含硫化氢气井钻井过程中的腐蚀因素与防护研究

在含硫气井的钻井过程中对于HRC大于22的钻具钢材除了腐蚀疲劳之外，在pH值小于9的环境中会发生硫化物应力腐蚀破裂，这种破坏比腐蚀疲劳更突然、更快，使钻杆大量损坏。含硫气井在钻井过程中，由于湿硫化氢的出现，常常会出现油管、套管、钻井设备、钻井仪器以及对支持保护管柱的水泥环柱等腐蚀和损坏问题，为此，阐述了湿硫化氢的腐蚀特点、机理，归纳总结了影响腐蚀的因素，综述了如何在这些方面防止其腐蚀，使损失减小，为指导油管、套管防腐工程实践提供了依据。建议在钻井过程中采用碱性钻井液，其pH值可到9或更高(至pH值12)，以减缓或防止钻井过程中电化学从硫化物应力腐蚀破裂；含硫气井用的钻杆应该间歇使用。钻杆停用堆置时间可使其放氢，使钻杆恢复韧性，防止硫化物应力腐蚀断裂。     

Finding all hops shortest paths

In this letter, we introduce and investigate a new problem referred to as the All Hops Shortest Paths (AHSP) problem. The AHSP problem involves selecting, for all hop counts, the shortest paths from a given source to any other node in a network. We derive a tight lower bound on the worst-case computational complexities of the optimal comparison-based solutions to AHSP.     

DSP--数字化时代的基因芯片

DSP是当今发展最为迅速的和最有发展前景的技术之一。与普通CPU和MCU相比 ,DSP在数字信号处理方面有着无可比拟的优势 ,特别适合网络、通信、控制等需要进行大量数字信号处理的应用场合。今天DSP已经成为通信、计算机、网络、工业控制以及家用电器等电子产品中不可或缺的基础器件 ,DSP在通信、计算机、网络、工业控制以及消费类电子产品等领域有着非常广泛的应用 ,本文阐述了DSP的特点、应用和市场以及DSP技术的发展前景。     

游梁式抽油机间歇供电装置的研制与应用

针对游梁抽油机电动机效率低和井场窃电问题,研制了具有节电和防井场窃电功能的游梁抽油机调压+间歇供电装置。该装置通过控制可控硅的导通角实现在电动机做功期调压供电,在电动机发电期不供电。分析了间歇供电对电动机、抽油机和电网的影响;根据现场实测数据分析了该装置的节电效果及现场应用情况。该装置节电效果显著,能防止井场窃电,可用于对游梁抽油机电动机的长期驱动。     

一种PDMS薄膜型微阀的制备与性能分析

通过厚胶光刻工艺在硅片上制备SU-8胶模板，利用该模板制备了高分子聚合物PDMS(Polvdimethvlsiloxane，聚二甲基硅氧烷)微流道和薄膜结构。通过对不同结构的两层PDMS的不可逆粘接得到一种简单的阀结构，在外加气源压力作用下薄膜产生变形实现对微流道的控制。实验测量了微阀的控制气源压力与被控制液体流量之间的关系，说明膜阀的开闭性能良好。根据弹性薄膜的变形理论，对影响微阀性能的参数进行了分析，并提出了几种可行的用于薄膜微阀控制的方法。     

求解二维结构-声耦合问题的一种直接方法

本文基于传递矩阵法(TMM)和虚拟边界元法(VBEM)，提出了一种求解在谐激励作用下二维结构-声耦合问题的直接法。文中对任意形状的二维弹性环建立了一阶非齐次运动微分方程组，便于用齐次扩容精细积分法求解，对于含有任意形状孔穴的无穷域流体介质的Helmholtz外问题，采用复数形式的Burton-Miller型组合层势法建立了虚拟边界元方程，保证了声压在全波数域内存在唯一解。根据叠加原理并结合最小二乘法，提出了一种耦合方程的直接解法，由于该方法不存在迭代过程，因而具有较高的计算精度和效率。文中给出了二个典型弹性环在集中谐激励力作用下声辐射算例，计算结果表明本文方法较通常采用的混合FE／BE法更为有效。     

Platinum Binuclear Complexes as Phosphorescent Dopants for Monochromatic and White Organic Light‐Emitting Diodes

Efficient blue‐, green‐, and red‐light‐emitting organic diodes are fabricated using binuclear platinum complexes as phosphorescent dopants. The series of complexes used here have pyrazolate bridging ligands and the general formula C^∧NPt(μ‐pz)₂PtC^∧N (where C^∧N = 2‐(4′,6′‐difluorophenyl)pyridinato‐N,C^2′, pz = pyrazole ( 1 ), 3‐methyl‐5‐tert‐butylpyrazole ( 2 ), and 3,5‐bis(tert‐butyl)pyrazole ( 3 )). The Pt–Pt distance in the complexes, which decreases in the order 1 > 2 > 3 , solely determines the electroluminescence color of the organic light‐emitting diodes (OLEDs). Blue OLEDs fabricated using 8 % 1 doped into a 3,5‐bis(N‐carbazolyl)benzene (mCP) host have a quantum efficiency of 4.3 % at 120 Cd m^–2, a brightness of 3900 Cd m^–2 at 12 V, and Commission Internationale de L'Eclairage (CIE) coordinates of (0.11, 0.24). Green and red OLEDs fabricated with 2 and 3 , respectively, also give high quantum efficiencies (～ 6.7 %), with CIE coordinates of (0.31, 0.63) and (0.59, 0.46), respectively. The current‐density–voltage characteristics of devices made using dopants 2 and 3 indicate that hole trapping is enhanced by short Pt–Pt distances (< 3.1 Å). Blue electrophosphorescence is achieved by taking advantage of the binuclear molecular geometry in order to suppress dopant intermolecular interactions. No evidence of low‐energy emission from aggregate states is observed in OLEDs made with 50 % 1 doped into mCP. OLEDs made using 100 % 1 as an emissive layer display red luminescence, which is believed to originate from distorted complexes with compressed Pt–Pt separations located in defect sites within the neat film. White OLEDs are fabricated using 1 and 3 in three different device architectures, either with one or two dopants in dual emissive layers or both dopants in a single emissive layer. All the white OLEDs have high quantum efficiency (～ 5 %) and brightness (～ 600 Cd m^–2 at 10 V).     

Corrected Sum Rule, Generalized Virial Identity and Elementary Excitation Spectrum of Bose–Einstein Condensates at Any Trapped Atom Number

Using a corrected sum rule and a generalized virial identity, we study the analytical expression for entire modes of the collective elementary excitation spectrum in a trapped Bose–Einstein condensate at any atom number. Explicit analytical formulas for the spectrum are obtained for the harmonic traps with both spherical symmetry and axial symmetry using the gaussian approximation for the N-body ground-state wave function of the condensate. These formulas give the simple dependence of all energy levels on the atom numbers, their interaction strength and trap geometry parameters.     

新结构MOSFET

和传统平面结构MOSFET相比，新结构MOSFET具有更好的性能(如改善的沟道效应(SCE)，理想的漏诱生势垒降低效应(DIBL)和亚阈值特性)和更大的驱动电流等。文章主要介绍了五种典型的新结构MOSFET，包括平面双栅MOSFET、FinFET、三栅MOSFET、环形栅MOSFET和竖直结构MOSFET。随着MOSFET向亚50nm等比例缩小，这些新结构器件将大有前途。