Model plasma dispersion functions for SO phonon scattering in Monte Carlo simulations of high-κ dielectric MOSFETS

We have developed an accurate Padé approximant for the plasma dispersion function that is valid for degenerate semiconductors that occur in ultra-small MOSFETs. The new approximant is based on a two pole model that enables a simple evaluation of the Lindhard dielectric function for the full dynamic response of electrons of any degeneracy. The importance of this result is that it enables a fast numerical algorithm for determining the energies and scattering strengths of coupled plasmon-phonon modes in silicon MOSFET devices with high-κ gate stacks. Moreover, the formalism allows the systematic inclusion of Landau damping and other processes such as collisional damping that damp out some of the modes at particular ranges of wave vector. The new model is a non-trivially scaled model of a previous approximant derived for Boltzmann statistics. The new model reduces to the classical result in the appropriate limit. Results are presented that compare the exact numerically computed complex plasma dispersion function with the new Padé approximant model. Comparison is also made between exact numerical calculations and the Padé approximant model for static screening. A brief outline is made of the potential application to high-κ gate stack devices where the formalism should provide a significantly large reduction in complexity that will enable efficient Monte Carlo simulation of SO phonon and plasmon scattering.     

The Use of Quantum Potentials for Confinement and Tunnelling in Semiconductor Devices

As MOSFETs are scaled to sub 100 nm dimensions, quantum mechanical confinement in the direction normal to the silicon dioxide interface and tunnelling (through the gate oxide, band-to-band and from source-to-drain) start to strongly affect their characteristics. Recently it has been demonstrated that first order quantum corrections can be successfully introduced in self-consistent drift diffusion-type models using Quantum Potentials. In this paper we describe the introduction of such quantum corrections within a full 3D drift diffusion simulation framework. We compare the two most popular quantum potential techniques: density gradient and the effective potential approaches, in terms of their justification, accuracy and computational efficiency. The usefulness of their 3D implementation is demonstrated with examples of statistical simulations of intrinsic fluctuation effects in decanano MOSFETs introduced by discrete random dopants. We also discuss the capability of the density gradient formalism to handle direct source-to-drain tunnelling in sub 10 nm double-gate MOSFETS, illustrated in comparison with Non-Equilibrium Green's Functions simulations.     

A Genetic Algorithm Approach for Optimizing Traffic Control Signals Considering Routing

Abstract:   It is well known that coordinated, area-wide traffic signal control provides great potential for improvements in delays, safety, and environmental measures. However, an aspect of this problem that is commonly neglected in practice is the potentially confounding effect of drivers re-routing in response to changes in travel times on competing routes, brought about by the changes to the signal timings. This article considers the problem of optimizing signal green and cycle timings over an urban network, in such a way that the optimization anticipates the impact on traffic routing patterns. This is achieved by including a network equilibrium model as a constraint to the optimization. A Genetic Algorithm (GA) is devised for solving the resulting problem, using total travel time across the network as an illustrative fitness function, and with a widely used traffic simulation-assignment model providing the equilibrium flows. The procedure is applied to a case study of the city of Chester in the UK, and the performance of the algorithms is analyzed with respect to the parameters of the GA method. The results show a better performance of the signal timing as optimized by the GA method as compared to a method that does not consider rerouting. This improvement is found to be more significant with a more congested network whereas under a relatively mild congestion situation the improvement is not very clear.     

A spectroelectrochemical investigation of the influence of sodium diisobutyldithiophosphinate on silver dissolution in aqueous cyanide

Polarization studies have been carried out to determine the influence of diisobutyldithiophosphinate (DIBDTPI) on the dissolution of silver in cyanide solutions at pH 11. DIBDTPI was found to inhibit dissolution at concentrations similar to those used when this compound is applied as a flotation collector. The inhibition efficiency in 10^–2 mol dm^–3 CN^– was found to increase with increase in DIBDTPI concentration in the range 10^–6–10^–4 mol dm^–3, and with increase in time of exposure of the silver to the DIBDTPI solution. The inhibition efficiency found for 10^–4 mol dm^–3 DIBDTPI in quiescent 10^–2 mol dm^–3 CN^– solution at 23 °C was 64.6% and 95.0% for exposure times of 10 min and 2 h, respectively. These values are significantly less than those found previously for 2-mercaptobenzothiazole under the same conditions. Surface enhanced Raman spectroscopy showed that inhibition was associated with adsorption of DIBDTPI displacing cyanide from the silver surface. Voltammetry at 0.5 mV s^–1 indicated that adsorption of DIBDTPI involves charge transfer.     

Adsorbate-assisted NO decomposition in NO reduction by C3H6 over Pt/Al2O3 catalysts under lean-burn conditions

The rates and product selectivities of the C₃H₆-NO-O₂ and NO-H₂ reactions over a Pt/Al₂O₃ catalyst, and of the straight, NO decomposition reaction over the reduced catalyst have been compared at 240C. The rate of NO decomposition over the reduced catalyst is seven times greater than the rate of NO decomposition in the C₃H₆-NO-O₂ reaction. This is consistent with a mechanism in which NO decomposition occurs on Pt sites reduced by the hydrocarbon, provided only that at steady state in the lean NO _x reaction about 14% of the Pt sites are in the reduced form. However, the (extrapolated) rate of the NO-H₂ reaction at 240C is about 10⁴ times faster than the rate of the NO decomposition reaction thus raising the possibility that NO decomposition in the former reaction is assisted by H_ads. It is suggested that adsorbate-assisted NO decomposition in the C₃H₆-NO-O₂ reaction could be very important. This would mean that the proportion of reduced Pt sites required in the steady state would be extremely small. The NO decomposition and the NO-H₂ reactions produce no N₂O, unlike the C₃H₆-NO-O₂ reaction, suggesting that adsorbed NO is completely dissociated in the first two cases, but only partially dissociated in the latter case. It is possible that some of the associatively adsorbed NO present during the C₃H₆-NO-O₂ reaction may be adsorbed on oxidised Pt sites.