Mass transfer in polycrystalline ytterbium monosilicate under oxygen potential gradients at high temperatures

Mass transfer in polycrystalline Yb₂SiO₅ wafers with precise composition control was evaluated and analyzed by oxygen permeation experiments at high temperatures using an oxygen tracer. Oxygen permeation proceeded due to mutual grain boundary diffusion of oxide ions and Yb ions without synergistic effects such as acceleration or suppression. The oxygen shielding properties of Yb₂SiO₅ were compared with those of the other line compounds such as Yb₂Si₂O₇ and Al₂O₃ based on the determined mass transfer parameters. It was found that the more preferentially an oxide ion diffuses in the grain boundary compared to the interior of the grain, the greater the effect of suppressing the movement of the oxide ion by applying an oxygen potential gradient becomes.     

Role of Metabolism in Bone Development and Homeostasis

Carbohydrates, fats, and proteins are the underlying energy sources for animals and are catabolized through specific biochemical cascades involving numerous enzymes. The catabolites and metabolites in these metabolic pathways are crucial for many cellular functions; therefore, an imbalance and/or dysregulation of these pathways causes cellular dysfunction, resulting in various metabolic diseases. Bone, a highly mineralized organ that serves as a skeleton of the body, undergoes continuous active turnover, which is required for the maintenance of healthy bony components through the deposition and resorption of bone matrix and minerals. This highly coordinated event is regulated throughout life by bone cells such as osteoblasts, osteoclasts, and osteocytes, and requires synchronized activities from different metabolic pathways. Here, we aim to provide a comprehensive review of the cellular metabolism involved in bone development and homeostasis, as revealed by mouse genetic studies.     

Capacity enhancement of cellular CDMA by traffic-based control ofspeech bit rate

Variable rate speech coding is now recognized as an important system component for high-capacity cellular networks because it exploits speech statistics to reduce the average bit rate, which results in reduced interference and increased capacity. Once a variable rate capability is available, an additional capacity enhancement can be achieved by introducing network control of the user bit rate in response to changing traffic levels. We introduce the concept of network control of rate and propose a particular network-control method for code-division multiple access (CDMA) systems. Based on an M/M/∞//M queueing model applied to a cell under heavy traffic conditions and a new performance measure called averaged speech quality, we obtain simulation results to demonstrate how network control of rate can achieve improved speech quality or increased capacity for a given quality objective     

Up- and down-regulation of calpain inhibitor polypeptide, calpastatin, in postischemic hippocampus

A dental student developed swelling of the lips and peri-oral urticaria, immediately after placement of a dental rubber dam during a chairside demonstration of clinical dentistry. A provisional diagnosis of a Type I hypersensitivity reaction to natural rubber latex was made and an appointment organised for specialist investigations. The student reported an atopic history and allergy to peanuts. A Radioallergosorbent Test (RAST), to measure Ig-E antibodies to latex, was positive. The dental student was given advice concerning the avoidance of natural rubber latex. Dental staff must be aware of potentially serious reactions to natural rubber latex in the dental surgery.     

Measurement of Thermal Diffusivity at Low Temperatures Using an Optical Reflectivity Technique

An experimental arrangement has been developed for measuring the transient temperature responses and the thermal diffusivities of foil materials in the range of 10 to 300K by using the optical reflectivity technique. The cryogenic system with optical windows is designed to provide temperatures from 10 to 300 K. The front surface of a foil specimen is heated by a pulsed Nd:YAG laser. In situ measurement of the reflectivity of a continuous-wave He–Ne laser at the rear surface is conducted on the microsecond time scale. Using the temperature dependence of reflectivity, the transient temperature response is deduced. The thermal diffusivity is obtained by fitting Parker's formulae to the experimental data on temperature rise. Stainless-steel foils are chosen as samples and are studied in the region from 10 to 300 K. The accuracy is examined by comparing the present results with the theoretical temperature responses and thermal diffusivity data from the literature. Good agreement is observed.     

Photocatalytic Property and Electronic Structure of Lanthanide-based Oxysulfides

Lanthanide-based oxysulfides and sulfide, LnTaO_3.5S_0.5, Ln₁₀OS₁₄ (Ln = La, Pr, Nd, Sm) and La₄In₅S₁₃, were successively synthesized by sulfurization in a flowing H₂S. The sulfurization decreased the band-gap energies from >4 eV to <3eV, because of the formation of occupied S3p orbitals on the top of valence band. In accordance with the small band gap, the H₂ evolution from a 0.01 M Na₂S and 0.01 M Na₂SO₃ solution system was observed under irradiation of light up to >500 nm. The rate of H₂ evolution under light irradiation of >500 nm increased in the order of Ni/LaTaO_3.5S_0.5 < Ru/La₁₀OS₁₄ < Pt/La₄In₅S₁₃.     

State- and time-dependent routing in the NTT network

The purpose of state- and time-dependent routing (STR) is to achieve high performance despite unpredictable real-time traffic fluctuations, with minimum changes to existing switching software and operations systems. STR uses an appropriate combination of the two kinds of control, centralized and distributed. The article gives an overview of STR and its advanced call-level routing, describes the current STR network and the performance of STR with two examples from the NTT network, and addresses a dimensioning method for STR     

Torsional vibrations of quartz crystal beams

An exact solution of a partial differential equation including elastic compliance constant s'₅₆, with respect to stress function ψ has been found for torsional modes of vibration of an arbitrary (singly, doubly, triply) rotated beam with a pair of parallel free edges. The solution is obtained by relaxing the condition that the edge planes are perpendicular to the main faces of the beam. That is, the edges are off perpendicular by the angle Θ=arctan(-s'₅₆ /8'₅₅). The exact solution can reduce the difference of the calculated and measured values for a thickness-to-width ratio which gives the first-order temperature coefficient α=0. Also, a comparatively large inclination of the edge cuts is required to reduce the unwanted complicated mode shapes to simple ones     

Formation of low-resistivity poly-Si and SiNx films by Cat-CVD for ULSI application

In this paper, bulk-Si metal–oxide–semiconductor field effect transistors (MOSFETs) are fabricated using the catalytic chemical vapor deposition (Cat-CVD) method as an alternative technology to the conventional high-temperature thermal chemical vapor deposition. Particularly, formation of low-resistivity phosphorus (P)-doped poly-Si films is attempted by using Cat-CVD-deposited amorphous silicon (a-Si) films and successive rapid thermal annealing (RTA) of them. Even after RTA processes, neither peeling nor bubbling are observed, since hydrogen contents in Cat-CVD a-Si films can be as low as 1.1%. Both the crystallization and low resistivity of 0.004 Ω·cm are realized by RTA at 1000 °C for only 5 s. It is also revealed that Cat-CVD SiN_x films prepared at 250 °C show excellent oxidation resistance, when the thickness of films is larger than approximately 10 nm for wet O₂ oxidation at 1100 °C. It is found that the thickness required to stop oxygen penetration is equivalent to that for thermal CVD SiN_x prepared at 750 °C. Finally, complementary MOSFETs (CMOSs) of single-crystalline Si were fabricated by using Cat-CVD poly-Si for gate electrodes and SiN_x films for masks of local oxidation of silicon (LOCOS). At 3.3 V operation, less than 1.0 pA μm⁻¹ of OFF leakage current and ON/OFF ratio of 10⁷–10⁸ are realized, i.e. the devices can operate similarly to conventional thermal CVD process.