全文获取类型
收费全文 | 107篇 |
免费 | 2篇 |
专业分类
电工技术 | 10篇 |
化学工业 | 19篇 |
金属工艺 | 2篇 |
机械仪表 | 3篇 |
建筑科学 | 6篇 |
能源动力 | 6篇 |
轻工业 | 11篇 |
水利工程 | 1篇 |
无线电 | 11篇 |
一般工业技术 | 18篇 |
冶金工业 | 11篇 |
原子能技术 | 1篇 |
自动化技术 | 10篇 |
出版年
2022年 | 1篇 |
2021年 | 4篇 |
2020年 | 1篇 |
2017年 | 1篇 |
2016年 | 3篇 |
2015年 | 2篇 |
2014年 | 5篇 |
2013年 | 6篇 |
2012年 | 6篇 |
2011年 | 4篇 |
2010年 | 5篇 |
2009年 | 4篇 |
2008年 | 5篇 |
2007年 | 5篇 |
2006年 | 6篇 |
2005年 | 4篇 |
2004年 | 5篇 |
2003年 | 4篇 |
2002年 | 4篇 |
2001年 | 1篇 |
2000年 | 1篇 |
1998年 | 9篇 |
1997年 | 2篇 |
1996年 | 4篇 |
1995年 | 1篇 |
1994年 | 3篇 |
1993年 | 2篇 |
1990年 | 1篇 |
1989年 | 2篇 |
1985年 | 2篇 |
1984年 | 1篇 |
1983年 | 1篇 |
1981年 | 1篇 |
1979年 | 1篇 |
1978年 | 1篇 |
1975年 | 1篇 |
排序方式: 共有109条查询结果,搜索用时 437 毫秒
1.
Lingfeng Zhou Zhipeng Zeng Michael P. Brady Donovan N. Leonard Harry M. Meyer Yukinori Yamamoto Wenyuan Li Greg Collins Xingbo Liu 《International Journal of Hydrogen Energy》2021,46(41):21619-21633
The chromium (Cr) evaporation behavior of several different types of iron (Fe)-based AFA alloys and benchmark Cr2O3-forming Fe-based 310 and Ni-based 625 alloys was investigated for 500 h exposures at 800 °C to 900 °C in air with 10% H2O. The Cr evaporation rates from alumina-forming austenitic (AFA) alloys were ~5 to 35 times lower than that of the Cr2O3-forming alloys depending on alloy and temperature. The Cr evaporation behavior was correlated with extensive characterization of the chemistry and microstructure of the oxide scales, which also revealed a degree of quartz tube Si contamination during the test. Long-term oxidation kinetics were also assessed at 800 to 1000 °C for up to 10,000 h in air with 10% H2O to provide further guidance for SOFC BOP component alloy selection. 相似文献
2.
These days, the number of pharmaceutical patent applications which do not specify the principal active ingredient in the form of a chemical name or structure is increasing. These patents are difficult to retrieve in retrospective on-line searches using chemical structures or keywords. Furthermore, even if you could find them, the situation with regard to patentability is obscure and this causes considerable problems for the experts in charge of the patent search. If you are a searcher for a large pharmaceutical company, you might already be apprehensive of infringing such patents. We, the JFA,* gathered these patents together and studied the differences between their patentability in Japan, the US and the EPO. 相似文献
3.
N,N'- Unsymmetrical dialkyl-3,4:9,10-perylenebis(dicarboximide)s (in which alkyl = methyl, ethyl, propyl, butyl, isobutyl, pentyl, hexyl and octyl) were prepared by the condensation of N-alkyl-3,4:9,10-perylene-tetracarboxylic monoanhydride monoimide with the appropriate alkyl-amines. The properties of these derivatives as pigments were tested and their thermal stability measured. 相似文献
4.
N′-Alkyl-N′-aryl-3,4:9,10-perylenebis(dicarboximide) (alkyl = isobutyl, pentyl, hexyl, octyl, etc.; aryl = phenyl, p-tolyl, p-methoxyphenyl, etc.) were prepared by the condensation of N-alkyl-3,4:9,10-perylene-tetracarboxylic monoanhydride monoimide with arylamines (aniline, p-toluidine, p-anisidine, o-phenylenediamine, etc.). The properties of these derivatives as pigments were tested, and also the thermal stability of 3,4:9,10-perylenebis(dicarboximide) derivatives was measured. 相似文献
5.
6.
Makoto Tanaka Mikio Taguchi Tsuysohi Takahama Toru Sawada Shigeru Kuroda Takao Matsuyama Shinya Tsuda Akio Takeoka Shoichi Nakano Hiroshi Hanafusa Yukinori Kuwano 《Progress in Photovoltaics: Research and Applications》1993,1(2):85-92
A new solar cell structure named HIT (Heterojunction with Intrinsic Thin layer) has been developed based on new artificially constructed junction (ACJ) technology. In this structure a non-doped a-Si thin layer was inserted between the p(a-Si)/n(c-Si) heterojunction, improving the output characteristics and achieving a conversion efficiency of 18.1%. This structure was applied to cast polycrystalline silicon solar cells of a practical size. A high conversion efficeincy of 13.6% was obtained with a cell size of 10 cm × 10 cm using various technologies, including hydrogen plasma passivation. 相似文献
7.
Masato Nishikuni Tsuyoshi Takahama Shingo Okamoto Kunimoto Ninomiya Hidenori Nishiwaki Shinya Tsuda Akio Takeoka Michotoshi Ohnishi Shoichi Nakano Yukinori Kuwano 《Progress in Photovoltaics: Research and Applications》1994,2(3):211-219
A new approach to high-performance a-Si solar cells was studied. a-Si films prepared at a high substrate temperature (> 250°C) have a higher absorption coefficient and a low Si H2 bond density. the effect of deposition temperature on the open-circuit voltage (Voc) has been investigated systematically for glass/SnO2 Ipin/metal and glass/metal/nip/indium tin oxide (ITO) structure a-Si solar cells. The Voc is found to depend strongly on the thermal history of the p/i interface. A short-circuit current of 19.5 mA/cm−−2 was achieved for an a-Si solar cell using an a-Si i-layer with a thickness of 4000 Å, which was prepared at a substrate temperature of 270°C. 相似文献
8.
9.
Makoto Tsubota Yukinori Yasui Waichi Ogura 《Journal of Low Temperature Physics》1998,113(3-4):609-614
The quantum statistics of three-dimensional vortex filament in superfluid
4
He is investigated by the use of path integral techniques. The free energy evaluated in the saddle point approximation decreases abruptly at a certain critical value of the applied superflow velocity. This critical behavior is in quantitative agreement with the experimental result of vortex nucleation by a moving ion. The dissipation effects are also discussed within the damped harmonic oscillator approximation. 相似文献
10.
Isao Kagomiya Shinji Matsumoto Ken-ichi Kakimoto Hitoshi Ohsato Hiroshi Sakai Yukinori Maeda 《Journal of the European Ceramic Society》2013,33(5):985-990
We investigated annealing effects of La1?xSrxMnO3 (x = 0–0.6) on electrical resistivity and the temperature coefficient of resistivity (TCR). The annealed samples’ resistivity was lower than those of non-annealed samples. For example, annealing changed the resistivity of x = 0.3 at 25 °C from 4.50 × 10?5 to 3.71 × 10?5 Ω m. Remarkable difference in TCR was observed after annealing, for x = 0.3, 0.45, and 0.5. For x = 0.3, the TCR after annealing was 4000 ppm/°C, which was 1250 ppm/°C greater than that before annealing. We investigated (1) crystal phase, (2) Mn average valence, (3) Mott insulator–metal transition temperature, and (4) microstructure. The microstructure was remarkably varied for annealed x = 0.3 and 0.5. The average grain size of the x = 0.3 increased from 1.60 up to 2.38 μm. Results show that annealing affects resistivity and TCR because of grain growth during annealing. 相似文献