CMOS high linearity PA driver with an on-chip transformer for W-CDMA application

A fully integrated high linearity differential power amplifier driver with an on-chip transformer in a standard 0.13-μm CMOS process for W-CDMA application is presented.The transformer not only accomplishes output impedance matching,but also acts as a balun for converting differential signals to single-ended ones.Under a supply voltage of 3.3 V,the measured maximum power is larger than 17 dBm with a peak power efficiency of 21%.The output power at the 1-dB compression point and the power gain are 12.7 dBm and 13.2 dB,respectively. The die size is 0.91×1.12 mm~2.     

802.11b收发系统中的全集成低功耗发送机设计

基于SMIC 0.18μm CMOS工艺,设计了一个应用于IEEE 802.11b收发系统的全集成低功耗发送机. 直接转换发送机包括两个Chebyshev I型低通滤波器,两个可编程增益放大器(PGA),一个单边带混频器和一个功率预放大器. 发送机以3dB为步长提供32dB增益,其最大输出功耗为-3.4dBm, EVM为6.8%. 工作在1.8V电源电压,发送机的功耗仅57.6mW. 发送机芯片面积为1.6mm×1.6mm.     

低功耗输出脉冲幅度和频谱可调的超宽带发送机设计

A 3-5 GHz low power BPSK modulated impulse radio UWB transmitter is implemented in 0.13μm CMOS technology. In this design the amplitude and spectrum of the output impulse are both tunable to solve the special problem in IR-UWB, where it is difficult to control the spectrum. Measurement results indicate that, by changing the control bits in the gain control circuit and differential circuit, the 3-step peak-to-peak voltage amplitudes are 240, 170 and 115 mV and the center frequency of the impulse can be tuned from 3.2 to 4.1 GHz. A power controlled output buffer is designed to drive the antenna. The total power consumption is only 4.44 mW when transmitting a baseband signal of 100 MHz. The chip area is 1.2 × 1.4 mm^2.     

一种8.75-11.2 GHz适用于802.11a/b/g零中频收发机系统低噪声分数频率综合器

介绍了一种适用于802.11a/b/g零中频接收机的超宽带分数频率综合器。文章详细推导了分数频率综合器相位噪声和杂散的数学模型,并给出了降低噪声和杂散的优化方法。实验结果表明,输出频率二分频后,在4.375GHz时积分噪声低于1度（1kHz 到100MHz);参考频率33-MHz处杂散低于-60dBc。芯片基于标准0.13微米RF CMOS工艺,电路工作电压1.2V,功耗39.6mW。     

A low spur,low jitter 10-GHz phase-locked loop in 0.13-μm CMOS technology

This paper presents a 10-GHz low spur and low jitter phase-locked loop(PLL).An improved low phase noise VCO and a dynamic phase frequency detector with a short delay reset time are employed to reduce the noise of the PLL.We also discuss the methodology to optimize the high frequency prescaler's noise and the charge pump's current mismatch.The chip was fabricated in a SMIC 0.13-μm RF CMOS process with a 1.2-V power supply.The measured integrated RMS jitter is 757 fs(1 kHz to 10 MHz);the phase noise is-89 ...     

A dual-mode analog baseband with digital-assisted DC-offset calibration for WCDMA/GSM receivers

A dual-mode analog baseband with digital-assisted DC-offset calibration(DCOC) for WCDMA/GSM receiver is presented.A digital-assisted DCOC is proposed to solve the DC-offset problem by removing the DC-offset component only.This method has no bandwidth sacrifice.After calibration the measured output residual offset voltage is within 5 mV at most gain settings and the IIP2 is more than 60 dBm.The baseband is designed to be reconfigurable at bandwidths of 200 kHz and 2.1 MHz.Total baseband gain can be programmed from 6 to 54 dB.The chip is manufactured with 0.13μm CMOS technology and consumes 10 mA from a 1.5 V supply in the GSM mode including an on-chip buffer while the core area occupies 1.2 mm~2.     

用于无线局域网的CMOS射频前端发送器

介绍了一种用于802.11b无线局域网的高线性度射频前端发送器的设计与实现。该发送器采用直接转换结构,从而最大程度地减小了所需的片外和片上元件。电路采用0.18μmCMOS工艺实现。发送器包括两个低通滤波器、一个单边带混频器、一个功率预放大器和一个产生正交本振信号的除2分频器。发送器能够以3 dB一级提供12 dB的增益控制,输出1 dB压缩点为7.7 dBm,正常输出功率为2 dBm。整个发送器工作时消耗电流40 mA,工作电压1.8 V,芯片面积(不包括焊盘)为1.8 mm×1.5 mm。     

2.4 GHz、增益可控的CMOS低噪声放大器

介绍了一种基于 0 35 μmCMOS工艺、2 4GHz增益可控的低噪声放大器。从噪声优化、阻抗匹配及增益的角度详细分析了电路的设计方法 ,讨论了寄生效应对低噪声放大器性能的影响。仿真结果表明在考虑了高频寄生参数的情况下 ,低噪声放大器依然具有良好的性能指标 :在 2 4GHz工作频率下 ,3dB带宽为 6 6 0MHz,噪声系数NF为 1 5 8dB ,增益S2 1为 14dB ,匹配参数S11约为 - 13 2dB。     

802.11b收发系统中的全集成低功耗发送机设计

基于SMIC 0.18μm CMOS工艺,设计了一个应用于IEEE 802.11b收发系统的全集成低功耗发送机.直接转换发送机包括两个Chebyshev Ⅰ型低通滤波器,两个可编程增益放大器(PGA),一个单边带混频器和一个功率预放大器.发送机以3dB为步长提供32dB增益,其最大输出功耗为-3.4dBm,EVM为6.8%.工作在1.8V电源电压,发送机的功耗仅57.6mW.发送机芯片面积为1.6mm×1.6mm.     

应用于GSM/EDGE零中频接收机的CMOS射频前端

介绍了一个零中频接收机CMOS射频前端,适用于双带(900MHz/1800 MHz)GSM/EDGE;E系统.射频前端由两个独立的低噪声放大器和正交混频器组成,并且为了降低闪烁噪声采用了电流模式无源混频器.该电路采用0.13 μm CMOS工艺流片,芯片面积为0.9 mm×1.0 mm.芯片测试结果表明:射频前端在90...