A Au82Si18 liquid metal field-ion emitter for the production of Si ions: fundamental properties and mechanisms

Focused silicon beams are useful for direct write applications, e.g., lithography on silicon without the undesirable effect of substrate contamination. However, since pure silicon is not amenable to liquid metal ion source (LMIS) manufacture, a suitable alloy containing silicon has to be produced. This paper covers almost all fundamental aspects of a Au82Si18 eutectic, including the most detailed beam mass spectra reported to date of a AuSi source. A finding worthy of note in this investigation, manifested in the behaviour of the ion extraction voltage with temperature, is the abnormal behaviour of the surface tension coefficient of the alloy with temperature. An important deduction from this work, however, concerns the mechanisms responsible for the creation of doubly charged ions: reasons of self-consistency indicate that while Si2+ is directly field evaporated, Au2+ must form by the post-ionization of Au+. Finally, two different mechanisms seem to co-exist, as far as the production of cluster ions is concerned. While for cluster ions containing only a few atoms some sort of surface field-ionization mechanism might be responsible for their creation, for larger clusters, a droplet break-up mechanism, possibly by ion capture, seems very likely.     

Swift-heavy-ion-induced shaping of spherical Ge nanoparticles into disks and rods

The work reports on experimental features and theoretical studies of swift-heavy-ion-induced shaping of Ge nanospheres into disks. A stack of alternating Ge and SiO₂ layers was sputtered on an oxidized Si wafer. The Ge layer thicknesses varied from 2.5 to 7.5 nm. Thermal treatment above the melting temperature of Ge transformed each Ge layer into a layer of Ge nanospheres. With growing Ge layer thickness the mean diameter increases from 8 to 37 nm. Irradiation with low fluences (～10¹⁴ cm^?2) of 38 MeV I⁷⁺ shaped medium-sized Ge nanospheres into disks, whereas smaller ones became rod-like and larger ones remained unchanged. At higher fluences, the larger Ge nanospheres shrink due to Ge loss and shape into disks too. A new model is presented and atomistic Monte-Carlo simulations are shown which describe the shaping evolution and the size thresholds for shaping quantitatively. The volume change of Ge upon melting has been identified as driving force.     

Characterization and local magnetic modification of ion irradiated GaMnAs

We study the influence of ion irradiation on magnetic, magneto-transport and structural properties in Ga_0.94Mn_0.06As films. The carrier concentration is accurately controlled by defects introduced via ion irradiation. Magnetic properties strongly depend on the hole concentration. We present the modification of coercivity, magnetic anisotropy, and magnetotransport properties during such a procedure. By X-ray diffraction and Raman spectra, we exclude the effects from structural changes. Using lithograph made resist mask, one can realize planar local structures with different magnetic properties, indicating the promising future of ion irradiation for spintronics device fabrication.     

GaBi alloy liquid metal ion source for microelectronics research

A GaBi alloy liquid metal ion source has been studied. From an analysis of the source mass spectra as a function of emission current, a mechanism is suggested for the production of single- and double-charged ions. There is good agreement with the results of Swanson's investigations of a pure Bi source.     

Planar optical waveguides in Bi4Ge3O12 crystal fabricated by swift heavy-ion irradiation

We report on the fabrication of the planar waveguides in Bi4Ge3O12 crystal by using 17 MeV C5+ or O5+ ions at a fluence of 2×10(14) ions/cm2. The reconstructed refractive index profiles of the waveguides produced by either C5+ or O5+ irradiation are the "well" + "barrier" pattern distribution. The two-dimensional modal profiles of the planar waveguides, measured by using the end-coupling arrangement, are in good agreement with the simulated modal distributions. After thermal annealing treatment at 260 °C for 30 min, the propagation loss for C5+ and O5+ irradiated waveguides could be reduced down to ~1.1 and ~4.8 dB/cm, respectively, which exhibit acceptable guiding qualities for potential applications in integrated optics.     

Possibility of Silicon Nanocages as Anode Electrodes in Metal-Ion Batteries: Computational Examination

Silicon - Potential of silicon nanocages (Sin, n = 20, 24, 28, 32, 36, 40, 44, 48, 60, 70, 80 and 90) as anodes in batteries are examined. The thermal stability, ionization potentials,...