High resistivity measurement of SiC wafers using different techniques

To establish fast, nondestructive, and inexpensive methods for resistivity measurements of SiC wafers, different resistivity-measurement techniques were tested for characterization of semi-insulating SiC wafers, namely, the four-point probe method with removable graphite contacts, the van der Pauw method with annealed metal and diffused contacts, the current-voltage (I-V) technique, and the contactless resistivity-measurement method. Comparison of different techniques is presented. The resistivity values of the semi-insulating SiC wafer measured using different techniques agree fairly well. As a result, application of removable graphite contacts is proposed for fast and nondestructive resistivity measurement of SiC wafers using the four-point probe method. High-temperature van der Pauw and room-temperature Hall characterization for the tested semi-insulating SiC wafer was also obtained and reported in this work.     

A note on the variance of rank-based selection strategies for genetic algorithms and genetic programming

This paper evaluates different forms of rank-based selection that are used with genetic algorithms and genetic programming. Many types of rank based selection have exactly the same expected value in terms of the sampling rate allocated to each member of the population. However, the variance associated with that sampling rate can vary depending on how selection is implemented. We examine two forms of tournament selection and compare these to linear rank-based selection using an explicit formula. Because selective pressure has a direct impact on population diversity, we also examine the interaction between selective pressure and different mutation strategies.     

Robust Stability Conditions for a Family of Linear Discrete-Time Systems Subjected to Uncertainties

Automation and Remote Control - Robust stability conditions are established for a family of linear discrete-time systems subjected to uncertainties. The traditional approach, which involves the...     

Effect of photoaligning azo dye structure on liquid crystal anchoring energy

A method of controlling anchoring energy of surface interaction of liquid crystal photoaligning substances is considered to enhance the liquid crystal display performances. An important parameter of the dye's molecular structure that determines the ratio of polar and azimuthal anchoring energy is the ability to form dimers. The values of dimerization thermodynamic potentials have been found. The probability of the formation of dye molecules dimers is evaluated. The bonds conjugation transfer via intermolecular hydrogen bond is revealed, and anisotropy of polarizability of the hydrogen bond is evaluated. The effect of dimerization on polar and azimuthal anchoring energy of liquid crystal — azo dye system — is shown.     

Petersen’s lemma on matrix uncertainty and its generalizations

Various generalizations and refinements are proposed for a well-known result on robust matrix sign-definiteness, which is extensively exploited in quadratic stability, design of robustly quadratically stabilizing controllers, robust LQR-problem, etc. The main emphasis is put on formulating the results in terms of linear matrix inequalities.     

Advanced Characterization and Optimization of NiOx:Cu-SAM Hole-Transporting Bi-Layer for 23.4% Efficient Monolithic Cu(In,Ga)Se2-Perovskite Tandem Solar Cells

The performance of five hole-transporting layers (HTLs) is investigated in both single-junction perovskite and Cu(In, Ga)Se₂ (CIGSe)-perovskite tandem solar cells: nickel oxide (NiO_x,), copper-doped nickel oxide (NiO_x:Cu), NiO_x+SAM, NiO_x:Cu+SAM, and SAM, where SAM is the [2-(3,-6Dimethoxy-9H-carbazol-9yl)ethyl]phosphonic acid (MeO-2PACz) self-assembled monolayer. The performance of the devices is correlated to the charge-carrier dynamics at the HTL/perovskite interface and the limiting factors of these HTLs are analyzed by performing time-resolved and absolute photoluminescence ((Tr)PL), transient surface photovoltage (tr-SPV), and X-ray/UV photoemission spectroscopy (XPS/UPS) measurements on indium tin oxide (ITO)/HTL/perovskite and CIGSe/HTL/perovskite stacks. A high quasi-Fermi level splitting to open-circuit (QFLS-V_oc) deficit is detected for the NiO_x-based devices, attributed to electron trapping and poor hole extraction at the NiO_x-perovskite interface and a low carrier effective lifetime in the bulk of the perovskite. Simultaneously, doping the NiO_x with 2% Cu and passivating its surface with MeO-2PACz suppresses the electron trapping, enhances the holes extraction, reduces the non-radiative interfacial recombination, and improves the band alignment. Due to this superior interfacial charge-carrier dynamics, NiO_x:Cu+SAM is found to be the most suitable HTL for the monolithic CIGSe-perovskite tandem devices, enabling a power-conversion efficiency (PCE) of 23.4%, V_oc of 1.72V, and a fill factor (FF) of 71%, while the remaining four HTLs suffer from prominent V_oc and FF losses.     

Suppression of bounded exogenous disturbances: A linear dynamic output controller

In the paper, we study a problem of constructing a linear dynamic output controller for suppressing bounded exogenous perturbations in a linear control system. We propose an approach based on a method of invariant ellipsoids and technique of linear matrix inequalities. A control of gyroplatform and two-mass system is given as an example.