Enhanced visible-light photoresponse of DVT-grown Ni-doped SnSe crystal

Semiconductors with the group of IV-VI are key components of future photonics technology due to their unique properties. In the present study, we investigated the influence of nickel inclusion on the structural and electrical responsiveness of SnSe-layered crystals produced through direct vapour transport. The elemental composition, stoichiometry of grown crystals and the orthorhombic structure were investigated by EDAX and XRD analysis. The phase and high crystallinity of produced compounds are revealed by scanning electron microscopy and the SAED pattern of transmission electron microscopy. Nickel-doped SnSe photodetector exhibited a photocurrent of 53.83 nA, which is six times higher compared to the pristine SnSe. Moreover, the pristine and nickel-doped SnSe demonstrated excellent photoresponse behaviour under visible light. Additionally, important photodetection characteristics such as photoresponsivity (R), spectral detectivity (D), rise time and decay time are assessed. Our findings contribute to a better understanding of SnSe and Ni-doped SnSe-based photodetection capabilities which open up the future gateway for SnSe-based optoelectronic devices.

     

Study of Collective Excitations in Cu60Zr20Hf10Ti10 Quaternary Bulk Metallic Glass

Glass Physics and Chemistry - The vibrational dynamics of quaternary Cu60Zr20Hf10Ti10 bulk metallic glass (BMG) in terms of the longitudinal and transverse phonon Eigen frequencies of the localized...     

RA-ECDM of Silicon Wafers Using Taguchi’s Methodology and Machine Learning Algorithms

Silicon - As a prominent machining process, electrochemical discharge machining (ECDM) is used to process materials that are both fragile and difficult to cut. The growing use of this method for...     

Electronic Noise Analysis of Source-Engineered Phosphorene/Si Heterojunction Dopingless Tunnel-FET

Silicon - The implementation of two-dimensional layered material in the source-region of a Si-based tunnel field-effect transistors (T-FETs) offers some remarkable properties viz. ultralow power...