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排序方式: 共有1718条查询结果,搜索用时 15 毫秒
1.
Shogo Mamada Naoyuki Yaguchi Masanori Hansaka Masafumi Yamato Hirohisa Yoshida 《应用聚合物科学杂志》2015,132(15)
This study was addressed to the influence of an electric field strength applied at fabrication process and matrix properties, such as the dielectric constant and the Young's modulus, on “pseudo‐1‐3 piezoelectric ceramic/polymer composite” in order to further enhance the piezoelectricity of that. The pseudo‐1‐3 piezoelectric ceramic/polymer composite consists of linearly ordered piezoelectric ceramic particles in polymer material. Silicone gel, silicone rubber, urethane rubber, and poly‐methyl‐methacrylate, which exhibit different dielectric constants and Young's modulus, were used as matrices to evaluate the matrix influence. The piezoelectricity of the pseudo‐1‐3 piezoelectric ceramic/polymer composite was evaluated using the piezoelectric strain constant d33. The d33 is one of the indices of the piezoelectric properties for piezoelectric materials. As a result, it was confirmed that d33 of the pseudo‐1‐3 piezoelectric ceramic/polymer composite increased with the increase of the electric filed strength applied at fabrication process, though, it reached a constant value at a certain strength value. Further it was confirmed that dielectric constant of the matrix had a small influence on d33 of the pseudo‐1‐3 piezoelectric ceramic/polymer composite, however, in case of matrix of lower Young's modulus, d33 was increase. © 2014 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2015 , 132, 41817. 相似文献
2.
Hiromichi Ichinose Masanori Taira Sachiko Furuta Hiroaki Katsuki 《Journal of the American Ceramic Society》2003,86(9):1605-1608
Niobium- or vanadium-doped anatase sols were prepared by hydrothermal treatment of 0.1 mol/dm3 peroxotitanium complex aqueous solutions dissolving 0–10 mol% niobium or vanadium at 100°C for 8 h. Niobium-doping caused the increase of lattice constants of anatase and the shape change of anatase crystal from spindle-like to cubic-like structure, but no change of the optical absorbance. Vanadium-doping caused the decrease of lattice constant of c -axis, the miniaturization of anatase crystal and the increase of optical absorbance at the wavelength from 350–700 nm. 相似文献
3.
Tanabe A. Nakahara Y. Furukawa A. Mogami T. 《Solid-State Circuits, IEEE Journal of》2003,38(1):107-113
A redundant multivalued logic is proposed for high-speed communication ICs. In this logic, serial binary data are received and converted into parallel redundant multivalued data. Then they are restored into parallel binary data. Because of the multivalued data conversion, this logic makes it possible to achieve higher operating speeds than that of a conventional binary logic. Using this logic, a 1:4 demultiplexer (DEMUX, serial-parallel converter) IC was fabricated using a 0.18-/spl mu/m CMOS process. The IC achieved an operating speed of 10 Gb/s with a supply voltage of only 1.3 V and with power consumption of 38 mW. This logic may achieve CMOS communication ICs with an operating speed several times greater than 10 Gb/s. 相似文献
4.
Deformation behavior of stoichiometric blends made from poly(styrene-co-styrenesulfonic acid) (SPS) and poly(styrene-co-4-vinylpyridine) (SVP) was investigated by TEM observation of strained thin films. An FTIR investigation revealed that ionic cross-links were formed between the component polymers upon blending due to intermolecular ion-ion interactions, which arose from proton transfer from sulfonic acid groups to pyridine groups. TEM observations indicate that the deformation mode of the blends changed from crazing only to crazing plus shear deformation, with the shear contribution becoming larger, as the ion content in the blends increased. Such changes in deformation mode can be understood as arising from an increase in the ‘effective’ strand density due to the formation of ionic cross-links upon blending. It was also found that the ionic cross-links via pyridinium cation/sulfonate anion ion pairs were more effective in inducing the transition of deformation mode than ionic cross-links via -SO3−/Na+ or -SO3−/Ca2+ ion pairs. 相似文献
5.
Kotaro Take-uchi Takashi E-naka Norimitsu Kon-no Yozo Hosotani Takashi Orimoto Masanori Iwase 《国际钢铁研究》1997,68(12):516-519
By employing an electrochemical technique involving stabilized zirconia as solid electrolyte and Mo + MoO2 mixture as reference electrode, the equilibrium oxygen partial pressures for three-phase assemblages of CaSiO3(s) + Ca3Si2O7(s) + {CaO + SiO2 + FexO} melt and Ca3Si2O7(s) + Ca2SiO4(s) + {CaO + SiO2 + FexO} melt were determined as: - log {PO2 (CS + C3S2 + L)/bar} = - 3.22 13000/(T/K) ± 0.05 - log {PO2 (C3S2 + C2S + L)/bar} = - 0.92 16400/ (T/K) ± 0.04. respectively, where CS, C3S2 and C2S indicate CaSiO3(s), Ca3Si2O7(s). and Ca2SiO4(s), respectively. 相似文献
6.
There are several damping phenomena in quantum optics. Such phenomena have been usually explained by open systems. In statistical physics, open system dynamics have been used to study the irreversibility and the approach to equilibrium. In this paper, the dynamical change of the mutual entropy for an open system, frequently studied in the quantum optics literature, is rigorously computed through a model of quantum Markov chain. In particular, the concrete formula of Stinespring expression for such a model is obtained and applied to the derivation of the mutual entropy, and some computational results are presented. 相似文献
7.
The mechanical properties of Si3N4-SiC, SiNx and SiCy films prepared at a low temperature of 400 °C by plasma chemical vapour deposition are reported. Microhardness, internal stress of the film and adhesive strength between the film and glass or stainless steel substrate were evaluated as principal mechanical properties. Microhardness was measured to be about 10 to 20 G Pa dependent on the film composition in each system. Internal stress of the films on borosilicate glass substrates extensively varied from tensile to compressive with the film composition change from Si3N4 to SiC. Adhesive strength, as ascertained by the scratch test, was about 580 to 800 MPa for crown glass substrates, and about 210 to 310 M Pa for 316 stainless steel substrates. It is pointed out that tensile stress in these films brought about more abrupt decreases of the adhesive strength than did compressive stress. 相似文献
8.
P.O. Fanger B.M. Ipsen G. Langkilde B.W. Olessen N.K. Christensen S. Tanabe 《Energy and Buildings》1985,8(3):225-236
Groups of 32 and 16 subjects of both sexes were exposed in an environmental chamber to radiant asymmetry caused by a cool wall, a warm wall, and a cool ceiling. Each subject was tested individually while seated and clothed at 0.6 clo. During each 3.5-hour experiment the subject was exposed to six radiant temperature asymmetries. He was asked whether and where he experienced any local cool or warm sensation, and whether it was felt to be uncomfortable. During the entire experiment he was kept thermally neutral by changing the air temperature according to his wishes.For cool walls, warm walls, and cool ceilings curves have been established showing the percentage of dissatisfied subjects as a function of the radiant asymmetry. Radiant asymmetry at a warm wall caused less discomfort than a cool wall. A cool ceiling caused less discomfort than a warm ceiling. Accepting that 5% of the subjects may feel uncomfortable. a radiant temperature asymmetry of 10°C is allowable at a cool wall, 23°C at a warm wall, and 14°C under a cool ceiling. A previous study showed that 4°C is allowable under a warm ceiling. Radiant asymmetry had no significant impact on the operative temperatures preferred by the subjects. No significant differences were observed between the responses of men and women exposed to radiant asymmetry. 相似文献
9.
10.
Chihiro J. Uchibori Y. Ohtani T. Oku Naoki Ono Masanori Murakami 《Journal of Electronic Materials》1997,26(4):410-414
Significant reduction of the contact resistance of In0.7Ga0.3As/Ni/W contacts (which were previously developed by sputtering in our laboratory) was achieved by depositing a W2N barrier layer between the Ni layer and W layer. The In0.7Ga0.3 As/Ni/W2N/W contact prepared by the radio-frequency sputtering technique showed the lowest contact resistance of 0.2 Ωmm after annealing
at 550°C for 10 s. This contact also provided a smooth surface, good reproducibility, and excellent thermal stability at 400°C.
The polycrystalline W2N layer was found to suppress the In diffusion to the contact surface, leading to improvement of the surface morphology and
an increase in the total area of the InxGa−As between metal and the GaAs substrate. These improvements are believed to reduce the contact resistance. 相似文献