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排序方式: 共有3421条查询结果,搜索用时 31 毫秒
1.
Tatsuro Tanaka Yoshifumi Maeda Shinji Yamamoto Toru Iwao 《Electrical Engineering in Japan》2019,207(1):15-23
The arc welding has been used in various welding methods because it is inexpensive and high in strength after welding. However, it is a problem that accidents such as collapse of the bridge occur because of the welding defects. The welding of low cost and high productivity is required without the welding defects. The pulsed TIG welding is inexpensive and capable of high‐quality welding. The electromagnetic force contributing to penetration changes because the transient response of arc temperature and iron vapor generated from anode occurs. However, the analysis of pulsed TIG welding with metal vapor has been elucidated only metal vapor concentration near anode with transient phenomenon and heat flux. Thus, the theoretical elucidation of penetration depth with control factor has not been researched. In this paper, the contribution of metal vapor mass at the periphery part of pulsed arc to the electromagnetic force in the weld pool is elucidated. As a result, the iron vapor mass at periphery part decreased with increasing the frequency. The iron vapor was stagnated at axial center within one cycle. The electromagnetic force to the penetration depth direction in weld pool increased at axial center. Therefore, the metal vapor mass at periphery part plays an important role for the electromagnetic force increment at axial center. 相似文献
2.
Li Lei Limin Li Shasha Wang Gaoyang Zhao Yoshifumi Oshima Yang Ren Lei Zhao Lihua Jin Yao Wang Chengshan Li Pingxiang Zhang 《Journal of the European Ceramic Society》2018,38(14):4694-4700
Highly (100)-oriented Ce1-x(Y0.2Zr0.8)xOδ (CYZO) films were prepared on biaxially textured NiW substrates by a chemical solution deposition approach using metal inorganic salts as starting materials. It has been found that both the preferential orientation and surface roughness of CYZO films decrease gradually with increasing of the doping percentage of Y3+ and Zr4+ ions. The epitaxial growth relationship of (220)CYZO//(200)NiW and [00?l]CYZO//[001]NiW was demonstrated by XRD texture measurement as well as atomic resolution STEM observation. XRD, Raman and XPS spectra results indicate that Y3+ and Zr4+ ions were indeed introduced into CeO2 lattice to substitute Ce4+ ions and form cubic fluorite CYZO solid solution. Moreover, CeO2 buffer layer can be endowed a strong enough capability to prevent element diffusion through co-doping of yttrium and zirconium, provided that an optimal doping ratio of them is adopted. This will provide a new approach to fabricating strong-barrier single buffer layer for coated conductor. 相似文献
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H. Okamoto 《Journal of Phase Equilibria and Diffusion》2002,23(4):384-385
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1-GHz-spaced 16-channel arrayed-waveguide grating for a wavelength reference standard in DWDM network systems 总被引:3,自引:0,他引:3
We fabricated a 1-GHz-spaced 16-channel arrayed-waveguide grating (AWG) by using a new AWG configuration where the path of each arrayed waveguide winds backward and forward across a 4-in diameter wafer without crossing any other waveguides. The ultra-narrow (< 1 GHz) and stable transmission bands of this AWG can be used to construct a wavelength reference standard covering the S, C, and L bands in the dense wavelength-division-multiplexing network systems whose frequency deviation is /spl plusmn/160 MHz. 相似文献
10.
Wakejima A. Matsunaga K. Okamoto Y. Ando Y. Nakayama T. Miyamoto H. 《Electronics letters》2005,41(25):1371-1372
A single-ended amplifier using small packaged GaN-FETs exhibits a record 2.14 GHz W-CDMA output power. The amplifier, composed of paralleled 48 mm gate periphery FET die, delivers a peak saturated output power of 371 W with a linear gain of 11.2 dB at a drain voltage of 45 V under 2.14 GHz 3GPP W-CDMA signal input. The output power density (output power/package size) of 1.1 W/mm/sup 2/ is twice as high as that of the existing over 300 W GaAs-FET amplifiers. A low 5 MHz offset ACLR of -36 dBc with a drain efficiency of 24% is also obtained at 8 dB power back off from the saturated output power. 相似文献