Some Molecular and Cellular Stress Mechanisms Associated with Neurodegenerative Diseases and Atherosclerosis

Chronic stress is a combination of nonspecific adaptive reactions of the body to the influence of various adverse stress factors which disrupt its homeostasis, and it is also a corresponding state of the organism’s nervous system (or the body in general). We hypothesized that chronic stress may be one of the causes occurence of several molecular and cellular types of stress. We analyzed literary sources and considered most of these types of stress in our review article. We examined genes and mutations of nuclear and mitochondrial genomes and also molecular variants which lead to various types of stress. The end result of chronic stress can be metabolic disturbance in humans and animals, leading to accumulation of reactive oxygen species (ROS), oxidative stress, energy deficiency in cells (due to a decrease in ATP synthesis) and mitochondrial dysfunction. These changes can last for the lifetime and lead to severe pathologies, including neurodegenerative diseases and atherosclerosis. The analysis of literature allowed us to conclude that under the influence of chronic stress, metabolism in the human body can be disrupted, mutations of the mitochondrial and nuclear genome and dysfunction of cells and their compartments can occur. As a result of these processes, oxidative, genotoxic, and cellular stress can occur. Therefore, chronic stress can be one of the causes forthe occurrence and development of neurodegenerative diseases and atherosclerosis. In particular, chronic stress can play a large role in the occurrence and development of oxidative, genotoxic, and cellular types of stress.     

Continuous physical activity recognition for intelligent labour monitoring

Multimedia Tools and Applications - The paper addresses the problem of human activity recognition based on the data from wearable sensors. Human activity recognition depends on a wide context of...     

Characteristics of planar diodes based on heavily doped GaAs/AlAs superlattices in the terahertz frequency region

Characteristics of ohmic InGaAs contacts in planar diodes based on semiconductor superlattices with a small-area active region (1–10 μm²) are studied. The diodes were formed on the basis of short (18 or 30 periods) heavily doped (10¹⁸ cm⁻³) GaAs/AlAs superlattices with a miniband width of 24.4 meV. The reduced resistance of the ohmic contact was equal to 2×10⁻⁷ Ω cm² at room temperature. It is shown that the properties of fabricated planar diodes make it possible to use these diodes later on in semiconductor devices that operate in the terahertz frequency region in a wide temperature range (4–300 K). __________ Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 38, No. 9, 2004, pp. 1141–1146. Original Russian Text Copyright ? 2004 by Pavel’ev, Demarina, Koshurinov, Vasil’ev, Semenova, Zhukov, Ustinov.     

Photoemission of polarized electrons from InAlGaAs/GaAs superlattices with minimum conduction band offsets

Photoemission of polarized electrons from heterostructures based on InAlGaAs/GaAs superlattices with minimum conduction-band offsets is investigated. The comparison of the excitation energy dependence of the photoemission polarization degree with the calculated spectra make it possible to determine the polarization losses at different stages of the photoemission. A maximum polarization of P = 91% and a quantum yield of 0.14% are close to the best results obtained for photocathodes on the basis of strained semiconductor superlattices.     

Measurement of the delayed-neutron yields in the fission of233U,236U,237Np,240Pu,and241Pu by neutrons from the spectrum of a fast reactor

Translated from Atomnaya Énergiya, Vol. 66, No. 2, pp. 100–103, February, 1989.     

Continuous-wave lasing of single-mode metamorphic quantum dot lasers for the 1.5-μm spectral region

Lasers based on InAs/InGaAs quantum dots grown on metamorphic (In,Ga,Al)As layers deposited by MBE on GaAs substrates exhibited emission near 1.5 μm with a differential quantum efficiency of about 50%. The narrow-stripe lasers operate in a single transverse mode and withstand continuous current density above 20 kA cm^?2 without significant degradation. A maximum continuous-wave output power of 220 mW is obtained. Neither current nor beam filamentation was observed up to the highest pumping levels.     

The stress state of nonsymmetrically loaded shells of revolution with point support

The authors propose an approach to solving problems of deformation of nonsymmetrically loaded shells of revolution whose boundary contours are supported in the general case at individual points. The problem is substituted by a problem with the boundary conditions of the same type around the entire contour which contain unknown parameters determined from the condition of converting to zero the displacements at the support points. Consequently, the problem is reduced to integrating systems of conventional differential equations and solving a system of algebraic equations. The solution of a problem of the stressed state of a hyperbolic shell, supported at four points at the contour, is presented. Translated from Problemy Prochnosti, No. 8, pp. 31–35, August, 1992.     

Crack redirection with thermal secondary loading

In the current paper crack redirection due to a strategic placing of a heat source in the vicinity of a crack tip is studied. Analysis suggests that for PMMA and considered temperature range the only factor responsible for the deviation of crack trajectory is thermal stress. The simulation of crack growth in PMMA under external tension and secondary heat loading shows that a moving heat source in the vicinity of a crack tip can serve as a pointer for the crack trajectory. In highly conductive materials, redirection can be possibly effected with low-power thermal dipoles.     

Temperature dependence of the effective coefficient of Auger recombination in 1.3 μm InAs/GaAs QD lasers

Semiconductor laser heterostructures containing five and ten sheets of InAs/GaAs QDs on GaAs substrates, with an emission wavelength of ～1.3 μm, have been studied. Dependences of the nonradiative lifetime and effective Auger coefficient in QDs are obtained from an analysis of temperature and current dependences of the efficiency of spontaneous radiative recombination. The zero-threshold Auger recombination channel in QDs is shown to dominate at low (below 200 K) temperature, whereas at higher temperatures the quasithreshold channel becomes dominant. The effective 3D Auger coefficient is estimated in the approximation of a spherical QD, and a good agreement with the experimental data is obtained.     

Hemi- and Homozygous Loss-of-Function Mutations in DSG2 (Desmoglein-2) Cause Recessive Arrhythmogenic Cardiomyopathy with an Early Onset

About 50% of patients with arrhythmogenic cardiomyopathy (ACM) carry a pathogenic or likely pathogenic mutation in the desmosomal genes. However, there is a significant number of patients without positive familial anamnesis. Therefore, the molecular reasons for ACM in these patients are frequently unknown and a genetic contribution might be underestimated. Here, we used a next-generation sequencing (NGS) approach and in addition single nucleotide polymor-phism (SNP) arrays for the genetic analysis of two independent index patients without familial medical history. Of note, this genetic strategy revealed a homozygous splice site mutation (DSG2–c.378+1G>T) in the first patient and a nonsense mutation (DSG2–p.L772X) in combination with a large deletion in DSG2 in the second one. In conclusion, a recessive inheritance pattern is likely for both cases, which might contribute to the hidden medical history in both families. This is the first report about these novel loss-of-function mutations in DSG2 that have not been previously identi-fied. Therefore, we suggest performing deep genetic analyses using NGS in combination with SNP arrays also for ACM index patients without obvious familial medical history. In the future, this finding might has relevance for the genetic counseling of similar cases.