On the Growth of Thin-Film AlGaN/GaN Epitaxial Heterostructures on Hybrid Substrates Containing Layers of Silicon Carbide and Porous Silicon

Semiconductors - Abstract—In our work, we carry out a structural-spectroscopic study of AlGaN/GaN epitaxial layers grown by molecular-beam epitaxy with nitrogen-plasma activation on a hybrid...     

Low-Temperature Growth of the CdS Cubic Phase by Atomic-Layer Deposition on SiC/Si Hybrid Substrates

Technical Physics Letters - A new method for epitaxial growth of cadmium sulfide (CdS) films in the metastable cubic phase by atomic-layer deposition on silicon substrates with a buffer layer of...     

HRTEM observation of the monoclinic-to-tetragonal m-t) phase transition in nanocrystalline ZrO2

The orientation relations m(100) || t(001), m[001] || t[110]; m(011) || t(100), m[100] || t[001]; m(100) || t(110), m[001] || t[001]; m(013) || t(116), m[001] || t[001] (indices for the primitive tetragonal cell) have been found between the tetragonal (t) and monoclinic (m) domains during the electron irradiation-induced m-t phase transition observed in-situ with HREM within isolated zirconia nanoparticles. Geometric models of the m-t interfaces are proposed.     

Directions in processing of Tengizsk crude

Translated from Khimiya i Tekhnologiya Topliv i Masel, No. 5, pp. 2–3, May, 1992.     

Macroscopic model for multispecies ion-exchange kinetics

A model for multispecies ion-exchange kinetics based on the Nernst-Planck equation is suggested. It is analyzed in comparison with the “locally-determinate” model described by Hwang and Helfferich [1]. The model makes possible simple computation. The conditions for the occurrence of unusual kinetic curves with a maximum are clarified. The proposed model is developed for different types of kinetic problems and verified by the experimental investigation of a kinetics in ternary systems.     

Pressureless Sintering of Si3N4 Ceramic Using AlN and Rare-Earth Oxides

Using intermediate, liquid-forming compositions in the (Y,La)₂O₃-AlN system as additives, fully dense Si₃N₄ ceramics with high strength at high temperature have been obtained by pressureless sintering. The ceramics contain rod-shaped β-Si₃N₄ with M' or K' solid solutions as grain-boundary phases. The strength of these ceramics is 1150 MPa at 1200°C, and the room-temperature toughness is maintained at }7 MPa·m^1/2. Phase relations that are pertinent to the new additive compositions are delineated to rationalize their beneficial effects on sinterability and mechanical properties.     

SOM‐based projection module for mobile displays

Abstract— The development of a compact, efficient VGA projection module to be embedded in mobile devices is reported. The design incorporates laser/laser diode (LD) light sources, Schlieren optics, and a one‐dimensional diffractive spatial optical modulator (SOM). During development, the optical parameters were determined and the relationships between the parameters to optimize the optical specifications were derived. The resulting optimized specifications enable us to manufacture two types of optical modu les as compact as 13 cc and with as little as 10% speckle contrast ratio.     

SearchFill: A stochastic optimization code for detecting atomic vacancies in crystalline and non-crystalline systems

We present an implementation of a stochastic optimization algorithm applied to location of atomic vacancies. Our method labels an empty point in space as a vacancy site, if the total spatial overlap of a “virtual sphere”, centered around the point, with the surrounding atoms (and other vacancies) falls below a tolerance parameter. A Metropolis-like algorithm displaces the vacancies randomly, using an “overlap temperature” parameter to allow for acceptance of moves into regions with higher overlap, thus avoiding local minima. Once the algorithm has targeted a point with low overlap, the overlap temperature is decreased, and the method works as a steepest descent optimization.Our method, with only two free parameters, is able to detect the correct number and coordinates of vacancies in a wide spectrum of condensed-matter systems, from crystals to amorphous solids, in fact in any given set of atomic coordinates, without any need of comparison with a reference initial structure.