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排序方式: 共有196条查询结果,搜索用时 203 毫秒
1.
The solubility of aluminum in NaF-AlF3-Al2O3 melts with various additives was found to increase with increasing NaF/AlF3 molar ratio (CR) and increasing temperature and to decrease with additions of A12O3, CaF2, MgF2, and LiF to the melts. With the use of literature data for the activities of NaF and A1F3 in cryolitic melts, three dissolution reaction models were found to give a good fit to the experimental solubility data. According to the most probable of these models the total concentration of dissolved aluminum (aluminum and sodium species) is given by cAl = cNa(diss) + cAlF2- + cAl2F3- + cAl3F4- + cAl4F5- In NaF rich melts, aluminum will dominantly dissolve as sodium, while at cryolite ratios commonly used in aluminum electrowinning (CR = 2.25 to 2.7) the AlF -2 - -ion is the predominant dissolved metal species. Other species (A12F3 -, A13F4-, A14F5-) were found to be of some significance only in melts with high excess A1F3 (CR < 2).  相似文献   
2.
In this work, (a) complexation reaction of zirconium tetra-n-butylate, Zr(OBu n )4, with MAc and different organic acids, (b) the hydrolysis reaction of modified Zr species, and (c) the polymerization reaction of complex products are studied. Zr(OBu n )4 was reacted with different mole ratios of methacrylic acid (MAc) at room temperature and the maximum combination ratio was found to be 1:2 [Zr(OBu n )4:MAc] by FT-IR. The modification of zirconium tetra-n-butylate with the acid mixtures [methacrylic acid-acetic acid (MeCOOH), methacrylic acid-propionic acid (EtCOOH), methacrylic acid-butyric acid (PrCOOH)] was made for a combination ratio of 1:1:1 [MAc:RCOOH:Zr(OBu n )4; R: Me, Et, Pr] and the products were characterized by1H-NMR, FT-IR, and UV spectroscopies. Following their synthesis, hydrolysis of the complexes with various amounts of water and polymerization with benzoyl peroxide were realized. The hydrolysis and polymerization products of the complexes were studied by Karl-Fischer coulometric titration and thermal analysis, respectively. Methyl ethyl ketone(MEK) and chloroform were chosen as solvents.  相似文献   
3.
Various CaCO3-based products are often used in the form of concentrated aqueous dispersions. This study investigates the stabilization of PCC dispersions prepared directly in the mother-liquid after the carbonation of (hydrated) lime through the adsorption of a commercial sodium polyacrylate dispersant. The results demonstrate that the composition of the mother-liquid, particularly the Ca2+ activity, profoundly influences virtually all processes pertinent to dispersion stabilization—from the initial charging of the CaCO3 surface in base PCC dispersions, to the surface charge regulation and dispersion stabilization efficiency of the polyacrylate dispersing agent. Rising prominence of the counterion condensation effects in Ca2+ rich solutions limits the conditions conducive to the surface charge regulation through dispersant adsorption to an optimum pH range of about 8-11. Furthermore, dispersion stability analysis, based on the classical DLVO theory of colloid stability, and corroborated by experimental evidence in the form of particle size distribution analyses, also indicates that optimum stability conditions for such PCC dispersions are established with small dispersant doses (0.25-0.5% per dry weight) in the pH range of about 9-11.  相似文献   
4.
The oxygen reduction reaction (ORR) is essential in research pertaining to life science and energy. In applications, platinum-based catalysts give ideal reactivity, but, in practice, are often subject to high costs and poor stability. Some cost-efficient transition metal oxides have exhibited excellent ORR reactivity, but the stability and durability of such alternative catalyst materials pose serious challenges. Here, we present a facile method to fabricate uniform Co x O y nanoparticles and embed them into N-doped carbon, which results in a composite of extraordinary stability and durability, while maintaining its high reactivity. The half-wave potential shows a negative shift of only 21 mV after 10,000 cycles, only one third of that observed for Pt/C (63 mV). Furthermore, after 100,000 s testing at a constant potential, the current decreases by only 17%, significantly less than for Pt/C (35%). The exceptional stability and durability results from the system architecture, which comprises a thin carbon shell that prevents agglomeration of the Co x O y nanoparticles and their detaching from the substrate.
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6.
Glioblastoma (GBM) is the most common and deadly primary brain tumor in adults. Understanding GBM pathobiology and discovering novel therapeutic targets are critical to finding efficient treatments. Upregulation of the lysosomal cysteine carboxypeptidase cathepsin X has been linked to immune dysfunction and neurodegenerative diseases, but its role in cancer and particularly in GBM progression in patients is unknown. In this study, cathepsin X expression and activity were found to be upregulated in human GBM tissues compared to low-grade gliomas and nontumor brain tissues. Cathepsin X was localized in GBM cells as well as in tumor-associated macrophages and microglia. Subsequently, potent irreversible (AMS36) and reversible (Z7) selective cathepsin X inhibitors were tested in vitro. Selective cathepsin X inhibitors decreased the viability of patient-derived GBM cells as well as macrophages and microglia that were cultured in conditioned media of GBM cells. We next examined the expression pattern of neuron-specific enzyme γ-enolase, which is the target of cathepsin X. We found that there was a correlation between high proteolytic activity of cathepsin X and C-terminal cleavage of γ-enolase and that cathepsin X and γ-enolase were colocalized in GBM tissues, preferentially in GBM-associated macrophages and microglia. Taken together, our results on patient-derived material suggest that cathepsin X is involved in GBM progression and is a potential target for therapeutic approaches against GBM.  相似文献   
7.
?. Karata? 《Vacuum》2004,74(1):45-53
Analysis of Zn/p-Si Schottky diodes (SDs) with high resistivity has been given by admittance spectroscopy. The importance of the series resistance in the determination of energy distribution of interface states and especially their relaxation time in the SDs with high resistivity has been considered. The effect of the series resistance on capacitance-conductance/frequency characteristics has been given by comparing experimental data with theoretical data. The interface state density Nss from the admittance spectroscopy ranges from 1.0×1012 cm−2 eV−1 in 0.720-Ev eV to 2.03×1012 cm−2 eV−1 in 0.420-Ev eV. Furthermore, the relaxation time ranges from 4.20×10−5 s in (0.420-Ev) eV to 3.20×10−4 s in (0.720-Ev) eV. It has been seen that the interface state density has a very small distribution range (1.0-2.03×1012 cm−2 eV−1) that is ascribed to the predominant termination with hydrogen of the silicon surface after HF treatment.  相似文献   
8.
We consider the component testing problem of a series system with redundant subsystems where all components fail exponentially. The main feature of our model is that the component failure rates are not constant parameters, but in fact change in a dynamic fashion with respect to time. The optimal component testing problem is formulated as a semi-infinite linear program. We present an algorithmic procedure to compute optimal test times based on the column generation technique, and illustrate it with numerical results.  相似文献   
9.
An Al/aniline green (AG)/Ga2Te3 device was fabricated and the current-voltage (I-V), capacitance-voltage (C-V) and capacitance-frequency (C-f) characteristics of the device have been investigated at room temperature. The values of the ideality factor, series resistance and barrier height obtained from Cheung and Norde methods were compared, and it was seen that there was an agreement with each other. It was seen that the forward bias current-voltage characteristics at sufficiently large voltages has shown the effect of the series resistance. In addition, it was seen from the C-f characteristics that the values of capacitance have been decreased towards to the high frequencies. The higher values of capacitance at low frequencies were attributed to the excess capacitance resulting from the interface states in equilibrium with the Ga2Te3 that can follow the ac signal.  相似文献   
10.
The purpose of this paper is to investigate frequency-dependent electrical characteristics of the interface states in Sn/p-Si metal semiconductor (MS) Schottky structures. To yield quantitative information about their frequency (f) and voltage (V) dependent characteristics, Sn/p-Si MS structures have been studied by using capacitance (C) and conductance (G/ω) measurements over a wide range of frequencies (50 kHz-1 MHz). The increase in capacitance at lower frequencies is seen as a signature of interface states, and the densities of which are evaluated to be of the order of ≅1010 cm−2 eV−1. The presence of the interfaces states (NSS) is also evidenced as a peak in the capacitance-frequency characteristics that increases in magnitude with decreasing frequencies. Furthermore, the voltage and frequency dependence of series resistance (RS) were calculated from the C-V and G/ω-V measurements and plotted as functions of voltage and frequency. The effect of RS on C and G/ω is found noticeable at high frequencies. The C-V-f and G/ω-V-f characteristics of studied structures show fairly large frequency dispersion especially at low frequencies due to NSS in equilibrium with the semiconductor. The experimental values of interface state densities and series resistance from C-V-f and G/ω-V-f measurements were obtained in the ranges of 3.46 × 1010−1.26 × 109 cm−2 eV−1 and 71.1-57.3 Ω, respectively. Experimental results show that both the RS and NSS values should be taken into account in determining frequency-dependent electrical characteristics.  相似文献   
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