Intelligent Machine Learning with Metaheuristics Based Sentiment Analysis and Classification

Sentiment Analysis (SA) is one of the subfields in Natural Language Processing (NLP) which focuses on identification and extraction of opinions that exist in the text provided across reviews, social media, blogs, news, and so on. SA has the ability to handle the drastically-increasing unstructured text by transforming them into structured data with the help of NLP and open source tools. The current research work designs a novel Modified Red Deer Algorithm (MRDA) Extreme Learning Machine Sparse Autoencoder (ELMSAE) model for SA and classification. The proposed MRDA-ELMSAE technique initially performs preprocessing to transform the data into a compatible format. Moreover, TF-IDF vectorizer is employed in the extraction of features while ELMSAE model is applied in the classification of sentiments. Furthermore, optimal parameter tuning is done for ELMSAE model using MRDA technique. A wide range of simulation analyses was carried out and results from comparative analysis establish the enhanced efficiency of MRDA-ELMSAE technique against other recent techniques.     

A Novel Compact Highly Isolated UWB MIMO Antenna with WLAN Notch

This paper presents a compact Multiple Input Multiple Output (MIMO) antenna with WLAN band notch for Ultra-Wideband (UWB) applications. The antenna is designed on 0.8 mm thick low-cost FR-4 substrate having a compact size of 22 mm × 30 mm. The proposed antenna comprises of two monopole patches on the top layer of substrate while having a shared ground on its bottom layer. The mutual coupling between adjacent patches has been reduced by using a novel stub with shared ground structure. The stub consists of complementary rectangular slots that disturb the surface current direction and thus result in reducing mutual coupling between two ports. A slot is etched in the radiating patch for WLAN band notch. The slot is used to suppress frequencies ranging from 5.1 to 5.9 GHz. The results show that the proposed antenna has a very good impedance bandwidth of |S11| < −10 dB within the frequency band from 3.1–14 GHz. A low mutual coupling of less than −23 dB is achieved within the entire UWB band. Furthermore, the antenna has a peak gain of 5.8 dB, low ECC < 0.002 and high Diversity Gain (DG > 9.98).     

Modeling Rogowski Coils for Monitoring Surge Arrester Discharge Currents

Rogowski coils (RCs) are widely used to measure power or high frequency currents based on their design. In this paper, two types of RCs that are circular (traditional) and cylindrical shapes wound using wire covered by varnish are constructed. This construction is carried out to be suitable for monitoring the discharge current of the surge arrester installed in the distribution system. Concerning high frequency RC modeling for both types considering transfer function is introduced. Self-integrating for both types is attained. Therefore, the experimental tests using function generator for both coils are carried out to identify the parameters of the transfer function representing the introduced model. The measured signals for current and induced voltages are denoised for the parameter identification process. The denoised process is achieved using the MATLAB code ‘wdenoise’ while the parameters are estimated using the system identification toolbox. Verification of the proposed model is achieved using experimental results for the two coils. The sensitivity of the two coils is investigated based on the induced output voltage. The application concerning the two coils for monitoring the discharge current of the surge arrester is done. The results confirm the accuracy of the introduced RC model, as well as the performance of the cylindrical shape, is better than the traditional one. The simulation is carried out using MATLAB and ATPDraw programs.     

A FinBOX Based Ge FinEHBTFET: Design and Investigation

Silicon - In this work, we propose a Germanium Fin Buried Oxide (FinBOX) Fin Electron-Hole Bilayer Tunnel FET (FBF-EHBTFET) structure. The proposed structure eliminates the gated underlaps and...     

Germanium Source Metal Drain Tunnel FET with Dual Dielectric Underlap

Silicon - In this paper, we propose, design and simulate a new double gate (DG) tunnel field effect transistor (TFET), using germanium (Ge) source, dual dielectric gate oxide, gate/drain underlap...