Effect of substrate bias on the properties of plasma deposited organosilicone (pp-HMDSN) thin films

Organosilicone thin films have been deposited by plasma polymerization (pp) in a plasma enhanced chemical vapor deposition (PECVD) system using hexamethyldisilazane (HMDSN:C6H19Si2N) as a monomer precursor, at different biases of the stainless-steel substrate holder. The substrate bias affected film thickness, surface morphology, chemical composition and photoluminescence (PL) emission. For a negatively biased substrate, it is found that the film thickness is the minimum, while the porosity and PL emission are the maximum. For a positively biased substrate, the thickness and the ratio of Si/N are the maximum which correspond to a blue shift of the PL emission in comparison with the case of non-biased grounded substrate. In addition, the characterization of the plasma using a single cylindrical Langmuir probe has been performed to obtain information about both the electron density and the positive ion energy, where it can be concluded that the ion energy plays a major role in determining film thickness.     

Effect of Atmospheric Ageing on the Properties of Organosilicon (Pp-HMDSO) Thin Films

Silicon - This study reports the effect of ageing on plasma polymerized hexamethyldisiloxane (pp-HMDSO) thin films properties during 90 days storage in the atmosphere. The monitoring of...     

Hydrogenated Silicon Carbonitride Thin Film Nanostructuring Using SF6 Plasma: Structural and Optical Analysis

Silicon - Hydrogenated silicon carbonitride thin films have been deposited on silicon substrates in a plasma enhanced chemical vapor deposition (PECVD) system using hexamethyldisilazane (HMDSN:...