Design of High-Quality Pt–CeO2 Composite Anodes Supported by Carbon Black for Direct Methanol Fuel Cell Application

A Pt on nano-sized CeO₂ particles that in turn are supported on carbon black (CB) was synthesized using the co-impregnation method. This potential anode material for fuel cell applications was synthesized in a stepwise process. The pure CeO₂ was synthesized using an ammonium carbonate precipitation method, and the Pt particles dispersed on the CeO₂ in such a way that a uniform dispersion with the CB was obtained (Pt–CeO₂/CB). The electrochemical activity of the methanol (CH₃OH) oxidation reaction on the Pt–CeO₂/CB was investigated using cyclic voltammetry and chronoamperometry experimentation. The onset potential of CH₃OH oxidation reaction on the Pt–CeO₂/CB anode was shifted to a lower potential as compared with that on commercially available Pt–Ru/carbon (C) alloy anode. In addition, the activation energy of the Pt–CeO₂/CB anode was much lower than that of the Pt–Ru/C alloy anode. Moreover, the current density of the Pt–CeO₂/CB anode was much higher than that of the Pt–Ru/C alloy anode at temperatures between 28° and 60°C. These results suggest that the anode performance of the Pt–CeO₂/CB anode at the operating temperature of typical fuel cells (80°C) is superior to that of the more usual Pt–Ru/C alloy anode. Importantly, the rare metal, Ru, is not required in the present anode material and the amount of Pt required is also significantly reduced. As a consequence, we report a promising candidate Pt–CeO₂/CB composite anode for application in the development of direct methanol fuel cells.     

Frictional anisotropy of oriented carbon nanotube surfaces

This report examines highly anisotropic tribological behavior of multi-walled nanotube films oriented in mutually orthogonal directions. The average values of coefficient of friction varied from extremely high values (=0.795) for vertically aligned nanotubes grown on rigid substrates to very low values (=0.090) for nanotubes dispersed flat on the same substrates. The results were insensitive to humidity, in contrast to graphite materials, and indicate that nanotubes could be utilized as both low and high frictional surfaces.     

Investigation on DC/RF Performance of LG = 19 nm Heterogeneous Integrated Ga0.15In0.85As/InAs/Ga0.15In0.85As Composite Channel InP HEMT on Silicon Substrate for Future Beyond 5G and Quantum Computing Applications

Silicon - The RF/DC performances of LG = 19 nm heterogeneous integrated Ga0.15In0.85As/InAs/Ga0.15In0.85As composite channel based InP HEMT (high electron mobility transistor)...     

Sintering of Confined Silica in Oxidized Silicon Particles

We observed electron-beam-induced sintering of amorphous silica in oxidized submicrometer silicon particles and analyzed the nature of mass transport in linear and triangular particle assemblies. The movement of silica around the rigid crystalline cores occurs rapidly and fills the necks, but the relative core positions in the sintered product depends on the initial geometry of the confined oxide. However, a thin layer of silica remains stable against the flow.     

Synthesis of Millimeter‐Scale Transition Metal Dichalcogenides Single Crystals

The emergence of semiconducting transition metal dichalcogenide (TMD) atomic layers has opened up unprecedented opportunities in atomically thin electronics. Yet the scalable growth of TMD layers with large grain sizes and uniformity has remained very challenging. Here is reported a simple, scalable chemical vapor deposition approach for the growth of MoSe₂ layers is reported, in which the nucleation density can be reduced from 10⁵ to 25 nuclei cm^?2, leading to millimeter‐scale MoSe₂ single crystals as well as continuous macrocrystalline films with millimeter size grains. The selective growth of monolayers and multilayered MoSe₂ films with well‐defined stacking orientation can also be controlled via tuning the growth temperature. In addition, periodic defects, such as nanoscale triangular holes, can be engineered into these layers by controlling the growth conditions. The low density of grain boundaries in the films results in high average mobilities, around ≈42 cm² V^?1 s^?1, for back‐gated MoSe₂ transistors. This generic synthesis approach is also demonstrated for other TMD layers such as millimeter‐scale WSe₂ single crystals.     

Reversible Formation of g‐C3N4 3D Hydrogels through Ionic Liquid Activation: Gelation Behavior and Room‐Temperature Gas‐Sensing Properties

Many unique properties arise when the 3D stacking of layered materials is disrupted, originating nanostructures. Stabilization, and further reorganization of these individual layers into complex 3D structures, can be essential to allow these properties to persist in macroscopic systems. It is demonstrated that a simple hydrothermal process, assisted by ionic liquids (ILs), can convert bulk g‐C₃N₄ into a stable hydrogel. The gelation occurs through delamination of the layered structure, driven by particular interactions between the IL and the carbon nitride sheets, forming an amphiphilic foam‐like network. This study employs spectroscopic and computational tools to unravel the gelation mechanism, and provides a rational approach toward the stabilization of 2D materials in hydrogels. The solution‐processable hydrogels can also be used as building blocks of complex devices. Chemiresistive gas sensors employing g‐C₃N₄ 3D hydrogels exhibit superior response at room temperature, enabling effective gas sensing under low power conditions.