Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique

This paper describes the fabrication of NMOS-transistors with a geometric gate length of down to 50 nm using conventional optical lithography and a modified sidewall-etchback process. Based on measurements the transistors are characterised and their device parameters are compared to simulations. Finally the procedures for further optimisation of the process will be explained.     

Change in the philosophy of work†

Production contributes to the increase of ordered complexity. Quantitative growth in energy or other resource consumption may, beyond certain thresholds, be unimportant, if not destructive to ‘production’ in that sense. In certain cases, an equivalence can be stated between production and negative consumption. High efficiency in the use of energy and environmental resources is becoming an indicator of technological progress. High productivity leads to the need for redistributing work. Leisure work becomes more indicative of personalities than stupid professional work. Individual combinations of work elements (both paid and unpaid) rather than standardized professions will characterize people in the future.     

Inverter circuits on glass substrates based on ZnO-nanoparticle thin-film transistors

The integration technique and the properties of inverter circuits on glass substrates using ZnO nanoparticles as semiconductor material are presented. The inverter device consists of a switching and a load metal–insulator–semiconductor field-effect transistor with poly(4-vinylphenol) as the gate dielectric. Although the semiconductor is deposited by spin-coating of a colloidal ZnO dispersion and the process temperature is limited to 200 °C, the inverters show reasonable maximum peak gains at low power consumption. The maximum peak gain was 6 V/V, whereas the maximum static power dissipation density was less than 26 nW/μm². Additionally, the influence of the geometry ratio as well as of the supply voltage on the device performance has been investigated. With regard to the optical characteristics, the proposed technique leads to circuits with an optical transmittance of up to 80%.     

ON THE INTERPRETATION AND CHAINING OF FUZZY IF-THEN RULE BASES USING FUZZY EQUALITY INDICATORS

An interpretation of fuzzy IF-THEN rule bases using certain classes of indicators for fuzzified set inclusion and set equality is defined. Some properties of this interpretation and the chaining of fuzzy IF-THEN rule bases are investigated from a theoretical point of view.     

CMOS-compatible organic light-emitting diodes

We report a new method for the integration of light-emitting devices on a silicon substrate. As an active layer, we use unsubstituted PPV or PPV-based organic macromolecules with a p⁺-silicon anode and a cathode made from aluminum or titanium. The polymer is deposited by spin-coating the precursor, followed by a thermal conversion step to form the macromolecules. All process steps, including the possibility of dry etching of the active layer and the upper electrode, are typical for MOS technology. Spectrum analysis, current-voltage, and intensity measurements have been carried out for device characterization. These organic light-emitting diodes allow the monolithic integration of microelectronic circuits and light-emitting devices on one silicon chip applying only typical MOS process steps     

Purification of L-asparaginase II by crystallization

Here a case study of L-asparaginase II out of a recombinant Escherichia coli is presented. The target protein was obtained by simple cell disintegration and acetone precipitation. The L-asparaginase II has been crystallized in three different forms in the following microbatch crystallization. The rod-shaped crystals (~400 μm edge length) were obtained at either 8°C or 22°C after 17 h by addition of PEG₆₀₀₀. The rectangular-shaped crystals were obtained after further recrystallization of the rod-shaped crystals. The rhombic-shaped crystals formed at 8°C after 12 days when cold ethanol was used instead of PEG₆₀₀₀. All crystallizations were performed in tris-acetate buffer (50 mmol·L^-1, pH 5.1). By crystallization, the specific activity of L-asparaginase II has increased 5-fold. The protein content and the purity of the crystals were evaluated by sodium dodecyl sulfate polyacrylamide gel electrophoresis (SDS-PAGE). The more concentrated L-asparaginase II out of an extract mixture and the presence of only less minor proteins after crystallization demonstrates that crystallization is an effective and mild method to purify the target protein. The single crystal X-ray diffraction pattern reveals that the crystals are proteins and the X-ray powder diffraction (XRPD) pattern shows clearly that the crystals forming in PEG₆₀₀₀ and ethanol have different crystal structures.     

Permeation Rate During Reverse Osmosis of Milk Influenced by Osmotic Pressure and Deposit Formation

During the concentration of milk by reverse osmosis deposited layers are formed on the membrane which constitute an additional resistance to permeation. Permeation is seen as mass flow through two resistances, namely laminar flow through the deposited layer and transport by diffusion through the membrane. A comparison of reverse osmosis of pure milk protein solutions and skim milk showed that inorganic ions increased the resistance to flow of the deposited layer considerably. The pressure loss through the deposited layer Δ p_L was found by experiment. By means of regression analysis, mathematical relationships could be obtained to describe the effects of the processing variables on it.     

缸盖的多模型建模及其CAD/CAM/CAE集成技术研究

建立统一的产品定义模型,是实现ＣＡＤ／ＣＡＭ／ＣＡＥ集成的关键,在分析了传统的缸盖开发技术的基础上,提出了一种统一的产品模型定义技术即多模型技术,并利用这一技术对缸盖进行了建模,给出了缸盖的多模型三维实体结构和缸盖开发全过程基于多模型技术的ＣＡＤ／ＣＡＭ／ＣＡＥ集成方案。利用论中的技术,新产品从概念设计到市场只需１０个月的时间。