Chemokines Up-Regulated in Epithelial Cells Control Senescence-Associated T Cell Accumulation in Salivary Glands of Aged and Sjögren’s Syndrome Model Mice

Immunosenescence is characterized by age-associated changes in immunological functions. Although age- and autoimmune-related sialadenitis cause dry mouth (xerostomia), the roles of immunosenescence and cellular senescence in the pathogenesis of sialadenitis remain unknown. We demonstrated that acquired immune cells rather than innate immune cells infiltrated the salivary glands (SG) of aged mice. An analysis of isolated epithelial cells from SG revealed that the expression levels of the chemokine CXCL13 were elevated in aged mice. Senescence-associated T cells (SA-Ts), which secrete large amounts of atypical pro-inflammatory cytokines, are involved in the pathogenesis of metabolic disorders and autoimmune diseases. The present results showed that SA-Ts and B cells, which express the CXCL13 receptor CXCR5, accumulated in the SG of aged mice, particularly females. CD4⁺ T cells derived from aged mice exhibited stronger in vitro migratory activity toward CXCL13 than those from young mice. In a mouse model of Sjögren’s syndrome (SS), SA-Ts also accumulated in SG, presumably via CXCL12-CXCR4 signaling. Collectively, the present results indicate that SA-Ts accumulate in SG, contribute to the pathogenesis of age- and SS-related sialadenitis by up-regulating chemokines in epithelial cells, and have potential as therapeutic targets for the treatment of xerostomia caused by these types of sialadenitis.     

Observation of cold-rolling texture and partially recrystallized texture in polycrystalline 3 pct Si-Fe by high-resolution electron backscattered diffraction

Cold-rolling texture and partially recrystallized texture of polycrystalline 3 pct Si-Fe were investigated using high-resolution electron backscattered diffraction (EBSD) method. From the measurement on a deformed grain with {211}〈011〉∼{111}〈011〉 orientations, deformation bands with {12 4 1}〈014〉 orientation were found. It turned out that the orientation rotation relationship between deformation bands and surrounding deformed grain can be explained by the activation of the slip system, which has a common slip plane with an adjacent grain. Oriented nucleation of recrystallized grains with {12 4 1}〈014〉 orientation was observed in a deformed grain with {211}〈011〉∼{111}〈011〉 orientation. Exactly the same orientation relationship that was observed between deformed grain and the deformation bands was also observed between the deformed grain and the recrystallized grain. A hypothesis that recrystallization nuclei are generated directly from the deformation bands formed by an activation of the slip system that has a common slip plane of neighboring deformed grains was proposed from the present experimental results.     

Time-dependent deformation in an enhanced SiC/SiC composite

Time-dependent deformation in an enhanced SiC/SiC composite has been studied under constant load at high temperatures of 1200 °C, 1300 °C, and 1400 °C. Creep damage evolution was evaluated by a Young’s-modulus change of partial unloading and microscopic observation. The addition of the glassy phase in the matrix is very effective for protecting the composite from oxidation. The transient creep is dominant in creep life at all the temperatures. An empirical equation is proposed to describe creep behavior of the composite. It is found that creep activation energy increases with creep time at stresses lower than matrix cracking stress, but the activation energy remains constant at stresses higher than the matrix cracking stress. The creep strain rate of the composite is considered to be controlled by creep of fibers based on examining the time, strain, stress, and temperature dependencies of creep strain rates.     

A high-speed halftoning processor for raster scanned images

A high-speed bilevel reproduction algorithm, called modified error diffusion (MED) algorithm, has been developed to provide high-quality halftoning images for continuous tone images and has been implemented in a CMOS LSI chip. The chip has been designed with standard-cell 1.5-μm CMOS technology using an optimum layout design. The chip has achieved a maximum processing speed of 60 ns/pixel     

Systematic analysis of neutron yields from thick targets bombarded by heavy ions and protons with moving source model

A simple phenomenological analysis using the moving source model has been performed on the neutron energy spectra produced by bombarding thick targets with high energy heavy ions which have been systematically measured at the Heavy-Ion Medical Accelerator (HIMAC) facility (located in Chiba, Japan) of the National Institute of Radiological Sciences (NIRS). For the bombardment of both heavy ions and protons in the energy region of 100–500 MeV per nucleon, the moving source model incorporating the knock-on process could be generally successful in reproducing the measured neutron spectra within a factor of two margin of accuracy. This phenomenological analytical equation is expressed having several parameters as functions of atomic number Z_p, mass number A_p, energy per nucleon E_p for projectile, and atomic number Z_T, mass number A_T for target. By inputting these basic data for projectile and target into this equation we can easily estimate the secondary neutron energy spectra at an emission angle of 0–90° for bombardment with heavy ions and protons in the aforementioned energy region. This method will be quite useful to estimate the neutron source term in the neutron shielding design of high energy proton and heavy ion accelerators.     

A Method to Evaluate Voltages to Earth During an Earth Fault in an HV Network in a System of Interconnected Earth Electrodes of MV/LV Substations

An easy and swift method to evaluate, in a system of interconnected earth electrodes, earth potentials on earthing systems of medium-voltage/low-voltage (MV/LV) substations, in an event of single-line-to-earth fault inside a high-voltage/medium- voltage (HV/MV) station, is presented. The advantage of the method is the simplicity of the mathematical model for solving complex systems of any size with a sufficient accuracy for practical purposes. This paper shows the results of simulations, performed on networks with different extensions and characteristics, organized in easy-to-read graphs and tables. A comparison of these results with the values obtained according to the procedure explained in the IEC-Standard 60909-3, and a study on the accuracy of the method has been made. Moreover, some considerations on the inclusion of earth electrodes of HV/MV stations within global earthing systems are done.     

Anomalous refractive indices of the amplifying medium in a waveguide CO2 laser

The relative changes in refractive index of the amplifying medium in a waveguide CO2 laser have been measured as a function of the inlet and outlet pressures, discharge current, gas flow rate, and intracavity power using an interferometric technique. The experiments have been made for two gas mixing ratios over a wide range of the inlet pressure. Saturated phenomena of the refractive index have been observed for increasing inlet pressure. The output power and the variation in impedance of the amplifying medium have been simultaneously measured. The dependence of the refractive index on the inlet pressure in the absence of the discharge, the electron density, and the estimation of errors in measurements are discussed.     

Relationship between crystallinity and device characteristics of In‐Sn‐Zn oxide

We have reported that the transistors having the c‐axis‐aligned crystalline (CAAC) In‐Ga‐Zn oxide (IGZO) show good performance. Recently, In‐Sn‐Zn Oxide (ITZO) has attracted much attention because of its high electron mobility, as well as IGZO. However, it has been reported that ITZO field effect transistors (FET) tend to have positive Vth (normally‐on characteristics) and poor reliability compared with IGZO‐FETs. We have reported that high‐performance and high‐reliability OS‐FETs can be fabricated by using CAAC‐IGZO, which has high crystallinity and has no clear grain boundaries, as an active layer. Therefore, we have fabricated CAAC‐ITZO thin films to improve performance of ITZO‐FETs by using CAAC‐ITZO as an active layer. In addition, FETs employing CAAC‐ITZO have better characteristics and reliability than FETs using nano‐crystal ITZO. Furthermore, constant photocurrent method (CPM) measurement was carried out in order to estimate density of deep‐level defect states caused by oxygen vacancies in oxide semiconductors. The results show that CAAC‐ITZO has lower density of deep‐level defect states than nano‐crystal ITZO. We attribute the improvement in reliability of ITZO‐FETs to a decrease in deep‐level defect states of an ITZO active layer, as is the case with IGZO.