshold voltage nMOSFETs; (3) a design method for determining the optimum number of decoder gate stages and the optimum size of gate transistors; (4) high-speed bipolar sensing circuits used at 3.3-V supply voltage; and (5) 0.55-μm BiCMOS process technology with a triple-well structure